18436
OCTOBER 2015
http://www.fujielectric.com/products/semiconductor/
FMW15N60S1HF FUJI POWER MOSFET
Super J-MOS series N-Channel enhancement mode power MOSFET
Features
Pb-free lead terminal
RoHS compliant
uses Halogen-free molding compound
Applications
For switching
Outline Drawings [mm]
Equivalent circuit schematic
①
Gate
②Drain
③Source
①②③
CONNECTION
①GATE
②DRAIN
③SOURCE
DIMENSIONS ARE IN MILLIMETERS.
① ② ③
① ② ③
TO-247
Absolute Maximum Ratings at TC=25°C (unless otherwise specied)
Parameter Symbol Characteristics Unit Remarks
Drain-Source Voltage VDS 600 V
VDSX 600 V VGS=-30V
Continuous Drain Current ID
±15 A Tc=25°C Note*1
±9.5 A Tc=100°C Note*1
Pulsed Drain Current IDP ±45 A Note *1
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive
Maximum Avalanche Current IAR 3.7 A Note *2
Non-Repetitive
Maximum Avalanche Energy EAS 506.5 mJ Note *3
Maximum Drain-Source dV/dt dVDS /dt 50 kV/μs VDS≤ 600V
Peak Diode Recovery dV/dt dV/dt 15 kV/μs Note *4
Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5
Maximum Power Dissipation PD
2.5 WTa=25°C
115 TC=25°C
Operating and Storage Temperature range Tch 150 °C
Tstg -55 to +150 °C
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=2.3A, L=176mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDS peak≤600V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDS peak≤600V, Tch≤150°C.
Electrical Characteristics at TC=25°C (unless otherwise specied)
• Static Ratings
Parameter Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS ID=250μA
VGS=0V 600 - - V
Gate Threshold Voltage VGS(th) ID=250μA
VDS=VGS 2.5 3.0 3.5 V
Zero Gate Voltage Drain Current IDSS
VDS=600V
VGS=0V Tch=25°C - - 25
μA
VDS=480V
VGS=0V Tch=125°C - - 250
Gate-Source Leakage Current IGSS VGS= ± 30V
VDS=0V - 10 100 nA
Drain-Source On-State Resistance RDS(on) ID=7.5A
VGS=10V - 0.195 0.23 Ω
Gate resistance RGf=1MHz, open drain - 3.4 - Ω
2
FMW15N60S1HF
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3
FUJI POWER MOSFET
• Dynamic Ratings
Parameter Symbol Conditions min. typ. max. Unit
Forward Transconductance gfs ID=7.5A
VDS=25V 7.3 14.7 - S
Input Capacitance Ciss VDS=400V
VGS=0V
f=250kHz
- 1050 -
pF
Output Capacitance Coss - 34 -
Reverse Transfer Capacitance Crss - 3.2 -
Effective output capacitance,
energy related (Note *6) Co(er) VGS=0V
VDS=0…480V - 77 -
Effective output capacitance,
time related (Note *7) Co(tr)
VGS=0V
VDS=0…480V
ID=constant
- 256 -
Turn-On Time td(on)
VDD=400V, VGS=10V
ID=7.5A, RG=24Ω
See Fig.3 and Fig.4
- 32 -
ns
tr- 13.5 -
Turn-Off Time td(off) - 124 -
tf- 17.5 -
Total Gate Charge QG
VDD=480V, ID=15A
VGS=10V
See Fig.5
- 43 -
nC
Gate-Source Charge QGS - 11.5 -
Gate-Drain Charge QGD - 13.5 -
Drain-Source crossover Charge QSW -7-
• Reverse Diode
Parameter Symbol Conditions min. typ. max. Unit
Avalanche Capability IAV L=42.2mH, Tch=25°C
See Fig.1 and Fig.2 3.7 - - A
Diode Forward On-Voltage VSD IF=15A, VGS=0V
Tch=25°C - 0.9 1.35 V
Reverse Recovery Time trr
IF=15A, VDD=400V
-di/dt=100A/μs
Tch=25°C
See Fig.6 and Fig.7
345 - ns
Reverse Recovery Charge Qrr - 5 - μC
Peak Reverse Recovery Current Irp - 29 - A
Thermal Resistance
Parameter Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) - - 1.09 °C/W
Channel to Ambient Rth(ch-a) - - 50 °C/W
Note *6 : Co(er) is a xed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.
Note *7 : Co(tr) is a xed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.
2
3
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
FMW15N60S1HF
0 25 50 75 100 125 150
0
50
100
150
Allowable Power Dissipation
P
D
=f(Tc)
P
D
[W]
T
C
[
°
C]
1 10 100 1000
0.01
0.1
1
10
100
t
P
D
Power loss waveform :
Square waveform
t
P
D
t
P
D
Power loss waveform :
Square waveform
I
D
[A]
V
DS
[V]
Safe Operating Area
I
D
=f(V
DS
): Duty=0(Single pulse), Tc=25
°
C
t=
1µs
10µs
1ms
100µs
0 5 10 15 20 25
0
10
20
30
40
50
8V
6.5V
5.5V
7V
20V
10V
6V
I
D
[A]
V
DS
[V]
Typical Output Characteristics
I
D
=f(V
DS
): 80
µ
s pulse test, T
ch
=25
°
C
V
GS
=5V
0 5 10 15 20 25
0
10
20
30
8V
V
GS
=4.5V
5.5V
20V
10V
6V
I
D
[A]
V
DS
[V]
Typical Output Characteristics
I
D
=f(V
DS
): 80
µ
s pulse test, T
ch
=150
°
C
5V
0 10 20 30 40 50
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65 5.5V
5V
10V
6.5V
6V
7V
R
DS(on)
[Ω]
I
D
[A]
Typical Drain-Source on-state Resistance
R
DS(on)
=f(I
D
): 80
µ
s pulse test, T
ch
=25
°
C
8V
V
GS
=20V
0 10 20 30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4.5V 5.5V
5V
10V
6V
R
DS(on)
[Ω]
I
D
[A]
Typical Drain-Source on-state Resistance
R
DS(on)
=f(I
D
): 80
µ
s pulse test, T
ch
=150°C
8V
V
GS
=20V
4
FMW15N60S1HF
http://www.fujielectric.com/products/semiconductor/
5
FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
500
520
540
560
580
600
620
640
660
680
700
This curve is not a guaranteed performance and is a reference value.
B
VDSS
[V]
T
ch
[
°
C]
Drain-Source Breakdown Voltage
B
VDSS
=f(T
ch
): I
D
=10mA, V
GS
=0V
-50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
R
DS(on)
[Ω]
T
ch
[
°
C]
typ.
max.
Drain-Source On-state Resistance
R
DS(on)
=f(T
ch
): I
D
=7.5A, V
GS
=10V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
typ.
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
): V
DS
=V
GS
, I
D
=250
µ
A
V
GS(th)
[V]
T
ch
[
°
C]
0 1 2 3 4 5 6 7 8 9 10
0.1
1
10
100
T
ch
=25℃
150℃
I
D
[A]
V
GS
[V]
Typical Transfer Characteristic
I
D
=f(V
GS
): 80
µ
s pulse test, V
DS
=25V
0.1 1 10 100
0.1
1
10
100
150℃
T
ch
=25℃
g
fs
[S]
I
D
[A]
Typical Transconductance
g
fs
=f(I
D
): 80µs pulse test, V
DS
=25V
0.0 0.5 1.0 1.5 2.0
0.1
1
10
100
T
ch
=25℃
150℃
I
F
[A]
V
SD
[V]
Typical Forward Characteristics of Reverse Diode
I
F
=f(V
SD
): 80µs pulse test
4
5
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
FMW15N60S1HF
0.1 1 10 100
1
10
100
1000
10000
100000
C [pF]
V
DS
[V]
I
D
[A]
Typical Capacitance
C=f(V
DS
): V
GS
=0V, f=250kHz
Crss
Coss
Ciss
0 100 200 300 400 500 600
0
2
4
6
8
10
12
Typical Coss stored energy
Eoss [uJ]
V
DS
[V]
0.1 1 10 100
1
10
100
1000
Typical Switching Characteristics vs. ID T
ch
=25
°C
t=f(I
D
): Vdd=400V, V
GS
=10V/0V, R
G
=24Ω
td(on)
tr
tf
td(off)
t [ns]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
300V
120V
Typical Gate Charge Characteristics
V
GS
=f(Q
g
): I
D
=15A, T
ch
=25
°
C
Q
g
[nC]
Vdd=480V
V
GS
[V]
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
Transient Thermal Impedance
Z
th(ch-c)
=f(t):D=0
Z
th(ch-c)
[℃/W]
t [sec]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
900
1000
I
AS
=3.7A
I
AS
=2.3A
I
AS
=1.2A
E
AV
[mJ]
starting T
ch
[
°
C]
Maximum Avalanche Energy vs. startingTch
E
(AV)
=f(starting T
ch
): Vcc=60V, I
(AV)
<=3.7A
6
FMW15N60S1HF
http://www.fujielectric.com/products/semiconductor/
7
FUJI POWER MOSFET
Fig.1 Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test
Fig.3 Switching Test circuit Fig.4 Operating waveform of Switching Test
Fig.5 Operating waveform of Gate charge Test
Fig.7 Operating waveform of Reverse recovery Test
VGS
VDS
QG
QGS QGD
VGS,VDS
Qg
QSW
10V
IAV
BVDSS
VDS
ID
VGS
0
+10V
-15V
Rg
L
D.U.T.
VDD
Fig.6 Reverse recovery Test circuit
VGS
VDS
VDS × 90%
td(on) tr td(off) tf
VGS × 10%
VGS × 90%
VDS × 10%
VDS × 90%
VDS × 10%
L
VDD
RG
PG
D.U.T
Same as
D.U.T.
IF
trr
Irp
Irp× 10%
VDS peak
VDS
Diode L
VDD
RG
PG
D.U.T.
trr
Qrr=∫ ir・dt
0
6
7
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
FMW15N60S1HF
P2
Manufacturer
Code No.
Logo Type
YMNNN
Type Name
Lot No.
Symbol Mark of
"Lead-Free"
Y : Last digit of year
M : Month code 1~9 and O,N,D
NNN : Lot serial number
* The font (font type,size) and the logo type size
might be actually different.
hf
hf : Halogen-free mark
CONNECTION
①GATE
②DRAIN
③SOURCE
DIMENSIONS ARE IN MILLIMETERS.
15N60S1
① ② ③
① ② ③
Outview: TO-247 Package
Marking
8
FMW15N60S1HF
http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
WARNING
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The contents are subject to change without notice for specication changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specications.
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