11/2008
AWT6277R
HELPTM IMT/WCDMA 3.4 V/28.5 dBm
Linear Power Amplier Module
Data Sheet - Rev 2.1
M20 Package
10 Pin 4 mm x 4 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
different output power levels, and a shutdown mode
with low leakage current, increase handset talk and
standby time. The self-contained 4 mm x 4 mm x 1
mm surface mount package incorporates matching
networks optimized for output power, efciency, and
linearity in a 50 Ω system.
FEATURES
• InGaP HBT Technology
• High Efciency:
44% @ POUT = +28.5 dBm
21% @ POUT = +16 dBm
16% @ POUT = +7 dBm
• Low Quiescent Current: 15 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• V
REF = +2.85 V (+2.75 V min over temp)
• Optimized for a 50 Ω System
• Low Prole Miniature Surface Mount Package
• RoHS Compliant Package Option, 250 oC MSL-3
• HSPA Compliant (no backoff)
APPLICATIONS
• WCDMA/HSPA IMT-Band Wireless Handsets and
Data Devices
PRODUCT DESCRIPTION
The AWT6277 meets the increasing demands for
higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement
for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efciency for
Bias Control
VCC
VREF
RFIN
RFOUT
GND
VMODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
VCC
GND
GND