MITSUBISHI IGBT MODULES CM50DY-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C F K Q - DIA. (2 TYP.) E2 G2 F M J C2E1 E2 N C1 G1 E1 D R S - M5 THD (3 TYP.) (3 TYP.) R R H TAB#110 t=0.5 H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 3.1500.01 C 1.57 Dimensions Inches Millimeters K 0.67 17.0 80.00.25 L 0.63 16.0 40.0 M 0.51 13.0 D 1.34 34.0 N 0.47 12.0 E 1.22 Max. 31.0 Max. P 0.28 7.0 F 0.90 23.0 Q 0.256 Dia. Dia. 6.5 G 0.85 21.5 R 0.16 4.0 H 0.79 20.0 S M5 Metric M5 J 0.71 18.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50DY-24H is a 1200V (VCES), 50 Ampere Dual IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 50 24 Sep.2000 MITSUBISHI IGBT MODULES CM50DY-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (TC = 25C, Tj 150C) Pc 400 Watts Mounting Torque, M5 Main Terminal - 1.47 ~ 1.96 N*m Mounting Torque, M6 Mounting - 1.96 ~ 2.94 N*m - 190 Grams Viso 2500 Vrms Collector Current (TC = 25C) Peak Collector Current Emitter Current** (TC = 25C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 1.0 mA - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V - 2.5 3.4** Volts IC = 50A, VGE = 15V, Tj = 150C - 2.25 - Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V - 250 - nC Emitter-Collector Voltage VEC IE = 50A, VGE = 0V - - 3.5 Volts Test Conditions Min. Typ. Max. Units - - 10 VGE = 0V, VCE = 10V - - ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes nF 3.5 nF Reverse Transfer Capacitance Cres - - 2 nF Resistive Turn-on Delay Time td(on) - - 80 ns Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 600V, IC = 50A, - - 200 ns td(off) VGE1 = VGE2 = 15V, RG = 6.3 - - 150 ns - - 350 ns Diode Reverse Recovery Time trr tf IE = 50A, diE/dt = -100A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = -100A/s - 0.37 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.31 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.70 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.075 C/W Sep.2000 MITSUBISHI IGBT MODULES CM50DY-24H MEDIUM POWER SWITCHING USE INSULATED TYPE 100 15 80 5 12 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 11 60 10 40 9 20 7 VCE = 10V Tj = 25C Tj = 125C 80 60 40 20 8 0 0 2 4 6 8 0 10 4 8 12 16 10 EMITTER CURRENT, IE, (AMPERES) 4 2 IC = 20A 4 8 12 16 102 7 5 3 2 101 7 5 1.5 2.0 2.5 3.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) SWITCHING TIME, (ns) td(on) VCC = 600V VGE = 15V RG = 6.3 Tj = 125C tr 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 Cies Coes 100 t rr 100 di/dt = -100A/sec Tj = 25C 101 100 101 EMITTER CURRENT, IE, (AMPERES) Cres 100 101 102 GATE CHARGE, VGE 101 Irr 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) tf 102 80 101 10-1 10-1 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 60 VGE = 0V 1.0 20 40 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) td(off) 20 CAPACITANCE VS. VCE (TYPICAL) Tj = 25C 3 0 0 1 COLLECTOR-CURRENT, IC, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 2 IC = 50A 2 0 3 Tj = 25C 6 3 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) IC = 100A 4 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 8 VGE = 15V Tj = 25C Tj = 125C 0 20 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 50A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM50DY-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.31C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) MEDIUM POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.7C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000