Sep.2000
B
FF
C
K
R
R
R
D
A
EG
N
H
H
J
P
M
C1
E1
(3 TYP.)
(2 TYP.)
(3 TYP.)
E2C2E1
E2G1 G2
S - M5 THD
Q - DIA.
L
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.57 40.0
D 1.34 34.0
E 1.22 Max. 31.0 Max.
F 0.90 23.0
G 0.85 21.5
H 0.79 20.0
J 0.71 18.0
Dimensions Inches Millimeters
K 0.67 17.0
L 0.63 16.0
M 0.51 13.0
N 0.47 12.0
P 0.28 7.0
Q 0.256 Dia. Dia. 6.5
R 0.16 4.0
S M5 Metric M5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
er y free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offer ing simplified system as-
sembly and thermal management.
Features:
uLow Drive Power
uLow VCE(sat)
uDiscrete Super-Fast Recovery
Free-Wheel Diode
uHigh Frequency Operation
uIsolated Baseplate for Easy
Heat Sinking
Applications:
uAC Motor Control
uMotion/Ser vo Control
uUPS
uWelding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50DY-24H
is a 1200V (VCES), 50 Ampere
Dual IGBT Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 50 24
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULA TED TYPE
Outline Drawing and Circuit Diagram
Sep.2000
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol Ratings Units
Junction Temperature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC50 Amperes
Peak Collector Current ICM 100* Amperes
Emitter Current** (TC = 25°C) IE50 Amperes
Peak Emitter Current** IEM 100* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc400 Watts
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 190 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V – 2.5 3.4** Volts
IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QGVCC = 600V, IC = 50A, VGE = 15V – 250 – nC
Emitter-Collector Voltage VEC IE = 50A, VGE = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies –– 10nF
Output Capacitance Coes VGE = 0V, VCE = 10V – – 3.5 nF
Re verse Transf er Capacitance Cres – – 2 nF
Resistive Turn-on Delay Time td(on) – – 80 ns
Load Rise Time trVCC = 600V, IC = 50A, – – 200 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω– – 150 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 50A, diE/dt = –100A/µs – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = –100A/µs – 0.37 – µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.31 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.70 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULA TED TYPE
Sep.2000
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULA TED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
60
20
0
V
GE
= 20V
15 12
11
8
7
T
j
= 25
o
C
40
80
100
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
80
60
40
20
0
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
100
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
020406080
4
3
2
1
0100
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 6.3Ω
T
j
= 125°C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -100A/µsec
T
j
= 25°C
10
1
10
0
10
-1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 100 200
16
12
8
4
0300 400
V
CC
= 600V
V
CC
= 400V
I
C
= 50A
10
2
7
5
3
2
1.0 1.5 2.0
10
1
7
5
3
2.5 3.0 3.5
3
2
T
j
= 25°C
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C
= 20A
I
C
= 100A
I
C
= 50A
Sep.2000
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULA TED TYPE
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.31°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5 10-4 10-3
100
10-1
10-2
10-3
10-3 10-2 10-1 100101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.7°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10-1
10-2
10-3
