SYASEMI SEMICONDUCTOR RBV5000 - RBV5010 PRV : 50 - 1000 Volts lo : 50 Amperes FEATU RES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 Voc * |deal for printed circuit board * Very good heat dissipation MECHANICAL DATA: * Case: Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position: Any * Weight: 7.7 grams SILICON BRIDGE RECTIFIERS i a 2040.3 RBV25 i wo o + > wo | 13.5403 Talat! Te fb #6 40.2 40.2 oe o +H a an 3.94 0.2$>| 49+ 0.2 > | 8 3201 4.0 +0.4 200.2 OF +04 17540.5 ii ae Dimensions in millimeters tf MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RBV RBY RBYV RBY REV REV RBV RATING ere 5000 | 5004 5002 | 5004 | 5006 | 5008 | 5010 MALT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 soo | 71000 Vv Maximum RMS Voltage Vrs 35 70 140 280 420 560 700 Maximum DC Blocking Voltage Vobe 50 100 200 400 600 800 | 1000 Maximum Average Forward Current Tc = 55C IF 50 A Peak Forward Surge Current Single half sine wave lFsn 400 A Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. It 660 ACS Maximum Forward Voltage per Diode atIF = 25 A VF 14 Vv Maximum DC Reverse Current Ta =25 C IR 10 pA at Rated DC Blocking Voltage Ta= 100C IRtH) 200 pA Typical Thermal Resistance (Note 1} ROJIC 1.6 CAN Operating Junction Temperature Range Ta 10 C Storage Temperature Range Tst -40 to + 150 C Notes : 1. Thermal Resistance fram junctionto case with units mounted on heatsink. Page 1 of 2 SYNSEMI! SEMICONDUCTOR FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES FL. Board Mounted with SINE WAVE R-Load o 2h 60 7H 1000 125180175 CASE TEMPERATURE, { C} PER DIODE Pulse Width = 300 ps 1% Duty Cycle Ti = 26C FORWARD CURRENT, AMPERES 1 04 06 O8 10 12 14 16 18 FORWARD VOLTAGE, VOLTS FIG.3 - TYPICAL FORWARD CHARACTERISTICS RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 ) PEAK FORWARD SURGE CURRENT, REVERSE CURRENT, FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AMPERES 6.3 ms SINGLE HALF SINE WAVE JEDEG METHOD 1 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE Tl = 100C of MICROAMPERES oN a 20 40 60 a0 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (6) Page 2 of 2