ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary V(BR)DSS RDS(ON) 30V 0.12 @ VGS = 10V Features ID TA = +25C 2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications DC-DC Converters Power Management Functions Motor Control Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe) Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D D G S G Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Part Number ZXMN3A01FTA ZXMN3A01FTC Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 7N3 ZXMN3A01F Document number: DS33528 Rev.4 - 2 7N3 = Product Type Marking Code 1 of 7 www.diodes.com January 2015 (c) Diodes Incorporated ZXMN3A01F Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage ADVANCED INFORMATION Continuous Drain Current, VGS = 10V (Note 6) (Note 6) (Note 5) Symbol VDSS VGSS Value 30 20 Units V V ID 2.0 1.6 1.8 A IDM IS 8 1.3 A A TA = +25C TA = +70C TA = +25C Pulsed Drain Current (Note 7) Maximum Body Diode Continuous Current (Note 6) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Total Power Dissipation Linear Derating Factor Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Symbol (Note 5) PD (Note 6) PD (Note 5) (Note 6) RJA Operating and Storage Temperature Range Notes: TJ, TSTG Value 625 5 806 6.4 200 155 -55 to +150 Units mW mW/C mW mW/C C/W C 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t5 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ZXMN3A01F Document number: DS33528 Rev.4 - 2 2 of 7 www.diodes.com January 2015 (c) Diodes Incorporated ZXMN3A01F ADVANCED INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) Static Drain-Source On-Resistance (Note 8) RDS(ON) Forward Transconductance Diode Forward Voltage (Note 8 & 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Reverse Recovery Time Reverse Recovery Charge gFS VSD 1 0.11 3.5 0.85 2.5 0.12 0.18 0.95 V S V VDS = VGS, ID = 250A VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2A VDS = 4.5V, ID = 2.5A VGS = 0V, IS = 1.7A, TJ = +25C Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 190 38 20 2.3 3.9 0.6 0.9 1.7 2.3 6.6 2.9 17.7 13 pF VDS = 25V, VGS = 0V, f = 1MHz Notes: Test Condition VDS = 15V, VGS = 5V, ID = 2.5A nC VDS = 15V, VGS = 10V, ID = 2.5A ns VDD = 15V , ID = 2.5A, RG = 6, VGS = 10V ns nC TJ = +25C, IF = 2.5A, di/dt= 100A/s 8. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. Guaranteed by design. Not subject to production testing. ZXMN3A01F Document number: DS33528 Rev.4 - 2 3 of 7 www.diodes.com January 2015 (c) Diodes Incorporated ADVANCED INFORMATION ZXMN3A01F ZXMN3A01F Document number: DS33528 Rev.4 - 2 4 of 7 www.diodes.com January 2015 (c) Diodes Incorporated ADVANCED INFORMATION ZXMN3A01F ZXMN3A01F Document number: DS33528 Rev.4 - 2 5 of 7 www.diodes.com January 2015 (c) Diodes Incorporated ZXMN3A01F Package Outline Dimensions ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8 All Dimensions in mm G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZXMN3A01F Document number: DS33528 Rev.4 - 2 Dimensions Z X Y C E Value (in mm) 2.9 0.8 0.9 2.0 1.35 E 6 of 7 www.diodes.com January 2015 (c) Diodes Incorporated ZXMN3A01F IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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