Half-pitch 4-ch Transistor Photocouplers (Reference) Toshiba Corporation Semiconductor Company Optoelectronics Device Marketing & Engineering Group 1 Copyright 2010, Toshiba Corporation. (HOC-1191) Transistor Photocouplers Half-pitch, 4-ch Comparison between new product and existing product Reference Construction Comparison TLP290-4 / TLP291-4 ((New product)) Characteristic (Transmissive type in double-molded packages) TLP280-4 / TLP281-4 ((Existing g product)) (Reflective type in single-molded packages) Internal construction 4.55 +0.25,-0.15 Overall dimensions mm) 4.4 0.25 7.0 0.4 Creepage/clearance distance (mm) Isolation thickness (mm) (HOC-1297) 2.1 (max) 2.3 (max) 7.0 0.4 5.0 (min) 4.0 (min) 0.4 (min) 0.4 (min) TOSHIBA CORPORATION Semiconductor Company 2011/04/01 2 Comparison of Package Dimensions Reference <Product dimensions> Please confirm that no problems pertaining to the height and width of the product will occur before usage. Taller than TLP281-4 2.3mm(MAX) 2.1mm(MAX) Same lead width between LED and detector sides despite increase in package width. width Same land pattern. (HOC-1297) TOSHIBA CORPORATION Semiconductor Company 2011/04/01 3 Comparison of Absolute Maximum Ratings Reference Increase in guaranteed operating temperature range: 100MAX110MAX.. 100MAX110MAX Absolute Maximum RatingsTa=25 Characteristics Symbol Unit TLP281-4 TLP291-4* Forwardd currentt F Pulse forward current (Note 1) Reverse voltage Collector-emitter voltage Emitter-collector Emitter collector voltage Collector current Output power dissipation Output power dissipation derating (Ta 25) Operating temperature range Storage temperature range Lead solder temperature Total package power dissipation per ch Total package power dissipation (Ta 25)per ch Isolation voltage (Note 2 IF IFP VR VCEO VECO Ic Pc mA A A V V V mA mW 50 1 5 80 7 50 100 50 1 5 80 7 50 100 Pc/ mW/ -1 -1 Topr Tstg Tsol -55 to 100 -55 to 125 260(10s) -55 to 1 1 0 -55 to 125 260(10s) PT mW 170 170 PT/ mW/ -1.7 -1.7 BV Vrms 2500 2500 New product Note 1: Pulse width 100 s, frequency = 100Hz Note 2: AC, 1 min, R.H.60%LED pins and detector pins are shorted respectively. (HOC-1297) TOSHIBA CORPORATION Semiconductor Company 2011/04/01 4 Comparison of Main Characteristics Reference Electrical characteristics (Ta=25) Characteristic Symbol TLP291-4* TLP281-4 Unit Test conditions Min Typ Max Min Typ Max TOSHIBA : IF=10mA, Renesas : IF=5mA Forward current VF V 1 1.15 1.3 1.1 1.2 1.4 Reverse current IR A 10 10 Collector dark current ICEO A 0.01 0.1 0.01 0.1 Current transfer ratio (CTR) IC/IF 50 600 50 IC/IF(sat) - 60 - 60 - C ll t Collector-emitter itt saturation t ti voltage lt VCE( t) VCE(sat) V - 02 0.2 - 04 0.4 TOSHIBA : IC=2.4mA,, IF=8mA Renesas : IC=2mA, IF=10mA A - - 10 - - 10 VF=0.7V, VCE=48V Saturated CTR Off-state collector current Ic(off) 400 VR=5V TOSHIBA : VCE=48V, Renesas : VCE=80V IF=5mA, VCE=5V IF=1mA, VCE=0.4V New product (HOC-1297) TOSHIBA CORPORATION Semiconductor Company 2011/04/01 5