1SV282
2016-12-13
1
TOSHIBA Variable Cap aci t ance Diode Silicon Epitaxial Planar Type
1SV282
CATV Tuning
High capacitance ratio: C2 V/C25 V = 12.5 (typ.)
Low series resistance: rs = 0.6 Ω (typ.)
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Reverse voltage VR 34 V
Peak reverse voltage VRM 36 (RL = 10 kΩ) V
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating tem perat ur e/ curr e nt/ v olt age, etc.) are within the
absolute maxi m um ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and ind iv idu al
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage VR
IR = 1 μA 34 V
Reverse current IR VR = 32 V 10 nA
Capacitance(Note 1) C2
V VR = 2 V, f = 1 MHz 33 35.5 38 pF
Capacitance(Note 1) C25 V VR = 25 V, f = 1 MHz 2.6 2.85 3.0
Capacitance ratio C2 V/C25 V 12.0 12.5
Capacitance ratio C25 V/C28 V 1.03
Series resistance rs VR = 5 V, f = 470 MHz 0.6 0.8 Ω
Note 1: Available in matched group for capacitance to 2%.
For devices with the ordering number 1SV282(TPH2,F).
(min)C (min)C(max) C
<
=
0.02
(VR = 2 to 25 V)
Marking
Unit
: mm
JEDEC
JEITA
TOSHIBA 1-1G1A
Weight: 0.0014 g (typ.)
1998-08
1SV282
2016-12-13
2
Note:
100
(25)C(25)C(Ta)C
C×
=δ
(%)
1SV282
2016-12-13
3
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