AbsoluteMaximumRatings(Ta=25℃
(*)Vcc=5V
parameter specification
unit
symbol
Vcc
Iout
Topr
Tstg
0.3 6
±1.2(*)
40 100
40 125
V
mA
℃
℃
Supplyvoltage
outputcurrent
operating ambient
temperature
Storage ambient
temperature
●FunctionalBlockDiagram ●ApplicationCircuit
1:VCC
3:OUT
2:GND
HallElement Amplifier
Shippedinpacket-tapereel(5000pcs/Reel)
HybridLinearHallEffectIcsEQ-series
EQ-431LiscomposedofanInAsQuantumWellHallElementandasignalprocessingICchipinapackage
Notice:Itisrequestedtoreadandaccept"IMPORTANTNOTICE"writtenonthebackofthefrontcoverofthiscatalogue.
EQ-431L
●OperationalCharacteristics ●Pinandfunctions
●Features
Vout
Vcc
VsatH
VoutO
VsatL
Magneticfluxdensity
S0N
S
N
Marking
3OUT
2GND
1VCC
31
¡Analogoutputwhichproportionaltothemagneticfieldstrengthandpole.
¡Magneticsensitivity65mV/mT(typ.)
¡Supplyvoltagefrom3.0Vto5.5Vatsinglepowersupply
¡Operatingtemperaturerange-40100
¡Ratio-metricanalogoutput
¡3pinsurfacemountplasticpackage
¡Quickresponse3μs
 (whentherise-uptimeofmagneticfieldisratherthan1μs)
¡Lowoutputnoisevoltage5mVp-p
2
(TopView)
31
(TopView)
OUT VCC
0.1μF 5V
PleaseaddLPFifrequired.
GND
Pin No.
1
2
3
Pinname
VCC
GND
OUT
Function
Powersupply
Ground
Output
Recommendoperatingconditions
VCC
IOUT
CL
3.0
−1.0
5.0 5.5
1.0
1000
V
mA
pF
Supplyvoltage
outputcurrent
output load
parameter min
typ max unit
symbol
EQ-431L
●Electriccharacteristics(TA=25,VCC=5V
●Magneticcharacteristics(TA=25,VCC=5V
※1mT=10Gauss
※1mT=10Gauss
Parameter
Conditions min Unit
Symbol
VCC0.3
0
9
90
3
4
0.3
5
12
VCC
0.3
mA
V
V
kHz
μs
μs
μs
mVp-p
Typ Max
OutputsaturationvoltageatLowLevel
(*1)
Bandwidth
(*2)
Response time(*2)
Output rise time(*2)
Output fall time(*2)
Output noise voltage
(*2)
B=0mTwithnoload
IOUT1mA
IOUT=1mA
3dB CL=1000pF
ICC
VSATH
VSATL
fT
tRES
tRISE
tFALL
tREAC
VNp-p
OutputsaturationvoltageatHighLevel
(*1)
Current consumption
(*1&2)Designtargetat25
(*3)SeeCharacteristicDefinitionssection
(*4)SeeCharacteristicDefinitionssection
Risetime:10%ofInputMFDto90%ofoutputvoltage.
Falltime:90%ofInputMFDto10%ofoutputvoltage.
(underinput/outputMFDstepis1to2μs)
CL=1000pF
Output delay time(*2)
Risetime:10%ofInputMFDto10%ofoutputvoltage.
Falltime:90%ofInputMFDto90%ofoutputvoltage.
(underinput/outputMFDstepis1to2μs)
CL=1000pF
10%to90%ofoutputvoltageunder
input/outputMFDstepis1to2μs.
CL=1000pF
90%to10%ofoutputvoltageunder
input/outputMFDstepis1to2μs
CL=1000pF
●Ratio-metriccharacteristics(TA=25
※1mT=10Gauss
(*5)SeeCharacteristicDefinitionssection
Parameter
Symbol
Conditions min Typ Max Unit
Sensitivity(*3)
Quiescent voltage
Linearity(*4)
Vh
VOUT0
ρ
B=0±22mTwithnoload
B=0mT
B=0mT(IOUT=0mA)
B=±27mT(IOUT±1mA)
55
2.35
−0.5
65
2.5
75
2.65
0.5
mV/mT
V
%F.S.
Parameter
Symbol
Conditions min Typ Max Unit
ErrorinRatiometricof
Magneticsensitivity
(*5)
ErrorinRatiometricof
Quiescentvoltage
(*5)
V
OUT0-R
Vh-R B=0±22mTwithnoload
B=0mT
−3
−3
3
3
%
%
Inputmagneticfield
Risetimeofmagneticfield Falltimeofmagneticfield
tRES
tREA tREA tFALL
tRES
tRISE
Outputvoltage
ofsensor
90% 90%
10%
90%
1〜2μs 1〜2μs
10%
90%
10%
10%
●CharacteristicDefinitions
ρ=            ×100
Vout(+B)ーVout(ーB
Vout(B){Vh×B+Vint
①MagneticsensitivityVh(mV/mT)
Magneticsensitivityisdefinedastheslopeofthestraightline
obtained from three points, Quiescent voltage VOUT0VOUT
(+B)VOUT(−B)(B isdescribed inmeasurementcondition),
bytheleastsquareapproximation.
②Linearityρ(%F.S.)
Linearity is defined as the ratio of a error voltage against
FULLSCALE. Where error voltage is calculate as the
difference from the straight line obtained from three points,
Quiescent voltage VOUT0VOUT(B)VOUT (B) (B and
Output current are described in measurement condition
shownbelow),bytheleastsquareapproximation.
〈Condition〉0mTapplied、IOUT=0mA
+BmTapplied:IOUT=+1.0mA(Drawoutfromoutput)
BmTapplied:IOUT−1.0mA(Drawintooutput)
WhereFULLSCALE(F.S.)isdefiedasVOUT(+B)VOUT(−B),
Vint is y-intercepts of the line obtained in the Definition of
Magneticsensitivity.
③Error in Ratiometric of Magnetic sensitivity and Error in
Ratiometricofquiescentvoltage
Errorinratiometricisdefinedastheratioofthevariationof
sensitivityand quiescentvoltage at3Vand5Vas following
equations..
④Responsetime tRES(μs)
Response time is defined as the time from the 90% reach
pointofinputmagneticfieldriseuptothe90%reachpointof
outputvoltageriseup
⑤Outputrisetime,Outputfalltime tRISEtFALL(μs
 Outputriseuptimeisdefinedasthetimefromthe10%point
to the 90% point of output voltage under a pulse like
magneticfieldinputshownbelow.
Output fall down time is defined as the time from the 90%
point to the 10% point of output voltage under a pulse like
magneticfieldinputshownbelow.
⑥Outputdelaytime tREAC(μs
Outputdelaytimeisdefinedasthetimefromthe10%point
inrise up(90% pointin falldown) of inputmagnetic fieldto
the 10% point in rise up(90% point in fall down) of output
voltageunderapulselikemagneticfieldinputshownbelow..
〈Relations of the input Magnetic field and tREStRISEtFALL
tREAC
VhーR=       ×100
Vh(VCC=5V)5
3
5
3
Vh(VCC=3V)
−
VOUT0R=       ×100
VOUT0(VCC=5V)5
3
5
3
VOUT0(VCC=3V)
−
EQ-431L
●SupplyVoltage
(ForreferenceonlyTemperaturedependenceofVout0
(Forreferenceonly)LandPattern(Unit:mm)●Package(Unit:mm)
※Thesensorsenterislocatedwithintheφ0.3mmcircle.
●OperationalCharacteristics
●TemperaturedependenceofVH
SupplyVoltage〔V〕
AmbientTemperature〔℃〕
OffsetVoltage〔V〕
AmbientTemperature〔℃〕
Magnetic Sensitivity〔mV/mT〕
AmbientTemperature〔℃〕
OutputVoltage〔V〕
Magneticfluxdensity〔mT〕
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
•This product contains galium arsenide(GaAs).Handling and discarding precsutions required.
-40 -20 0 20 40 60 80 100 120
2
2.5
3
3.5
4
4.5
5
5.5
6
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 100 120
B=0mT
Vcc=5V
Vcc=4V
Vcc=3V
0.6
0.15
φ0.3
0.4 0.4
31
2
0.65
3OUT
2GND
1VCC
Sensorcenter
0.61
3.0±0.1
3.6±0.1
0.8±0.1
1.2±0.1
2.6±0.1
4.4±0.2
0〜0.1
1.30 1.30
4.00
1.00
0.90
1.00
0.70 0.70
0
20
40
60
80
-40 -20 0 20 40 60 80 100 120
Ta=25℃
Vcc=5V
Vcc=4V
Vcc=3V
-50 -40 -30 -20 -10 0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20 3010 40 50
Vcc=5V
Vcc=4V
Vcc=3V
IMPORTANT NOTICE
These products and thei r specifications are subject to change without notice.
When you consider any use or application of these products, please make
inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or
authorized distributors as to current status of the products.
Descriptions of external circuits, application circuits, sof tware and ot her related
information contained in this document are provided only to illustrate the
operation and application examples of the semiconductor products. You are
fully responsible for the incorporation of these external circuits, application
circuits, software and other related information in the design of your
equipments. AKM assumes no responsibility for any losses incurred by you or
third parties arising from th e use of these information herein. AKM assumes no
liability for infringement of any patent, intellectual property, or other rights in
the application or use of such information contained herein.
Any export of these products, or devices or systems containing them, may
require an export license or other official approval under the law and
regulations of the country of export pertaining to customs and tariffs, currency
exchange, or strategic materials.
AKM products are neither intended nor authorized for use as critical
componentsNote1) in any safety, life support, or other hazard related device or
systemNote2), and AKM assumes no responsibility for such use, except for the
use approved with the express written consent by Representative Director of
AKM. As used here:
Note1) A critical component is one whose failure to function or perform
may reasonably be expected to result, whether directly or indirectly, in the
loss of the safety or effectiveness of the device or system containing it,
and which must therefore meet very high standards of performance and
reliability.
Note2) A hazard related device or system is one designed or inten ded fo r
life support or maintenance of safety or for applications in medicine,
aerospace, nuclear energy, or other fields, in which its failure to function
or perform may reasonably be expected to result in loss of life or in
significant injury or damage to person or property.
It is the responsibility of the buyer or distributor of AKM products, who
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notify such third party in advance of the above content and conditions, and
the buyer or distributor agrees to assume any and all responsibility and
liability for and hold AKM harmless from any and all claims arising from the
use of said product in the absence of such notification.
August 18, 2011