Rugged Power MOSFETs File Number 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V lps(on) = 0.859 and 1.19 N-CHANNEL ENHANCEMENT MODE D Features: @ Single pulse avalanche energy rated SOA is power-dissipation limited 6 @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance 92C$-42658 TERMINAL DIAGRAM The IRF440R, IRF441R, IRF442R and IRF443R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified tevel of energy in the breakdown avalanche mode of operation. These are n-channel en- SOURCE hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AA steel . package. JEDEC TO-204AA TERMINAL DESIGNATION ORAIN (FLANGE } 92Cs- 37801 Absolute Maximum Ratings P. t IRF440R IRF441R IRF442R IRF443R Units Vos Drain - Source Voltage _ 500 450 500 450 Vv Vosr Drain - Gate Voltage (Res = 20 KO) @ 00 450 500 450 Vv lo @ Tc = 25C Continuous Drain Current 8.0 8.0 7.0 7.0 A Ip @ Te = 100C Continuous Drain Current 5.0 5.0 4.0 4.0 A lom Pulsed Drain Current @ 32 32 28 28 A Ves Gate - Source Voltage +20 Vv Po @ Tc = 25C Max. Power Dissipation 125 (See Fig. 14) Ww Linear Derating Factor 1.0 (See Fig. 14) W/C Eas Single Pulse Avalanche Energy Rating @ 510 mj To Storage Temperature Range 755 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-67Rugged Power MOSFETs IRF440R, IRF441R, IRF442R, IRF443R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Par t Type Min. Typ. Max. | Units Test Conditions BVoss_ Drain - Source Breakdown Voltage IRF440R = IRF442R | 500 _ _ Vv Ves = OV IRF441R = IRF443R | 450 _ _ Vv Ib = 250nA Vesim Gate Threshold Voltage ALL 2.0 = 4.0 Vv Vos = Ves, lo = 2500 A lass Gate-Source Leakage Forward ALL _ =~ 100 nA Ves = 20V Ioss Gate-Source Leakage Reverse ALL = = -100 nA Ves = -20V loss Zero Gate Voltage Drain Current _ = 250 HA Vos = Max. Rating, Ves = OV ALL = | 1000 | gA | Vos = Max. Rating x 0.8, Vas = OV, Tc = 125C loom On-State Drain Current @ IRF440R 8.0 _ _ A IRFA41R Vos > Ipiem X Rostom max, Vas = 10V IRF442R taraaaR| 7 | | 7 A Rostom Static Drain-Source On-State IRF440R _ 08 0.85 Q Resistance nen Ves = 10V, lp = 4.0A inFaagn| | 19 4 tt | 2 |_Qts Forward Transconductance @ ALL 40 6.5 S(@)_ | Vos > Ipiom X Rostonmax, lo = 4.0A Ciss Input Capacitance ALL = 1225 = pF Vos = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL 200 pF See Fig. 10 Cres Reverse Transfer Capacitance ALL = 85 = pF tatons Turn-On Delay Time ALL = 17 35 ns Vop = 200V, Ip = 4.0A, Zo = 4.70 t Rise Time ALL = 5 15 ns See Fig. 17 ; tatorn Turn-Off Delay Time ALL 42 90 ns (MOSFET switching times are essentially th Fall Time ALL _ 14 30 ns independent of operating temperature.) Q Total Gate Charge _ Ves = 10V, Ip = 10A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) ALL 42 60 nc See Fig. 18 for test circuit. (Gate charge is Qe Gate-Source Charge ALL _ 20 = nc essentially independent of operating To RAT eae? temperature.) Qoa Gate-Drain (Miller) Charge ALL = 22 - nc Lo Internal Drain inductance ALL _ 5.0 ~ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device source and gate pins inductances and center of die. to Ls internal Source Inductance ALL ~ 12.5 - nH Measured from the source pin, 6mm ts (0.25 in.) from header and source $ bonding pad. orcs: azeas Thermal Resistance ReJG Junction-to-Case ALL = _ 1.0 CAW RuCS Case-to-Sink ALL _ 0.1 C/W _| Mounting surface flat, smooth, and greased. RmJA Junction-to-Ambient ALL - 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF440R| __ _ 8.0 A Modified MOSFET symbol (Body Diode) IRF441R : showing the integral IRF442R reverse P-N junction rectifier. gS IRF443R | - [70 | A Isma Pulse Source Current IRF440R} _ 32 A G (Body Diode) IRF441R IRF442R oun IRF443R | ~ | % | A Vsp Diode Forward Voltage @ IRF440R - = = IRF44iR| 7 2.0 Vv Te = 25C, Is = 8.0A, Vas = OV neaace | | 19 | v_ | Te=25C, Is =7.0A, Vas = 0V te Reverse Recovery Time ALL al 1100 _ ns Ts = 150C, le = 8.0A, die/dt = 100A/us Qaa Reverse Recovered Charge ALL = 6.4 ow pec Ty = 150C, Ir = 8.0A, dle/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlied by bs + Lo. @ Ts = 25G to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%, @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). Von = 50V, starting Ty = 25C, L = 14 mH, Rgs = 500, Ipeak = 8A. See figures 15, 16.us PULSE Ip, DRAIN CURRENT {AMPERES} a 20 40 60 ao Vos, DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 80 us PULSE TEST (p, ORAIN CURRENT (AMPERES) 0 2 4 6 8 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics 5 z a B 2 <= oc; FE 10 35 Se 05 ee ee ay of gs Ze =z 01 za 2s oe 005 SINGLE Ed er = 0.02 2 0.01 ws = 2 5 4 2 5 100 10 10-3 {TRANSIENT 2 Rugged Power MOSFETs IRF440R, IRF441R, IRF442R, IRF443R Ig, DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) 10-2 2 us PULSE t 1 Vos > 'Dion) * 0 2 4 6 8 10 Vgs, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics OPERATION IN THIS AREA IS LIMITED BY Rosioni IRF440R, Te = 28C Ty= 150C MAX Rings 1.0 KW . SINGLE PULSE IRFAAIR, 3 . I iRF440R, 10 2 5 10 20 so 10200 Vos. DRAIN-TOSOURCE VOLTAGE (VOLTS) 500 Fig. 4 Maximum Safe Operating Area L beet} ~-- t2 - 1, DUTY FACTOR, D= + . 2. PER UNIT BASE = Rynyc = 1.0 DEG. CW 3. Ty - Te = Pom Zinelt). 5 19-1 2 5 1.0 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal {mpedance, Junction-to-Case Vs. Pulse DurationRugged Power MOSFETs IRF440R, IRF441R, IRF442R, IRF443R 16.0 us PULSE TEST 1 ' Vos > Ipton) x Rosion) max. dd a y a nm wo Qty FRANSCONDUCTANCE {SIEMENS} ow nm fon. REVERSE ORAIN CURRENT (AMPERES) 0 4 8 2 16 20 0 1 2 3 4 5 ip, DRAIN CURRENT (AMPERES) Vp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 ~- Typical Source-Drain Diode Forward Voltage 1.25 25 a x So a w o wo a (NORMALIZED) 6 cs =o a 2 in BVoss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Roston}. ORAIN-TO-SOURCE ON-STATE RESISTANCE {NORMALIZEO} 078 0 40 0 40 80 120 160 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (0C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Cigg = Cy + Cog, Cys SHORTED Crp * Cog : Coe C; t, Cag+ et 1600 om" tt Ti 6 pd Cus + Cog z Ss 18 . 2 1 = 4 Vog = 250V = 1200 < : 1 8 5 Vos * 400V 2 8 5 it g 3 10 2 3 ano 8 3 & = , = 10A 400 3 FOR TEST CIRCUIT > FIGUAE 18 0 & 10 1% 2 2% 30 3 40 80 0 20 40 Vg. DRAIN TO-SOURCE VOLTAGE (VOLTS) Q4, TOTAL GATE CHARGE inc} Fig. 10 = Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-70Rugged Power MOSFETs IRF440R, IRF441R, IRF442R, IRF443R Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us QURATION. INITIAL Ty = 25C. (HEATING a = S 39 Feeeect OF 2.0 us PULSE IS MINIMAL} 8 3 = Z 25 g e 4 f- Pr 2 Vgg = 10V Y e 2 Sf 25 tAFA40A, 441 B20 5 3 = 20V o = 4 3 2 3 18 24 << z 5 = 10 a & z 2 s S 05 cede -f 0 0 5 10 15 20 25 30 35 25 50 15 100 128 150 Ip, DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (C) Fig. 12 - Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature z & VARY tp TO OBTAIN pur REQUIRED PEAK i, vgg*10 It fre ry a 3 3 2 S 9203-42659 Fig. 15 Unciamped Energy Test Circuit 2 S Pp. POWER DISSIPATION (WATTS) & 2 3 6 20 40 60 80 100 120 146 Tc, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve 9208-42660 Fig. 16 Unclamped Energy Waveforms O +Vpg (ISOLATED CURRENT REGULATOR 200v SUPPLY) SAME TYPE AOJUST Ry TO OBTAIN $ gcc) 12V AS DUT SPECIFIED tg BATTERY 1. Vos Ves TT DUT. bur PULSE | GENERATOR 472 | 1.5 mA SOURCE o-_--__! _ IMPEDANCE ia 0 Vos _ CURRENT CURRENT SHUNT SHUNT = . 92GS-44103 Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 6-71