IRFHM9391TRPbF HEXFET(R) Power MOSFET VDSS RDS(on) max (@ VGS = -10V) (@ VGS = -4.5V) Qg (typical) ID (@TA = 25C) -30 V 14.6 m 22.5 32 nC -11 D 5 4 G D 6 3 S D 7 2 S D 8 1 S PQFN 3.3 x 3.3 mm A Applications System/load switch, Charge or discharge switch for battery protection Features Low Thermal Resistance to PCB (<3.8C/W) Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer Qualification Base part number Package Type IRFHM9391PbF PQFN 3.3mm x 3.3mm Benefits Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM9391TRPbF Absolute Maximum Ratings VGS ID @ TA = 25C ID @ TA= 70C IDM ID @ TC(Bottom) = 25C ID @ TC(Bottom) = 100C ID @ TC = 25C PD @TA = 25C PD @TC(Bottom) = 25C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Max. 25 -11 -9.0 -90 -38 -24 Units V A -24 2.6 33 0.021 -55 to + 150 W W/C C Notes through are on page 9 1 2016-2-23 IRFHM9391TRPbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- --- --- -1.3 --- --- --- --- --- 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.02 10 11.7 18 -1.8 -5.1 --- --- --- --- --- 16 32 3.0 1.4 8.0 19.6 9.4 9.0 16 11 27 72 60 1543 310 208 Max. --- --- --- 14.6 22.5 -2.4 --- -1.0 -150 -10 10 --- --- 48 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA VGS = -20V, ID = -11A m VGS = -10V, ID = -11A VGS = -4.5V, ID = -11A V V = VGS, ID = -25A mV/C DS VDS = -24V, VGS = 0V A VDS = -24V, VGS = 0V,TJ = 125C VGS = -25V A VGS = 25V S VDS = -10V, ID = -9.0A nC VGS = -4.5V, VDS =-15V, ID = -9.0A nC nC VDS = -15V VGS = -10V ID = -9.0A VDS = -16V, VGS = 0V ns VDD = -15V, VGS = -4.5V ID = -1.0A RG = 6.8 pF VGS = 0V VDS = -25V = 1.0KHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ. Max. Units --- 75 mJ Min. Typ. Max. --- --- -2.8 Units A --- --- -90 --- --- --- --- 64 25 -1.2 96 38 V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = -2.8A, VGS = 0V TJ = 25C, IF = -2.8A, VDD = -24V di/dt = 100A/s Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Typ. --- Max. 3.8 Units C/W --- 42 RJA Junction-to-Ambient --- 47 RJA (<10s) Junction-to-Ambient --- 32 2 2016-2-23 IRFHM9391TRPbF 1000 1000 -ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 -2.7V 1 60s PULSE WIDTH -ID, Drain-to-Source Current (A) VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V Tj = 150C VGS -10V -5.0V -4.5V -3.5V -3.3V -3.1V -2.9V -2.7V TOP 100 BOTTOM 10 -2.7V 60s PULSE WIDTH Tj = 25C 0.1 0.1 1 1 10 100 0.1 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 TJ = 150C 10 TJ = 25C 1 VDS = -15V 60s PULSE WIDTH ID = -11A VGS = -10V 1.4 1.2 1.0 0.8 0.6 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) -VGS, Gate-to-Source Voltage (V) 14 VGS = 0V, f = 1 KHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd -V GS, Gate-to-Source Voltage (V) ID= -9A C oss = C ds + C gd C, Capacitance (pF) 100 1.6 0.1 Ciss 1000 Coss Crss 100 12 VDS= -24V VDS= -15V VDS= -6V 10 8 6 4 2 0 1 10 100 -V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 10 Fig 2. Typical Output Characteristics 1000 -ID, Drain-to-Source Current(A) 1 -V DS, Drain-to-Source Voltage (V) 0 5 10 15 20 25 30 35 40 45 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2016-2-23 IRFHM9391TRPbF 1000 100 T J = 150C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) ID, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) 1000 T J = 25C 100 100sec 1msec 10 10msec 1 DC 0.1 VGS = 0V Tc = 25C Tj = 150C Single Pulse 0.01 1.0 0.4 0.6 0.8 1.0 0.1 1.2 1 -V SD, Source-to-Drain Voltage (V) 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 -V GS(th) , Gate threshold Voltage (V) 12 10 -ID, Drain Current (A) 10 VDS , Drain-to-Source Voltage (V) 8 6 4 2 2.0 1.5 ID = -25uA 1.0 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) TA , Ambient Temperature (C) Fig 10. Threshold Voltage Vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJA ) C/W 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-23 30 350 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFHM9391TRPbF ID = -11A 25 20 T J = 125C 15 10 T J = 25C 5 0 5 10 15 20 ID -3.2A -4.5A BOTTOM -9.0A 300 TOP 250 200 150 100 50 0 25 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) -V GS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On- Resistance vs. Gate Voltage Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125C and Tstart =25C (Single Pulse) 10 1 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 125C. 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 2016-2-23 IRFHM9391TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 17a. Switching Time Test Circuit I AS Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 Qgd Qgodr Fig 19. Gate Charge Waveform 2016-2-23 IRFHM9391TRPbF PQFN 3.3 x 3.3 Outline "C" Package Details 8 7 6 5 1 2 3 4 3 4 6 5 1 8 2 7 PQFN 3.3 x 3.3 Outline "G" Package Details 8 7 6 5 #1 2 3 4 #1 2 3 4 8 7 6 5 For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 7 2016-2-23 IRFHM9391TRPbF PQFN 3.3 x 3.3 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX ?YWW? XXXXX PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ PQFN 3.3 x 3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-23 IRFHM9391TRPbF Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant Consumer (per JEDEC JESD47F guidelines) MSL1 PQFN 3.3mm x 3.3mm (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Notes: Starting TJ = 25C, L = 1.872mH, RG = 50, IAS = -9A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited by source bonding technology. 9 2016-2-23 IRFHM9391TRPbF Revision History Date 7/1/2014 2/23/2016 Comments Remove "SAWN" package outline on page 7. Updated part marking on page 7. Updated tape and reel on page 8. Updated datasheet with corporate template Updated package outline to reflect the PCN # (241-PCN30-Public) for "Option C" and "Option G" on page 7. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2016-2-23