IRFHM9391TRPbF
HEXFET® Power MOSFET
Base part number Package Type Standard Pack
Form Quantity
IRFHM9391PbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 IRFHM9391TRPbF
Orderable Part Number
VDSS -30 V
RDS(on) max
(@ VGS = -10V) 14.6
(@ VGS = -4.5V) 22.5
Qg (typical) 32 nC
ID
(@TA = 25°C) -11 A
m
PQFN 3.3 x 3.3 mm
Features Benefits
Low Thermal Resistance to PCB (<3.8°C/W) Enable better Thermal Dissipation
Low Profile (<1.05 mm) results in Increased Power Density
Industry-Standard Pinout Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1,Consumer Qualification Increased Reliability
Notes through are on page 9
Absolute Maximum Ratings
Parameter Max. Units
VGS Gate-to-Source Voltage ± 25 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -11
A
ID @ TA= 70°C Continuous Drain Current, VGS @ 10V -9.0
IDM Pulsed Drain Current -90
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V -38
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V -24
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited) -24
PD @TA = 25°C Power Dissipation 2.6
W
PD @TC(Bottom) = 25°C Power Dissipation 33
Linear Derating Factor 0.021 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Applications
System/load switch,
Charge or discharge switch for battery protection
D
D
D
D
S
S
S
G4
3
2
1
5
7
6
8
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IRFHM9391TRPbF
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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance
––– 10 ––– VGS = -20V, ID = -11A
––– 11.7 14.6 VGS = -10V, ID = -11A
––– 18 22.5 VGS = -4.5V, ID = -11A
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V
VDS = VGS, ID = -25µA
VGS(th) Gate Threshold Voltage Coefficient ––– -5.1 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– -1.0
µA VDS = -24V, VGS = 0V
––– ––– -150 VDS = -24V, VGS = 0V,TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -10 µA VGS = -25V
Gate-to-Source Reverse Leakage ––– ––– 10 VGS = 25V
gfs Forward Transconductance 16 ––– ––– S VDS = -10V, ID = -9.0A
Qg Total Gate Charge ––– 16 ––– nC VGS = -4.5V, VDS =-15V, ID = -9.0A
Qg Total Gate Charge ––– 32 48
Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.0 ––– VDS = -15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC VGS = -10V
Qgd Gate-to-Drain Charge ––– 8.0 ––– ID = -9.0A
Qgodr Gate Charge Overdrive ––– 19.6 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 9.4 –––
Qoss Output Charge ––– 9.0 ––– nC VDS = -16V, VGS = 0V
RG Gate Resistance ––– 16 –––
td(on) Turn-On Delay Time ––– 11 ––– VDD = -15V, VGS = -4.5V
tr Rise Time ––– 27 ––– ns ID = -1.0A
td(off) Turn-Off Delay Time ––– 72 ––– RG = 6.8
tf Fall Time ––– 60 –––
Ciss Input Capacitance ––– 1543 ––– VGS = 0V
Coss Output Capacitance ––– 310 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 208 ––– ƒ = 1.0KHz
m
Parameter Typ. Max. Units
RJC (Bottom) Junction-to-Case ––– 3.8
RJC (Top) Junction-to-Case ––– 42
°C/W
RJA Junction-to-Ambient ––– 47
RJA (<10s) Junction-to-Ambient ––– 32
Thermal Resistance
G
D
S
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– -2.8 MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– -90 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.8A, VGS = 0V
trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = -2.8A, VDD = -24V
Qrr Reverse Recovery Charge ––– 25 38 nC di/dt = 100A/µs
A
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy –––
75 mJ
IRFHM9391TRPbF
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Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
0.1 110 100
-V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current (A)
VGS
TOP -10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
BOTTOM -2.7V
60µs PULSE WIDTH
Tj = 25°C
-2.7V
0.1 110 100
-V DS, Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 150°C
-2.7V
VGS
TOP -10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
BOTTOM -2.7V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -11A
VGS = -10V
110 100
-VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 KHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30 35 40 45
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
-VGS, Gate-to-Source Voltage (V)
VDS= -24V
VDS= -15V
VDS= -6V
ID= -9A
1.5 22.5 33.5 44.5 55.5
-VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
-ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 150°C
VDS = -15V
60µs PULSE WIDTH
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Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
-VGS(th), Gate threshold Voltage (V)
ID = -25uA
Fig 10. Threshold Voltage Vs. Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.4 0.6 0.8 1.0 1.2
-VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
-ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100 1000
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z
thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0
2
4
6
8
10
12
-ID, Drain Current (A)
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
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Fig 12. On– Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typical Avalanche Current vs. Pulsewidth
0 5 10 15 20 25
-VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
RDS(on), Drain-to -Source On Resistance (m)
ID = -11A
TJ = 25°C
TJ = 125°C
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -3.2A
-4.5A
BOTTOM -9.0A
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.01
0.1
1
10
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
IRFHM9391TRPbF
6 2016-2-23
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 18. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 19. Gate Charge Waveform
Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
Fig 16a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 16b. Unclamped Inductive Waveforms
IRFHM9391TRPbF
7 2016-2-23
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3 x 3.3 Outline “C” Package Details
PQFN 3.3 x 3.3 Outline “G” Package Details
5876
#1 324
#1 2 3 4
8765
5876
1324
1234
8765
IRFHM9391TRPbF
8 2016-2-23
PQFN 3.3 x 3.3 Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Bo
W
P1
Ao
Ko
CODE
TAPE DIMENSIONS
REEL DIMENSIONS
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Pitch between successive cavity centers
Overall width of the carrier tape
Bo
W
P1
Ao
Ko
DIMENSION (MM)
CODE MIN MAX
DIMENSION (INCH)
MIN MAX
3.50 3.70 .138 .146
1.10 1.30
7.90 8.10
.043 .051
11.80 12.20
.311 .319
12.30 12.50
.465 .480
.484 .492
3.50 3.70 .138 .146
DESCRIPTION
W1
Qty 4000
Reel Diameter 13 Inches
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
PQFN 3.3 x 3.3 Part Marking
XXXX
?YWW?
XXXXX
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
MARKING CODE
(Per Marking Spec)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
DATE CODE
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PIN 1
IDENTIFIER
IRFHM9391TRPbF
9 2016-2-23
Notes:
Starting TJ = 25°C, L = 1.872mH, RG = 50, IAS = -9A.
Pulse width 400µs; duty cycle 2%.
R
is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited by source bonding technology.
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Qualification Information†
Qualification Level
Moisture Sensitivity Level PQFN 3.3mm x 3.3mm MSL1
(per JEDEC J-STD-020D††)
RoHS Compliant Yes
Consumer††
(per JEDEC JESD47F guidelines)
IRFHM9391TRPbF
10 2016-2-23
Revision History
Date Comments
7/1/2014
Remove “SAWN” package outline on page 7.
Updated part marking on page 7.
Updated tape and reel on page 8.
2/23/2016
Updated datasheet with corporate template
Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C” and
“Option G” on page 7.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
