IPB60R380P6,IPP60R380P6,IPD60R380P6, IPA60R380P6 MOSFET 600VCoolMOSP6PowerTransistor DPAK CoolMOSTMisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOSTMP6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. PG-TO220 DPAK tab tab tab 2 1 1 3 2 3 PG-TO220FP Features *IncreasedMOSFETdv/dtruggedness *ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *Veryhighcommutationruggedness *Easytouse/drive *Pb-freeplating,Halogenfreemoldcompound *QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 380 m Qg.typ 19 nC ID,pulse 29 A Eoss@400V 2.7 J Body diode di/dt 500 A/s Type/OrderingCode Package IPB60R380P6 PG-TO 263-3 IPP60R380P6 PG-TO 220-3 IPD60R380P6 PG-TO 252-3 IPA60R380P6 PG-TO 220 FullPAK Final Data Sheet Marking 6R380P6 1 RelatedLinks see Appendix A Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Final Data Sheet 2 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 10.6 6.7 A TC=25C TC=100C - 29 A TC=25C - - 210 mJ ID=1.8A; VDD=50V; see table 12 EAR - - 0.32 mJ ID=1.8A; VDD=50V; see table 12 Avalanche current, repetitive IAR - - 1.8 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-220, TO-252, TO-263 Ptot - - 83 W TC=25C Power dissipation (FullPAK) TO-220FP Ptot - - 31 W TC=25C Storage temperature Tstg -55 - 150 C - Operating junction temperature Tj -55 - 150 C - Mounting torque (Non FullPAK) TO-220 - - - 60 Ncm M3 and M3.5 screws Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 9.2 A TC=25C Diode pulse current IS,pulse - - 29 A TC=25C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25C see table 10 Maximum diode commutation speed dif/dt - - 500 A/s VDS=0...400V,ISD<=IS,Tj=25C see table 10 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25C,t=1min Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 2Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO-220 Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.5 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 C 1.6mm (0.063 in.) from case for 10s Unit Note/TestCondition Tsold Table4Thermalcharacteristics(FullPAK)TO-220FP Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4 C/W - Thermal resistance, junction - ambient RthJA - - 80 C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 C 1.6mm (0.063 in.) from case for 10s Unit Note/TestCondition Tsold Table5ThermalcharacteristicsTO-252,TO-263 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.5 C/W - Thermal resistance, junction - ambient RthJA - - 62 C/W device on PCB, minimal footprint Thermal resistance, junction - ambient RthJA for SMD version - 35 45 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thickness) copper area C/W for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed - - 260 C Final Data Sheet Tsold 4 reflow MSL1 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 3Electricalcharacteristics atTj=25C,unlessotherwisespecified Table6Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 4.0 4.5 V VDS=VGS,ID=0.32mA - 10 1 - A VDS=600,VGS=0V,Tj=25C VDS=600,VGS=0V,Tj=150C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.342 0.889 0.380 - VGS=10V,ID=3.8A,Tj=25C VGS=10V,ID=3.8A,Tj=150C Gate resistance RG - 7.8 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 3.5 Zero gate voltage drain current IDSS Gate-source leakage current Table7Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 877 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 42 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 33 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 135 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4;seetable11 Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4;seetable11 Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4;seetable11 Fall time tf - 7 - ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4;seetable11 Unit Note/TestCondition Table8Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5.4 - nC VDD=400V,ID=4.8A,VGS=0to10V Gate to drain charge Qgd - 7 - nC VDD=400V,ID=4.8A,VGS=0to10V Gate charge total Qg - 19 - nC VDD=400V,ID=4.8A,VGS=0to10V Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=4.8A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 5 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Table9Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=4.8A,Tj=25C 232 - ns VR=400V,IF=4.8A,diF/dt=100A/s; see table 10 - 2.1 - C VR=400V,IF=4.8A,diF/dt=100A/s; see table 10 - 17 - A VR=400V,IF=4.8A,diF/dt=100A/s; see table 10 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Powerdissipation(FullPAK) 90 35 80 30 70 25 50 Ptot[W] Ptot[W] 60 40 20 15 30 10 20 5 10 0 0 25 50 75 100 125 0 150 0 25 50 TC[C] 75 100 125 150 TC[C] Ptot=f(TC) Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) Diagram4:Max.transientthermalimpedance(FullPAK) 1 101 10 0.5 100 0.5 0.2 0.1 0.05 -1 10 0.05 0.02 10 0.02 0.2 0.1 ZthJC[K/W] ZthJC[K/W] 100 -1 0.01 0.01 single pulse 10-2 10-5 single pulse 10-4 10-3 10-2 10-1 10-2 10-5 10-4 10-3 tp[s] 10-1 100 101 tp[s] ZthJC=f(tP);parameter:D=tp/T Final Data Sheet 10-2 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Diagram5:Safeoperatingarea(NonFullPAK) Diagram6:Safeoperatingarea(FullPAK) 2 102 10 1 s 1 s 10 s 101 10 s 101 100 s 100 s 1 ms 10 1 ms 0 10 0 10 ms ID[A] ID[A] 10 ms DC DC 10-1 10-1 10-2 10-2 10-3 10-3 100 101 102 10-4 103 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25C;D=0;parameter:tp ID=f(VDS);TC=25C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) Diagram8:Safeoperatingarea(FullPAK) 2 103 102 10 1 s 1 s 101 10 s 10 1 10 0 10 s 100 s 100 s 1 ms 1 ms 0 10 10 ms ID[A] ID[A] 10 ms DC DC 10-1 10-1 10-2 10-2 10-3 10-3 100 101 102 103 10-4 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=80C;D=0;parameter:tp ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 8 103 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Diagram9:Typ.outputcharacteristics Diagram10:Typ.outputcharacteristics 30 18 20 V 10 V 20 V 10 V 8V 25 15 8V 7V 12 ID[A] ID[A] 20 7V 15 9 6V 10 6 5.5 V 6V 5 3 5V 5.5 V 0 4.5 V 0 5 10 5V 15 0 20 4.5 V 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance Diagram12:Drain-sourceon-stateresistance 2.00 1.00 1.90 0.90 1.80 1.70 0.80 1.60 0.70 1.40 5.5 V 1.30 6V 6.5 V RDS(on)[] RDS(on)[] 1.50 7V 10 V 1.20 1.10 0.60 typ 98% 0.50 0.40 20 V 1.00 0.30 0.90 0.80 0.20 0.70 0.60 0 5 10 15 20 0.10 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=3.8A;VGS=10V 9 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Diagram13:Typ.transfercharacteristics Diagram14:Typ.gatecharge 30 10 25 C 9 25 8 120 V 7 20 480 V 15 VGS[V] ID[A] 6 150 C 5 4 10 3 2 5 1 0 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 20 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=4.8Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode Diagram16:Avalancheenergy 2 10 225 200 175 101 IF[A] 125 C EAS[mJ] 150 25 C 100 125 100 75 50 25 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.8A;VDD=50V 10 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Diagram17:Drain-sourcebreakdownvoltage Diagram18:Typ.capacitances 104 700 680 660 Ciss 103 620 C[pF] VBR(DSS)[V] 640 600 102 Coss 580 101 560 Crss 540 520 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy 4.0 3.5 3.0 Eoss[J] 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 5TestCircuits Table10Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table11Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table12Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 12 ID VDS Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches Final Data Sheet 13 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Figure2OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 14 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 Figure3OutlinePG-TO252-3,dimensionsinmm/inches Final Data Sheet 15 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 Q MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.86 2.42 0.65 0.90 0.95 1.38 0.95 1.51 0.65 1.38 0.65 1.51 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 28.70 29.75 13.75 12.78 2.83 3.45 3.00 3.30 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 Figure4OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 16 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 7AppendixA Table13RelatedLinks * IFXCoolMOSTMP6Webpage:www.infineon.com * IFXCoolMOSTMP6applicationnote:www.infineon.com * IFXCoolMOSTMP6simulationmodel:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 17 Rev.2.3,2017-08-22 600VCoolMOSP6PowerTransistor IPB60R380P6,IPP60R380P6,IPD60R380P6,IPA60R380P6 RevisionHistory IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 Revision:2017-08-22,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2013-12-05 Release of final version 2.1 2013-12-05 Release of multi-package datasheet 2.2 2015-07-10 PG-TO 263 package added 2.3 2017-08-22 Updated TO220 Full PAK package drawing on page 16 TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 18 Rev.2.3,2017-08-22