FCPF190N60E_F152 - ON SEMICONDUCTOR

July 2013

FCPF190N60E_F152 — N-Channel MOSFET

FCPF190N60E_F152 Rev. C0 www.fairchildsemi.com1

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FCPF190N60E_F152 Unit

VDSS Drain to Source Voltage 600 V

VGSS Gate to Source Voltage - DC ±20 V

- AC (f > 1 Hz) ±30 V

IDDrain Current -Continuous (TC = 25oC) 20.6* A

-Continuous (TC = 100oC) 13.1*

IDM Drain Current - Pulsed (Note 1) 61.8* A

EAS Single Pulsed Avalanche Energy (Note 2) 400 mJ

IAR Avalanche Current (Note 1) 4.0 A

EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

MOSFET dv/dt 100

PDPower Dissipation (TC = 25oC) 39 W

- Derate above 25oC0.31W/

oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 oC

Symbol Parameter FCPF190N60E_F152 Unit

RθJC Thermal Resistance, Junction to Case 3.2 oC/WRθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5

RθJA Thermal Resistance, Junction to Ambient 62.5

FCPF190N60E_F152

N-Channel SuperFET® II MOSFET

600 V, 20.6 A, 190 mΩ

Features

• 650 V @TJ = 150°C

•Max. R

DS(on) = 190 mΩ

• Ultra Low Gate Charge (Typ. Qg = 63 n C)

• Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)

• 100% Avalanche Tested

Aplications

• LCD / LED / PDP TV Lighting

• Solar Inverter

• AC-DC Power Supply

Description

SuperFET®II MOSFET is Fairchild Semiconductor®’s first gener-

ation of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-resis-

tance and lower gate charge performance. This advanced tech-

nology is tailored to minimize conduction loss, provide superior

switching performance, and withstand extreme dv/dt rate and

higher avalanche energy. Consequently, SuperFET®II MOSFET

is suitable for various AC/DC power conversion for system minia-

turization and higher efficiency.

G

S

D

TO-220F

GS

D

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com

2

FCPF190N60E_F152 Rev. C0

Package Marking and Ordering Information

For Fairchild's defini tion of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.

Electrical Characteristics TC = 25oC unless otherwise noted

Off Characteristic s

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Eco Status Packaging Type Quantity

FCPF190N60E FCPF190N60E_F152 TO-220F Green Tube 50

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain to Source Breakdown Voltage VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V

VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 10mA, Referenced to 25oC - 0.67 - V/oC

BVDS Drain-Source Avalanche Breakdown

Voltage VGS = 0V, ID = 20A - 700 - V

IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μA

VDS = 480V, TC = 125oC--10

IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 μA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA2.5-3.5V

RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 10A - 0.16 0.19 Ω

gFS Forward Transconductance VDS = 20V, ID = 10A -20-S

Ciss Input Capacitance VDS = 25V, VGS = 0V

f = 1MHz

- 2385 3175 pF

Coss Output Capacitance - 1795 2396 pF

Crss Reverse Transfer Capacitance - 110 165 pF

Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.Hz - 42 - pF

Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 178 - pF

Qg(tot) Total Gate Charge at 10V VDS = 380V, ID = 10A

VGS = 10V

(Note 4)

-6382nC

Qgs Gate to Source Gate Charge - 10 - nC

Qgd Gate to Drain “Miller” Charge - 24 - nC

ESR Equivalent Series Resistance f =1MHz - 5 - Ω

td(on) Turn-On Delay Time VDD = 380V, ID = 10A

VGS = 10V, RG = 4.7Ω

(Note 4)

-2356ns

trTurn-On Rise Time - 14 38 ns

td(off) Turn-Off Delay Time - 101 212 ns

tfTurn-Off Fall Time - 15 40 ns

ISMaximum Continuous Drain to Source Diode Forward Current - - 20.2 A

ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A

VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.2 V

trr Reverse Recovery Time VGS = 0V, ISD = 10A

dIF/dt = 100A/μs - 308 - ns

Qrr Reverse Recovery Charge - 4.8 - μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com

3

FCPF190N60E_F152 Rev. C0

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 10

0.3

1

10

50

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

ID, Drain Current[ A]

VDS, Drain-Source V oltage [V ]

VGS = 15.0V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

2345678

1

10

100

-55oC

150oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25oC

ID, Drain Current[ A]

VGS, Gate-Source Voltage[V ]

0 102030405060

0.1

0.2

0.3

0.4

*Note : TC = 25oC

VGS = 20V

VGS = 10V

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1

10

100

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

150oC

IS, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 100 600

0.5

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz Crss

Capacitanc es [pF]

VDS, Drain-Source Voltage [V]

0 1428425670

0

2

4

6

8

10

*Note: ID = 10A

VDS = 120V

VDS = 300V

VDS = 480V

VGS, Gate-Source Voltage [V]

Qg, T ota l Ga te C h ar ge [nC ]

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com

4

FCPF190N60E_F152 Rev. C0

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Eoss vs. Drain to Source Voltage

vs. Case Temperature Switching Capability

Figure 11. Maximum Drain Current

-80 -40 0 40 80 120 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 10A

RDS(on), [Normalized]

Drain-Source On-Resistance

TJ, Junction Temp erature [oC]

-80 -40 0 40 80 120 160

0.8

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 10mA

BVDSS, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

0.1 1 10 100 1000

0.01

0.1

1

10

100

10μs

100μs

1ms

10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

0 100 200 300 400 500 600

0

2

4

6

8

10

EOSS, [μJ]

VDS, Drain to Source Voltage [V]

25 50 75 100 125 150

0

5

10

15

20

25

ID, Drain Current [A]

TC, Case T em p erature [oC]

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com5

FCPF190N60E_F152 Rev. C0

Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve

10-5 10-4 10-3 10-2 10-1 110

100

0.01

0.1

1

5

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZθJC(t) = 3.2oC/W Max.

2. Dut y Factor , D = t1/t2

3. TJM - TC = PDM * Z θJC(t)

0.5

Single pulse

Thermal Response [ZθJC]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com

6

FCPF190N60E_F152 Rev. C0

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com

7

FCPF190N60E_F152 Rev. C0

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RGSame T ype

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

L

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Perio d

--------------------------

DUT

VDS

+

_

Driver

RGSame T ype

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

LL

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Perio d

--------------------------

D = Gate Pulse Width

Gate Pulse Perio d

--------------------------

FCPF190N60E_F152 — N-Channel MOSFET

www.fairchildsemi.com

8

FCPF190N60E_F152 Rev. C0

Mechanical Dimensions

* Front/Back Side Isolation Vo ltage : AC 2500V

TO-220F

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TO-220, MOLDED, 3LD, FULL PACK, EIAJ SC91

FCPF190N60E_F152 — N-Channel MOSFET

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Rev. I64

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®

FCPF190N60E_F152 Rev. C0