IM69D120 High performance digital XENSIVTM MEMS microphone Description The IM69D120 is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions and a high acoustic overload point is required. Infineon's Dual Backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar as utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic range of 95dB. The microphone distortion does not exceed 1% even at sound pressure levels of 118dBSPL. The flat frequency response ( 28Hz low-frequency roll-off) and tight manufacturing tolerance result in close phase matching of the microphones, which is important for multi-microphone (array) applications. With its low equivalent noise floor of 25dBSPL (SNR 69dB(A)) the microphone is no longer the limiting factor in the audio signal chain and enables higher performance of voice recognition algorithms. The digital microphone ASIC contains an extremely low-noise preamplifier and a high-performance sigma-delta ADC. Different power modes can be selected in order to suit specific current consumption requirements. Each IM69D120 microphone is calibrated with an advanced Infineon calibration algorithm, resulting in small sensitivity tolerances ( 1dB). The phase response is tightly matched ( 2) between microphones, in order to support beamforming applications. Features * * * Dynamic range of 95dB - Signal to noise ratio of 69dB(A) SNR - <1% total harmonic distortions up to 118dBSPL - Acoustic overload point at 120dBSPL Sensitivity ( 1dB) and phase ( 2 @1kHz) matched Flat frequency response with low frequency roll off at 28Hz * * * * * Very fast analog to digital conversion speed (6s latency @1kHz Power optimized modes determined by PDM clock frequency Package dimensions: 4mm x 3mm x 1.2mm PDM output Omnidirectional pickup pattern Typical applications * * Devices with Voice User Interface (VUI) - Smart speakers - Home automation - IOT devices Active Noise Cancellation (ANC) headphones and earphones Datasheet www.infineon.com * * High quality audio capturing - Conference systems - Cameras and camcorders Industrial or home monitoring with audio pattern detection Please read the Important Notice and Warnings at the end of this document 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Use cases Use cases * * Below 1% total harmonic distortion - Voice command during music from the loud speaker - Effective active noise cancellation even close to loud noise source - Recordings in a discotheque or at a rock concert High Signal to noise ratio - Far field audio signal pick-up - Low volume audio and whispered voice capturing - Microphone noise is no longer limiting the audio chain * * Sensitivity and phase matching - Full utilization of voice algorithms capability - Audio beam forming - High and precise attenuation of background noise Power optimized modes - Low current consumption for always on applications - Long operating time of battery powered devices Block diagram GROUND MEMS BIAS CHARGE PUMP VDD VOLTAGE REGULATORS DATA BACKPLATE 1 MEMBRANE ADC AMP BACKPLATE 2 DIGITAL SIGNAL PROCESSING SELECT CLOCK MEMS DIGITAL CORE POWER MODE DETECTOR CALIBRATION COEFFICIENTS ASIC Figure 1 1-BIT PDM INTERFACE IM69D120 block diagram Product validation Technology qualified for industrial applications. Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or alternatively JEDEC47/20/22. Datasheet 2 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Typical applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Use cases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1 Typical performance characterstics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2 2.1 Acoustic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Free field frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 3 3.1 3.2 3.3 Electrical parameters and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Typical stereo application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Reliability specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Footprint and stencil recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 3 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Typical performance characterstics 1 Typical performance characterstics Test conditions: VDD = 1.8V, fCLK = 3.072MHz, no load on DATA Figure 2 Typical freefield frequency response Figure 3 Typical THD vs SPL Figure 4 Typical phase response vs frequency Figure 5 Typical group delay vs frequency Figure 6 Typical IDD vs VDD Figure 7 Typical noise floor (unweighted) Datasheet 4 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Acoustic characteristics 2 Acoustic characteristics Test conditions ( unless otherwise specified in the table): VDD = 1.8V, fCLK = 3.072MHz, TA = 25C, 55% R.H., audio bandwidth 20Hz to 20kHz, select pin grounded, no load on DATA, Tedge = 9ns Table 1 IM69D130 acoustic specifications Parameter Symbol Sensitivity Values Min. Typ. Max. -27 -26 -25 Unit Note or Test condition dBFS 1kHz, 94 dBSPL, all operating modes Acoustic Overload Point AOP 120 dBSPL THD = 10%, all operating modes Signal to Noise Ratio SNR 69 dB(A) A-Weighted Noise Floor Total Harmonic Distortion fclock=3.072MHz fclock=2.4MHz 68 fclock=1.536MHz 66 fclock=768kHz 64 fclock=3.072MHz -95 fclock=2.4MHz -94 fclock=1.536MHz -92 fclock=768kHz -90 94dBSPL Phase Response Directivity Polarity Datasheet 0.5 dBFS(A) A-Weighted 20Hz to 8kHz bandwidth, A-Weighted % Measuring 2nd to 5th harmonics; 1kHz, all operating modes 28 Hz -3dB point relative to 1kHz 250Hz 70 s 600Hz 15 1kHz 6 4kHz 1 75Hz 19 1kHz 2 3kHz -1 118dBSPL 1.0 119dBSPL 2.0 120dBSPL 10.0 Low Frequency Cutoff Point Group Delay THD 20Hz to 8kHz bandwidth, A-Weighted fC LP Omnidirectional Pickup pattern Positive pressure increases density of 1's, negative pressure decreases density of 1's in data output 5 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Acoustic characteristics 2.1 Free field frequency response Figure 8 IM69D120 free field frequency response Table 2 IM69D120 free field frequency response, normalized to 1kHz sensitivity value Datasheet Frequency (Hz) Upper Limit (dB) Lower Limit (dB) 25 -2 -5 60 +0.5 -1.5 800 +1 -1 1000 0 0 1200 +1 -1 6000 +1 -2 8000 +4 -2 15000 +9 -2 6 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Electrical parameters and characteristics 3 Electrical parameters and characteristics 3.1 Absolute maximum ratings Stresses at or above the listed maximum ratings may affect device reliability or cause permanent device damage. Functional device operation at these conditions is not guaranteed. Table 3 Absolute maximum ratings Parameter Symbol Values Min. Voltage on any Pin Unit Max. Vmax 4 V Storage Temperature TS -40 125 C Ambient Temperature TA -40 70 C -40 100 C 3.2 Table 4 Note / Test Condition VDD>3.0V Electrical parameters Electrical parameters and digital interface input Parameter Symbol Values Min. Supply Voltage VDD 1.62 Clock Frequency Range fclock 2.9 Operating Modes Typ. V 3.072 3.3 MHz 2.1 2.4 2.65 1.05 1.536 1.9 400 768 950 fclock Clock Duty Cycle DATA = high-Z 50 ms 0.4 3.3 MHz 40 60 % fclock<2.65MHz 48 52 % fclock2.9MHz 13 ns Clock Rise/Fall Time Input Logic Low Level VIL -0.3 0.35xVDD V Input Logic High Level VIH 0.65xVDD VDD+0.3 V 200 pF Output Load Capacitance on DATA Datasheet A 100nF bypass capacitor should be placed close to the microphone's VDD pin to ensure best SNR performance kHz 250 VDD Ramp-up Time Note / Test Condition Max. 3.6 Standby Mode PDM Clock Frequency Unit Cload 7 Time until VDD VDD_min 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Electrical parameters and characteristics 3.3 Electrical characteristics Test conditions (unless otherwise specified in the table): VDD= 1.8V, TA=25C, 55% R.H. Table 5 General electrical characteristics Parameter Symbol Values Min. Unit Typ. Max. 980 1300 800 1050 fclock=1.536MHz 620 800 fclock=768kHz 300 380 25 50 Current fclock=3.072MHz Consumption fclock=2.4MHz IDD Standby Mode Istandby Clock Off Mode Iclock_off Short Circuit Current Power Supply Rejection A 1 1 20 PSR1k_NM -80 PSR217_NM -86 No load on DATA CLOCK pulled low mA dBFS Grounded DATA pin 100mVpp sine wave on VDD swept from 200Hz to 20kHz dBFS(A) 100mVrms, 217Hz square wave on VDD. Aweighted Startup Time 0.5dB sensitivity accuracy 20 0.2dB sensitivity accuracy 50 Mode Switch 0.5dB sensitivity Time accuracy 20 0.2dB sensitivity accuracy 50 ms Time to start up in all operating modes after VDD_min and CLOCK have been applied ms Time to switch between operating modes. VDD remains on during the mode switch Hysteresis Width Vhys Output Logic Low Level VOL Output Logic High Level VOH 0.7xVDD Delay Time for DATA Driven tDD 40 80 ns Delay time from CLOCK edge (0.5xVDD) to DATA driven Delay Time for DATA High-Z1) tHZ 5 30 ns Delay time from CLOCK edge (0.5xVDD) to DATA high impedance state 1 0.1xVDD Note / Test Condition 0.29xVDD V 0.3xVDD V Iout= 2mA Iout= 2mA thold is depended on Cload Datasheet 8 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Electrical parameters and characteristics Table 5 General electrical characteristics (continued) Parameter Symbol Values Min. Delay Time for DATA Valid2) Figure 9 2 Typ. tDV Unit Note / Test Condition Max. 100 ns Delay time from CLOCK edge (0.5xVDD) to DATA valid (<0.3xVDD or >0.7xVDD) Timing diagram Load on data: Cload=100pF, Rload=100k Datasheet 9 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Typical stereo application circuit 4 Typical stereo application circuit VDD MIC 1 CVDD VDD MIC 2 CVDD LR LR VDD GND CLK DATA RTERM RTERM GND DATA CLK DATA CLK CODEC Figure 10 IM69D120 stereo mode configuration Note: For best performance it is strongly recommended to place a 100nF (CVDD_typical) capacitor between VDD and ground. The capacitor should be placed as close to VDD as possible. A termination resistor(RTERM) of about 100 may be added to reduce the ringing and overshoot on the output signal. Datasheet 10 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Reliability specifications 5 Reliability specifications The microphone sensitivity after stress must deviate by no more than 3dB from the initial value. Table 6 Reliability tests Test Test Condition Vibration 20Hz to 2000Hz with a peak MIL-STD-883J acceleration of 20g in X, Y, and Z for 4 minutes each, total 4 cycles High Temperature Storage Ta=+125C, 1000 hours JESD22 A-103E Low Temperature Storage Ta=-40C, 1000 hours JESD22-A119A High Temperature Operation Ta=+125C, VDD=2.5V, 1000 hours JESD22 A-108D Cold Temperature Operation Ta=-40C, VDD=3.2V, 1000 hours JESD22 A-108D Temperature/Humidity Bias Ta=+85C, R.H = 85%, VDD=3.2V, 1000 hours JESD22-A101D Mechanical Shock 10000g/0.1msec direction x,y,z, 5 IEC 60068-2-27 shocks in each direction, 30 shocks in total Thermal cycle 1000 cycles, -40C to +125C, 30 minutes per cycle Reflow Solder 3 reflow cycles, peak temperature = IPC-JEDEC J-STD-020D-01 +260C ESD-SLT 3 contact discharges of 8kV to lid while Vdd and fclock are supplied according to the operational modes; (Vdd and fclock ground is separated from earth ground) IEC-61000-4-2 ESD-HBM 1 pulse of 2kV between all I/O pin combinations JS001 Latch up Trigger current from 150mA JESD 78E Datasheet Standard 11 JESD22.A104E 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Package information 6 Package information 3.000 0.1 1.200 0.1 0.700 0.850 0.300 0.250 0.04 0.300 4.000 0.1 3 2 4 0.700 Pin 1 XXXXXX 1 Type code 0.400 5 Date Code (YW) 2-D Barcode 1.320 Top view Side view 1.500 Bottom view 0.600 thru 0.850 1.200 2.000 All dimensions in mm Figure 11 IM69D120 package drawing Table 7 IM69D120 pin configuration Pin Number Name 1 DATA 2 VDD 3 CLOCK PDM clock input 4 SELECT PDM left/right select 5 GND Datasheet Description PDM data output Power supply Ground 12 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Footprint and stencil recommendation 7 Footprint and stencil recommendation The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS Microphone to ensure optimal performance. A PCB sound port size of radius 0.4 mm (diameter 0.8mm) is recommended. The board pad and stencil aperture recommendations shown in Figure 12 are based on Solder Mask Defined (SMD) pads. The specific design rules of the board manufacturer should be considered for individual design optimizations or adaptations. Figure 12 IM69D120 footprint and stencil recommendation Note: Dimensions are in millimeters unless otherwise specified Datasheet 13 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Packing 8 Packing For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A detailed drawing of the carrier can be seen in Figure 13 Figure 13 IM69D120 tape dimensions Note: For further information about Packing, please confer the Packing document which is available on the Infineon Technologies web page or contact your local sales, application, or quality engineer. Datasheet 14 1.0 2017-12-20 IM69D120 High performance digital XENSIVTM MEMS microphone Revision history Revision history Document version Date of release Description of changes 1.0 20.12.2017 Initial datasheet Datasheet 15 1.0 2017-12-20 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2017-12-20 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2017 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-tgc1507128354827 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie") . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury