IM69D120V01XTSA1 - INFINEON TECHNOLOGIES AG

IM69D120

High performance digital XENSIVTM MEMS microphone

Description

The IM69D120 is designed for applications where low self-noise (high SNR), wide dynamic range, low distortions

and a high acoustic overload point is required.

Infineon's Dual Backplate MEMS technology is based on a miniaturized symmetrical microphone design, similar

as utilized in studio condenser microphones, and results in high linearity of the output signal within a dynamic

range of 95dB. The microphone distortion does not exceed 1% even at sound pressure levels of 118dBSPL. The

flat frequency response ( 28Hz low-frequency roll-o) and tight manufacturing tolerance result in close phase

matching of the microphones, which is important for multi-microphone (array) applications.

With its low equivalent noise floor of 25dBSPL (SNR 69dB(A)) the microphone is no longer the limiting factor in

the audio signal chain and enables higher performance of voice recognition algorithms.

The digital microphone ASIC contains an extremely low-noise preamplifier and a high-performance sigma-delta

ADC. Dierent power modes can be selected in order to suit specific current consumption requirements.

Each IM69D120 microphone is calibrated with an advanced Infineon calibration algorithm, resulting in small

sensitivity tolerances (± 1dB). The phase response is tightly matched (± 2°) between microphones, in order to

support beamforming applications.

Features

• Dynamic range of 95dB

- Signal to noise ratio of 69dB(A) SNR

- <1% total harmonic distortions up to

118dBSPL

- Acoustic overload point at 120dBSPL

• Sensitivity (± 1dB) and phase (± 2° @1kHz)

matched

• Flat frequency response with low frequency roll o

at 28Hz

• Very fast analog to digital conversion speed (6µs

latency @1kHz

• Power optimized modes determined by PDM

clock frequency

• Package dimensions: 4mm x 3mm x 1.2mm

• PDM output

• Omnidirectional pickup pattern

Typical applications

• Devices with Voice User Interface (VUI)

- Smart speakers

- Home automation

- IOT devices

• Active Noise Cancellation (ANC) headphones and

earphones

• High quality audio capturing

- Conference systems

- Cameras and camcorders

• Industrial or home monitoring with audio pattern

detection

Datasheet Please read the Important Notice and Warnings at the end of this document 1.0

www.infineon.com 2017-12-20

Use cases

• Below 1% total harmonic distortion

- Voice command during music from the loud

speaker

-Eective active noise cancellation even close

to loud noise source

- Recordings in a discotheque or at a rock

concert

• High Signal to noise ratio

- Far field audio signal pick-up

- Low volume audio and whispered voice

capturing

- Microphone noise is no longer limiting the

audio chain

• Sensitivity and phase matching

- Full utilization of voice algorithms capability

- Audio beam forming

- High and precise attenuation of background

noise

• Power optimized modes

- Low current consumption for always on

applications

- Long operating time of battery powered

devices

Block diagram

DIGITAL SIGNAL

PROCESSING

VOLTAGE REGULATORS

POWER

MODE

DETECTOR

1-BIT

PDM

INTERFACE

CALIBRATION

COEFFICIENTS

DIGITAL CORE

VDDGROUND

DATA

SELECT

CLOCK

AMP

MEMS BIAS

CHARGE PUMP

ADC

MEMS

BACKPLATE 1

BACKPLATE 2

MEMBRANE

ASIC

Figure 1 IM69D120 block diagram

Product validation

Technology qualified for industrial applications.

Ready for validation in industrial applications according to the relevant tests of IEC 60747 and 60749 or

alternatively JEDEC47/20/22.

IM69D120

High performance digital XENSIVTM MEMS microphone

Use cases

Datasheet 2 1.0

2017-12-20

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Typical applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Use cases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1 Typical performance characterstics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

2 Acoustic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Free field frequency response . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

3 Electrical parameters and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.2 Electrical parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Typical stereo application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Reliability specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

7 Footprint and stencil recommendation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

8 Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

IM69D120

High performance digital XENSIVTM MEMS microphone

Table of contents

Datasheet 3 1.0

2017-12-20

1 Typical performance characterstics

Test conditions: VDD = 1.8V, fCLK = 3.072MHz, no load on DATA

Figure 2 Typical freefield frequency response Figure 3 Typical THD vs SPL

Figure 4 Typical phase response vs frequency Figure 5 Typical group delay vs frequency

Figure 6 Typical IDD vs VDD Figure 7 Typical noise floor (unweighted)

IM69D120

High performance digital XENSIVTM MEMS microphone

Typical performance characterstics

Datasheet 4 1.0

2017-12-20

2 Acoustic characteristics

Test conditions ( unless otherwise specified in the table): VDD = 1.8V, fCLK = 3.072MHz, TA = 25°C, 55% R.H., audio

bandwidth 20Hz to 20kHz, select pin grounded, no load on DATA, Tedge = 9ns

Table 1 IM69D130 acoustic specifications

Parameter Symbol Values Unit Note or Test condition

Min. Typ. Max.

Sensitivity -27 -26 -25 dBFS 1kHz, 94 dBSPL, all

operating modes

Acoustic Overload Point AOP 120 dBSPL THD = 10%, all operating

modes

Signal to

Noise Ratio

fclock=3.072MHz SNR 69 dB(A) A-Weighted

fclock=2.4MHz 68

fclock=1.536MHz 66

fclock=768kHz 64 20Hz to 8kHz bandwidth,

A-Weighted

Noise Floor fclock=3.072MHz -95 dBFS(A) A-Weighted

fclock=2.4MHz -94

fclock=1.536MHz -92

fclock=768kHz -90 20Hz to 8kHz bandwidth,

A-Weighted

Total

Harmonic

Distortion

94dBSPL THD 0.5 % Measuring 2nd to 5th

harmonics; 1kHz, all

operating modes

118dBSPL 1.0

119dBSPL 2.0

120dBSPL 10.0

Low Frequency Cuto Point fC LP 28 Hz -3dB point relative to 1kHz

Group Delay 250Hz 70 µs

600Hz 15

1kHz 6

4kHz 1

Phase

Response

75Hz 19 °

1kHz 2

3kHz -1

Directivity Omnidirectional Pickup pattern

Polarity Positive pressure increases

density of 1's, negative

pressure decreases density

of 1's in data output

IM69D120

High performance digital XENSIVTM MEMS microphone

Acoustic characteristics

Datasheet 5 1.0

2017-12-20

2.1 Free field frequency response

Figure 8 IM69D120 free field frequency response

Table 2 IM69D120 free field frequency response, normalized to 1kHz sensitivity value

Frequency (Hz) Upper Limit (dB) Lower Limit (dB)

25 -2 -5

60 +0.5 -1.5

800 +1 -1

1000 0 0

1200 +1 -1

6000 +1 -2

8000 +4 -2

15000 +9 -2

IM69D120

High performance digital XENSIVTM MEMS microphone

Acoustic characteristics

Datasheet 6 1.0

2017-12-20

3 Electrical parameters and characteristics

3.1 Absolute maximum ratings

Stresses at or above the listed maximum ratings may aect device reliability or cause permanent device

damage. Functional device operation at these conditions is not guaranteed.

Table 3 Absolute maximum ratings

Parameter Symbol Values Unit Note / Test Condition

Min. Max.

Voltage on any Pin Vmax 4 V

Storage Temperature TS-40 125 °C

Ambient Temperature TA-40 70 °C VDD>3.0V

-40 100 °C

3.2 Electrical parameters

Table 4 Electrical parameters and digital interface input

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Supply Voltage VDD 1.62 3.6 V A 100nF bypass capacitor

should be placed close to

the microphone's VDD pin

to ensure best SNR

performance

Clock

Frequency

Range

Operating

Modes

fclock 2.9 3.072 3.3 MHz

2.1 2.4 2.65

1.05 1.536 1.9

400 768 950 kHz

Standby Mode 250 DATA = high-Z

VDD Ramp-up Time 50 ms Time until VDD ≥ VDD_min

PDM Clock Frequency fclock 0.4 3.3 MHz

Clock Duty Cycle 40 60 % fclock<2.65MHz

48 52 % fclock≥2.9MHz

Clock Rise/Fall Time 13 ns

Input Logic Low Level VIL -0.3 0.35xVDD V

Input Logic High Level VIH 0.65xVDD VDD+0.3 V

Output Load Capacitance on

DATA

Cload 200 pF

IM69D120

High performance digital XENSIVTM MEMS microphone

Electrical parameters and characteristics

Datasheet 7 1.0

2017-12-20

3.3 Electrical characteristics

Test conditions (unless otherwise specified in the table): VDD= 1.8V, TA=25°C, 55% R.H.

Table 5 General electrical characteristics

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Current

Consumption

fclock=3.072MHz IDD 980 1300 μA No load on DATA

fclock=2.4MHz 800 1050

fclock=1.536MHz 620 800

fclock=768kHz 300 380

Standby Mode Istandby 25 50

Clock O Mode Iclock_o 1 CLOCK pulled low

Short Circuit Current 1 20 mA Grounded DATA pin

Power Supply Rejection PSR1k_NM -80 dBFS 100mVpp sine wave on

VDD swept from 200Hz to

20kHz

PSR217_NM -86 dBFS(A) 100mVrms, 217Hz square

wave on VDD. A-

weighted

Startup Time ±0.5dB sensitivity

accuracy

20 ms Time to start up in all

operating modes aer

VDD_min and CLOCK have

been applied

±0.2dB sensitivity

accuracy

Mode Switch

Time

±0.5dB sensitivity

accuracy

20 ms Time to switch between

operating modes. VDD

remains on during the

mode switch

±0.2dB sensitivity

accuracy

Hysteresis Width Vhys 0.1xVDD 0.29xVDD V

Output Logic Low Level VOL 0.3xVDD V Iout= 2mA

Output Logic High Level VOH 0.7xVDD Iout= 2mA

Delay Time for DATA Driven tDD 40 80 ns Delay time from CLOCK

edge (0.5xVDD) to DATA

driven

Delay Time for DATA High-Z1) tHZ 5 30 ns Delay time from CLOCK

edge (0.5xVDD) to DATA

high impedance state

1thold is depended on Cload

IM69D120

High performance digital XENSIVTM MEMS microphone

Electrical parameters and characteristics

Datasheet 8 1.0

2017-12-20

Table 5 General electrical characteristics (continued)

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Delay Time for DATA Valid2) tDV 100 ns Delay time from CLOCK

edge (0.5xVDD) to DATA

valid (<0.3xVDD or

>0.7xVDD)

Figure 9 Timing diagram

2Load on data: Cload=100pF, Rload=100kΩ

IM69D120

High performance digital XENSIVTM MEMS microphone

Electrical parameters and characteristics

Datasheet 9 1.0

2017-12-20

4 Typical stereo application circuit

VDD

RTERM

CVDD CVDD

CLKDATA

CODEC

MIC 1 MIC 2

VDD VDD

GND GND

CLK CLK DATADATA

Figure 10 IM69D120 stereo mode configuration

Note:For best performance it is strongly recommended to place a 100nF (CVDD_typical) capacitor between

VDD and ground. The capacitor should be placed as close to VDD as possible. A termination

resistor(RTERM) of about 100Ω may be added to reduce the ringing and overshoot on the output

signal.

IM69D120

High performance digital XENSIVTM MEMS microphone

Typical stereo application circuit

Datasheet 10 1.0

2017-12-20

5 Reliability specifications

The microphone sensitivity aer stress must deviate by no more than 3dB from the initial value.

Table 6 Reliability tests

Test Test Condition Standard

Vibration 20Hz to 2000Hz with a peak

acceleration of 20g in X, Y, and Z for

4 minutes each, total 4 cycles

MIL-STD-883J

High Temperature Storage Ta=+125°C, 1000 hours JESD22 A-103E

Low Temperature Storage Ta=-40°C, 1000 hours JESD22-A119A

High Temperature Operation Ta=+125°C, VDD=2.5V, 1000 hours JESD22 A-108D

Cold Temperature Operation Ta=-40°C, VDD=3.2V, 1000 hours JESD22 A-108D

Temperature/Humidity Bias Ta=+85°C, R.H = 85%, VDD=3.2V,

1000 hours

JESD22-A101D

Mechanical Shock 10000g/0.1msec direction ±x,y,z, 5

shocks in each direction, 30 shocks

in total

IEC 60068-2-27

Thermal cycle 1000 cycles, -40°C to +125°C, 30

minutes per cycle

JESD22.A104E

Reflow Solder 3 reflow cycles, peak temperature =

+260°C

IPC-JEDEC J-STD-020D-01

ESD-SLT 3 contact discharges of ±8kV to lid

while Vdd and fclock are supplied

according to the operational

modes; (Vdd and fclock ground is

separated from earth ground)

IEC-61000-4-2

ESD-HBM 1 pulse of ±2kV between all I/O pin

combinations

JS001

Latch up Trigger current from ±150mA JESD 78E

IM69D120

High performance digital XENSIVTM MEMS microphone

Reliability specifications

Datasheet 11 1.0

2017-12-20

6 Package information

0.850

0.700

0.300

1.320

0.700

1.500

2.000

1.200

0.850

1.200 ±0.1

0.250 ±0.04

3.000 ±0.1

4.000

±0.1

All dimensions in mm

0.600 thru

0.400

XXXXXX

Pin 1

2-D

Barcode

Top view Side view Bottom view

Type code

Date Code (YW)

Figure 11 IM69D120 package drawing

Table 7 IM69D120 pin configuration

Pin Number Name Description

1 DATA PDM data output

2 VDD Power supply

3 CLOCK PDM clock input

4 SELECT PDM le/right select

5 GND Ground

IM69D120

High performance digital XENSIVTM MEMS microphone

Package information

Datasheet 12 1.0

2017-12-20

7 Footprint and stencil recommendation

The acoustic port hole diameter in the PCB should be larger than the acoustic port hole diameter of the MEMS

Microphone to ensure optimal performance. A PCB sound port size of radius 0.4 mm (diameter 0.8mm) is

recommended.

The board pad and stencil aperture recommendations shown in Figure 12 are based on Solder Mask Defined

(SMD) pads. The specific design rules of the board manufacturer should be considered for individual design

optimizations or adaptations.

Figure 12 IM69D120 footprint and stencil recommendation

Note:Dimensions are in millimeters unless otherwise specified

IM69D120

High performance digital XENSIVTM MEMS microphone

Footprint and stencil recommendation

Datasheet 13 1.0

2017-12-20

8 Packing

For shipping and assembly the Infineon microphones are packed in product specific tape-and-reel carriers. A

detailed drawing of the carrier can be seen in Figure 13

Figure 13 IM69D120 tape dimensions

Note:For further information about Packing, please confer the Packing document which is available on the

Infineon Technologies web page or contact your local sales, application, or quality engineer.

IM69D120

High performance digital XENSIVTM MEMS microphone

Packing

Datasheet 14 1.0

2017-12-20

Revision history

Document

version

Date of

release

Description of changes

1.0 20.12.2017 Initial datasheet

IM69D120

High performance digital XENSIVTM MEMS microphone

Revision history

Datasheet 15 1.0

2017-12-20

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2017-12-20

Published by

Infineon Technologies AG

81726 Munich, Germany

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-tgc1507128354827

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaenheitsgarantie”) .

With respect to any examples, hints or any typical values

stated herein and/or any information regarding the

application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities of

any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

The data contained in this document is exclusively

intended for technically trained sta. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oice.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury