BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR Central DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and ULTRAmini g SOT-523 CASE MAXIMUM RATINGS (T,=25C) SYMBOL BC857T BC856T Collector-Base Voltage VCBO 50 80 Collector-Emitter Voltage VCEO 45 65 Emitter-Base Voltage VEBO 5.0 Collector Current Io 100 Peak Collector Current lom 200 Peak Base Current IBM 100 Power Dissipation Pp 250 Operating and Storage Junction Temperature TE JTstg -65 to +150 Thermal Resistance OjA 500 ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IcBo Vcp= 30V 15 IcBo Vop= 30V, Ta=150C 5.0 IEBO Vep=5.0V 100 BVcBO Ic=10yA (BC857T) 50 BVcBO IG=10HA (BC856T) 80 BVCEO Ic=10mA (BC857T) 45 BVCEO Ic=10mA (BC856T) 65 BVEBO IlE=10pA 5.0 VCE(SAT) Ic=10mA, Ip=0.5mA 0.2 VCE(SAT) I=100mA, |p=5.0mA 0.4 VBE(ON) Io=2.0mA, VoE=5.0V 0.58 0.70 VBE(ON) Io=10mA, VoE=5.0V 0.77 fr VcE=5.0V, Ic=10mA, f=100MHz 100 Ge Vcp=10V, IE=0, f=1.0MHz 2.5 Cy VeEB=0.5V, Io=0, f=1.0MHz 10 NF VCE=5.0V, IG=200pA, Rg=2KQ, f= 1KHz, BW=200Hz 10 BC856AT BC856BT BC857AT BC857BT MIN MAX MIN MAX hee VoEH5.OV, Ic=2.0mA 125 250 220 475 For Typical Electrical Characteristic Data for this Device Process CP588, Please See Page 855. BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: PLEASE SEE MARKING CODE TABLE ON FOLLOWING PAGE 112 UNITS Vv Vv Vv mA mA mA mW oe CIW UNITS nA LA nA BC857CT MIN MAX 420 800 RO (30-October 2003) ce nt rd E BC856T SERIES 7T SERIE Semiconductor Corp. BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR SOT-523 CASE - MECHANICAL OUTLINE BOTTOM VIEW LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR __ DEVICE _| MARKING CODE ~BCBSBAT | GT6 BC856BT GT7 BC857AT GT8 BC857BT GT9 SOT-523 (REV: R2) BC857CT GTO RO (30-October 2003) 113