MMBF5460LT1 - ON Semiconductor

February, 2006 − Rev. 2 1Publication Order Number:

MMBF5460LT1/D

MMBF5460LT1

JFET − General Purpose

Transistor

P−Channel

Features

•Pb−Free Package is Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Gate Voltage VDG 40 Vdc

Reverse Gate−Source Voltage VGSR 40 Vdc

Forward Gate Current IGF 10 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Thermal Res istance, Junction−to−Ambient RqJA 556 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

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SOT−23 (TO−236)

CASE 318

STYLE 10

Device Package Shipping†

ORDERING INFORMATION

MMBF5460LT1 SOT−23 3,000 / Tape & Ree

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MMBF5460LT1G SOT−23

(Pb−Free) 3,000 / Tape & Ree

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

M6E M G

M6E = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

2 SOURCE

GATE

1 DRAIN

MMBF5460LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Gate−Source Breakdown Voltage

(IG = 10 mAdc, VDS = 0) V(BR)GSS 40 − − Vdc

Gate Reverse Current

(VGS = 20 Vdc, VDS = 0)

(VGS = 20 Vdc, VDS = 0, TA = 100°C)

IGSS −

−−

−5.0

1.0 nAdc

mAdc

Gate Source Cutoff Voltage

(VDS = 15 Vdc, ID = 1.0 mAdc) VGS(off) 0.75 − 6.0 Vdc

Gate Source Voltage

(VDS = 15 Vdc, ID = 0.1 mAdc) VGS 0.5 − 4.0 Vdc

ON CHARACTERISTICS

Zero−Gate−Voltage Drain Current

(VDS = 15 Vdc, VGS = 0) IDSS −1.0 − −5.0 mAdc

SMALL−SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |Yfs| 1000 − 4000 mmhos

Output Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) |yos| − − 75 mmhos

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − 5.0 7.0 pF

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − 1.0 2.0 pF

MMBF5460LT1

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Yfs FORWARD TRANSFER ADMITTANCE ( mhos)mYfs FORWARD TRANSFER ADMITTANCE ( mhos)m

DRAIN CURRENT versus GATE

SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE

versus DRAIN CURRENT

ID, DRAIN CURRENT (mA)

Yfs FORWARD TRANSFER ADMITTANCE ( mhos)m

4.0 4000

0 0.2

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 1. VGS(off) = 2.0 Volts

1.0

ID, DRAIN CURRENT (mA)

3.5

ID, DRAIN CURRENT (mA)

10 10000

0 1.0

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 2. VGS(off) = 4.0 Volts

ID, DRAIN CURRENT (mA)

16 10000

VGS, GATE−SOURCE VOLTAGE (VOLTS)

Figure 3. VGS(off) = 5.0 Volts

ID, DRAIN CURRENT (mA)

Figure 4. VGS(off) = 2.0 Volts

Figure 5. VGS(off) = 4.0 Volts

Figure 6. VGS(off) = 5.0 Volts

3.0

2.5

2.0

1.5

1.0

0.5

00.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VDS = 15 V

200

300

500

700

1000

2000

3000

0.2 0.3 0.5 0.7 2.0 3.0 4.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

00.5 1.5 2.0 2.5 3.0 3.5 4.0 500

700

1000

2000

3000

5000

7000

0.5 0.7 1.0 2.0 3.0 5.0 7.0

8.0

6.0

4.0

2.0

01.0 2.0 3.0 8.04.0 5.0 6.0 7.0 500

700

1000

2000

3000

5000

7000

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

TA = −55°C

25°C

125°C

VDS = 15 V

f = 1.0 kHz

VDS = 15 V

TA = −55°C

25°C

125°C

VDS = 15 V

TA = −55°C

25°C

125°C

VDS = 15 V

f = 1.0 kHz

VDS = 15 V

f = 1.0 kHz

MMBF5460LT1

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1000

0.1 0.2

ID, DRAIN CURRENT (mA)

Figure 7. Output Resistance

versus Drain Current

10 0.5 1.0 2.0 5.0 10

ross, OUTPUT RESISTANCE (k ohms)

C, CAPACITANCE (pF)

VDS, DRAIN−SOURCE VOLTAGE (VOLTS)

Figure 8. Capacitance versus

Drain−Source Voltage

NF, NOISE FIGURE (dB)

RS, SOURCE RESISTANCE (k Ohms)

Figure 9. Noise Figure versus

Source Resistance

Figure 10. Equivalent Low Frequency Circuit

100

200

300

500

700

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10 20 30 40

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

1.0 10 100 1000 10,000

NOTE:

1. Graphical data is presented for dc conditions. Tabular data is given

for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).

*Cosp is Coss in parallel with Series Combination of Ciss and Crss.

Crss

Ciss ross Coss | yfs | vi

COMMON SOURCE

y PARAMETERS FOR FREQUENCIES

BELOW 30 MHz

yis = jW Ciss

yos = jW Cosp * + 1/ross

yfs = yfs |

yrs = −jW Crss

VDS = 15 V

f = 1.0 kHz

IDSS = 3.0 mA

6.0 mA

10 mA

f = 1.0 MHz

VGS = 0

Ciss

Coss

Crss

VDS = 15 V

VGS = 0

f = 100 Hz

MMBF5460LT1

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,

NEW STANDARD 318−08.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.029

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 10:

PIN 1. DRAIN

2. SOURCE

3. GATE

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

MMBF5460LT1/D

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