D W DAWIN Electronics Preliminary TM DM2G200SH6N Dec. 2008 High Power Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-2 Package devices are optim ized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) =2.1V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package Package : 7DM-2 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 600 V VGES Gate-Emitter Voltage - 20 V IC Collector Current Tc = 25 250 A Tc = 80 200 A - 400 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current Tc = 80 200 A IFM Diode Maximum Forward Current - 400 A TSC Short Circuit Withstand Time Tc = 100 10 uS PD Maximum Power Dissipation Tc = 25 695 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 9 seconds - 260 - 4.0 N.m 2.0 N.m Mounting screw Torque :M6 Power terminals screw Torque :M5 Copyright@Dawin Electronics Corp. All right reserved 1/7 D W DAWIN Electronics Preliminary TM DM2G200SH6N Dec. 2008 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Values Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 250uA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Unit Typ. Max. 600 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =200mA , VCE = VGE 5.0 6.5 8.5 V ICES Collector cutoff Current VGE = VGES, VCE = 0V - - 250 uA IGES G - E leakage Current VGE = VGES, VCE = 0V - - 100 nA VCE(sat) Collector to Emitter IC=200A, VGE=15V @TC= 25 - 2.1 2.9 V saturation voltage IC=200A, VGE=15V @TC=100 - 2.4 - V Turn on delay tim e VCC = 300V , IC =200A - 110 - nS Turn on rise time VGE = 15V - 90 - nS Turn off delay tim e RG = 2 - 140 - nS Turn off fall time Inductive Load, @TC = 25 - 145 250 nS td(on) tr td(off) tf Min. Eon Turn on Switching Loss - 2.9 - mJ Eoff Turn off Switching Loss - 6.5 - mJ Ets Total Switching Loss - 9.4 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 300V, VGE = 15V @TC = 100 Qg Total Gate Charge VCC = 300V - 625 - nC Qge Gate-Emitter Charge VGE = 15V - 150 - nC Qgc Gate-Collector Charge IC = 200A - 215 - nC Copyright@Dawin Electronics Corp. All right reserved 2/7 D W DAWIN Electronics Preliminary TM DM2G200SH6N Dec. 2008 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=200A Min. Typ. Max. Tc =25 - 1.7 2.2 Tc =100 - 1.8 - Diode Reverse IF=200A, VR=300V Tc =25 - 120 140 Recovery Tim e di/dt= -200A/uS Tc =100 - 140 - Diode Peak Reverse Tc =25 - 40 45 Recovery Current Tc =100 - 47 - Diode Reverse Tc =25 - 2400 3150 Recovery Charge Tc =100 - 3290 - Unit V nS A nC Thermal Characteristics and Weight Values Symbol Parameter Conditions Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.18 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.37 /W RCS Case-to-Sink ( Conductive grease applied) 0.04 - - /W Weight Weight of Module - - 250 g Copyright@Dawin Electronics Corp. All right reserved 3/7 D W DAWIN Electronics Preliminary TM DM2G200SH6N Dec. 2008 Performance Curves 300 300 Common Emitter Tc= 25 Common Emitter Tc= 125 12V 250 Collector Current, IC [A] Collector Current, IC [A] 15V 20V V GE= 10V 200 150 100 50 V GE= 10V 200 150 100 0 0 1 2 3 4 5 6 7 8 0 1 Collector - Emitter Voltage, VCE [V] 2 3 4 5 6 7 8 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 300 280 240 250 Load Current [A] T C=25 200 T C=125 150 100 50 200 160 120 80 Duty cycle = 50% TC=125 Power Dissipation = 190W 40 0 0 0 1 2 3 4 5 6 7 0.1 8 1 10 100 1000 Frequency [KHz] Collector - Emitter Voltage, VCE [V] Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC=25 18 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 12V 20V 50 0 Collector Current, IC [A] 15V 250 16 14 12 10 8 6 200A 300A 4 IC=150A 2 0 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Common Emitter TC=125 18 16 14 12 10 8 6 200A 4 300A IC=150A 2 0 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/7 W Gate-Emitter Voltage ,VGE [V] DAWIN Electronics TM DM2G200SH6N Dec. 2008 1 15 Common Emitter RL = 2 TC = 25 12 Thermal Response Zthjc [/W] D Preliminary Vcc=300V 9 6 3 0 0 100 200 300 400 500 0.1 0.01 IGBT : DIODE : TC=25 0.001 1.E-05 600 Gate Charge, Qg [nc] 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Rectangular Pulse Duration [sec] Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance 2000 1000 1600 Collector Current, IC [A] Collector Current, IC [A] 1800 100 10 Single Non-repetitive Pulse T j125 VGE = 15V RG = 2 1 0 100 200 1400 1200 1000 800 600 400 200 0 300 400 500 600 700 0 Collector-Emitter Voltage, VCE [V] 300 400 500 270 240 50us Ic MAX. (Continuous) 100us 1ms 10 DC Operation Single Non-repetitive Pulse Tc = 25 Curves must be derated linerarly with increase In temperature 1 0.1 700 TJ 150 VGE 15V Ic MAX. (Pulsed) 100 600 Fig 10. SCSOA Characteristic Collector Current ,Ic [ A ] Collector Current, IC [A] 200 Collector-Emitter Voltage, VCE [V] Fig 9. RBSOA Characteristic 1000 100 210 180 150 120 90 60 30 0 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 160 Case Temperature, Tc [ ] Collector-Emitter Voltage, VCE [V] Fig 12. rated Current vs. Case Temperature Fig11. SOA characteristics Copyright@Dawin Electronics Corp. All right reserved 5/7 W DAWIN Electronics TM 300 800 Power Dissipation ,PD [ W ] DM2G200SH6N Dec. 2008 TJ 150 VGE 15V 700 Forward Current, IF [A] D Preliminary 600 500 400 300 200 100 0 250 T C=25 200 T C=125 150 100 50 0 0 20 40 60 80 100 120 140 160 0 Case Temperature, Tc [ ] 1 2 3 Forward Drop Voltage, VF [V] Fig 13. Power Dissipation vs. Case Temperature Fig 14. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 6/7 4 D W DAWIN Electronics Preliminary TM DM2G200SH6N Dec. 2008 Package Out Line Information 7DM-2 940.5 800.5 230.5 Dimensions in mm 230.5 M5 DP 9 6.40.2 3 480.5 13 0.3 4 0.3 6 7 2 6.00.5 17.00.5 14.00.5 14.00.5 6.00.5 48.00.5 19.00.5 14.00.5 6.80.5 LABEL PLATE MAX 31 22.0+2.0 -0.6 21.70.5 9.10.5 1.00.5 11 0.5 40.3 5 4 1 45.50.5 91.50.5 Copyright@Dawin Electronics Corp. All right reserved 7/7