Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
Description
DA WIN ’ S I G B T 7DM-2 Package dev ices are opt imized t o reduce losses
and swit ching noise in high f requency power conditioning electr ica l sy st ems.
These I G BT modules are ideally suited for power inverters, motors drives
and ot her applications w here swit ching losses are s ignif icant portion of the
t ot a l losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduct ion Loss : VCE(sat) =2.1V (typ.)
☞Fast & Soft Ant i-Paral lel FWD
☞Short circu it rated : Min. 10uS at TC=100℃
☞Reduced EM I and R FI
☞I solation Ty pe Package
Applications
Mot or Drives, High Power Inverters, Welding Machine, I nduction He ating,
UP S , CVC F, R obot ics , Servo Cont rols, High Speed SMP S
Absolu te M axi mu m Ratin g s@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
1/7
Equiv alent Circu it
E qu ival en t Ci r cuit and Packag e
Package : 7DM-2 Series
Please see the package out line inf ormat ion
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
TL
C o llec tor-E mitt e r V o lta g e
Gat e-Emitter Voltage
Collect or Current
Pulsed Collector Current
Diode Cont inuous Forward Current
Diode Maximum Forward Current
Short C ircuit Wit hst and T ime
Maximum Power Dissipation
Operat ing Junction Temperature
St orage Temperature Range
I solation Volt age
Maximum Lead Temp. for soldering
Purposes, 1/8”f rom case f or 9 seconds
Mount ing screw Torque :M6
Power terminals screw Torque :M5
600
±20
250
200
400
200
400
10
695
-40 ~ 150
-40 ~ 125
2500
260
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
℃
N.m
N.m
-
-
Tc = 25℃
Tc = 80℃
-
Tc = 80℃
-
Tc = 100℃
Tc = 25℃
-
-
AC 1 minute
-
-
High Power Lugge d Type IGBT Module
6
7
5
4
①②③
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
2/7
E l ectr ical Char acteristi cs o f IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions Min. Typ. Max.
C - E B reakdown V oltage
Temperat ure Coeff. of
Breakdown Voltage
G - E t hreshold volt age
Colle ctor cutoff Current
G - E leakage Current
Colle ctor to Emitter
sat uration v oltage
Turn on delay time
Tu rn o n ris e time
Turn off delay tim e
Turn off fall time
Turn on Swit ching Loss
Turn off Switching Loss
Tot al Switching Loss
Short C ircuit Wit hst and T ime
Tot al Gat e Charge
Gat e-Emitter Charge
Gate-Collect or Charge
600
-
5.0
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
6.5
-
-
2.1
2.4
110
90
140
145
2.9
6.5
9.4
-
625
150
215
-
-
8.5
250
±100
2.9
-
-
-
-
250
-
-
-
-
-
-
-
V
V/℃
V
uA
nA
V
V
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC= 250uA
VGE = 0V , IC= 1.0m A
IC= 200mA , VCE = VGE
VGE = VGES, VCE = 0V
VGE = V GES, VCE = 0 V
IC=200A, VGE=15V @TC= 25 ℃
IC=200A, VGE=15V @TC=100℃
VCC = 300V , IC=200A
VGE = ±15V
RG= 2Ω
I nduct iv e Load, @ TC = 25℃
VCC = 300V, VGE = ±15V
@TC= 100℃
VCC = 300V
VGE =±15V
IC= 200A
BVCES
ΔBVCES/
ΔTJ
VGE(th)
ICES
IGES
VCE(sat)
td(on)
tr
td(off )
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
3/7
E l ectr ical Char acteristi cs o f F RD @ TC=25℃(unless ot herwise specif ied )
Symbol Parameter Values UnitConditions Min. Typ. Max.
IF=200A
IF= 200A, VR=300V
di/ dt= -200A/ uS
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Tc =25℃
Tc = 100℃
Diode Forw ard Voltage
Diode Reverse
Recov ery Time
Diode Peak Reverse
Rec over y Cur r e nt
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.7
1.8
120
140
40
47
2400
3290
2.2
-
140
-
45
-
3150
-
V
nS
A
nC
Th ermal Character i stics and Wei g h t
Symbol Parameter Values UnitConditions Min. Typ. Max.
Junct ion-t o-Case(IG BT Part , Pe r 1/2 M odule)
Junct ion-t o-Case(DI O DE Part , Per 1/2 Module)
Case-t o-Sink ( Conduct iv e grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.18
0.37
-
250
-
-
0.04
-
RθJC
RθJC
RθCS
Weight
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
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P erfor m an ce Cur ves
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Collect or – Emitt er Voltage, VCE [V]
Coll e c to r Curr ent, I C[A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage
characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
20V
15V
12V
VGE= 10V
Comm on Emitter
Tc= 25℃
20V
15V
12V
VGE= 10V
Comm on Emitter
Tc= 125 ℃
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
C ommon E mitte r
TC=25℃
300A
200A
IC=150A
C ommon E mitte r
TC=125℃
300A
200A
IC=150A
Gate – Emitter Voltage, VGE [V]
Collect or – Emitt er Voltage, VCE [V]
TC=125℃
TC=25℃
Load Cu r r ent [A]
Frequen cy [KHz]
Du ty cycle = 5 0%
TC=125℃
Power Dissipation = 190W
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
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C ommon E mitte r
RL= 2Ω
TC= 25 ℃
Vcc=300V
IGBT :
DIODE :
TC=25℃
Fig 7. Gate Charge Characteristics Fig 8. Transient Thermal Impedance
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
Fig 9. RBSOA Characteristic Collect or-Emit t er Voltage, VCE [V]
Fig 10. SCSOA Characteristic
Coll e c to r Curr ent, I C[A]
Gate-Emitter Voltage ,VGE [V]
Gate Charge, Qg[nc] Rectangular Pulse Du ration [sec]
Therma l Response Zt hjc [ /W ]
℃
Case T emper ature, T c [ ℃]
Coll e c to r Curr ent ,I c [ A ]
Fig 12. rated Current vs. Case Temperature
Single N on-re petitive
Pulse Tj≤125℃
VGE = 15V
RG= 2Ω
TJ≤150℃
VGE ≥15V
Coll e c to r Curr ent, I C[A]
Collect or-Emit t er Voltage, VCE [V]
Fig11. SOA characteristics
I c M A X. ( P ulsed)
I c M A X. ( Continuous)
Single N on-re petitive
Pulse Tc= 25℃
Curves must be derated
linerarly with increase
In temperature
DC Oper at ion
1ms
100us
50us
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
0
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Fig 13. Power Dissipation vs. Case Temperature
Power Dis s ip a tion , PD[ W ]
Case T emper ature, T c [ ℃]Fig 14. Forward characteristics
Forwar d Drop Volt age, VF[V]
F orwa rd C urrent, IF[A]
TC=125℃
TC=25℃
TJ≤150℃
VGE ≥15V
Copyright @ Dawin Electronics Corp. A ll r ight reserved
DM2G200SH6N
Dec. 2008
DAWIN Electronics
D W
TM
DAWIN Electronics
D W
TM
Preliminary
P ackage Ou t L ine In for mati o n
7DM-2
Dimensions in mm
4±0.3
13±0.3
48±0.5
11±0.5
M5 DP 9
Φ6.4±0.2
4576
1
23
23±0.5 23±0.5
80±0.5
94±0.5
4±0.3
14.0±0.5 14.0±0.5 14.0±0.5
21.7±0.5
22.0+2 . 0
-0. 6
MAX 31
6.0±0. 5
17.0±0.5
91.5±0.5
LABEL PLATE
9.1±0.5
1.0±0.5
6.0±0.5
48.0±0.5
6.8±0.5
19.0±0.5
45.5±0.5
7/7
