Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching
applications.
•Collector–Emitter Saturation Voltage —
VCE(sat) = 1.5 Vdc (Max) @ IC
= 6.0 Adc
•Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42A
= 80 Vdc (Min) — TIP41B, TIP42B
= 100 Vdc (Min) — TIP41C, TIP42C
•High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC
= 500 mAdc
•Compact TO–220 AB Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
Î
Î
Î
ÎÎÎ
Symbol
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TIP41A
TIP42A
ÎÎÎ
Î
Î
Î
ÎÎÎ
TIP41B
TIP42B
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TIP41C
TIP42C
ÎÎÎ
Î
Î
Î
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
60
ÎÎÎ
ÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎ
ÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
60
ÎÎÎ
ÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
6
10
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation
@ TC = 25C
Derate above 25C
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
65
0.52
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation
@ TA = 25C
Derate above 25C
ÎÎÎ
Î
Î
Î
ÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
2.0
0.016
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Unclamped Inductive Load Energy (1)
ÎÎÎ
ÎÎÎ
E
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
62.5
ÎÎÎ
ÎÎÎ
mJ
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
Î
Î
Î
ÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJA
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
62.5
ÎÎÎ
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
C/W
(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 4 1Publication Order Number:
TIP41A/D
TIP41A
TIP41B
TIP41C
TIP42A
TIP42B
TIP42C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–80–100 VOLTS
65 WATTS
*ON Semiconductor Preferred Device
*
NPN
PNP
*
*
*
CASE 221A–09
TO–220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
123
4
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) TIP41A, TIP42A
(IC = 30 mAdc, IB = 0) TIP41B, TIP42B
TIP41C, TIP42C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
ÎÎÎ
60
80
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
—
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current TIP41A, TIP42A
(VCE = 30 Vdc, IB = 0) TIP41B, TIP41C
(VCE = 60 Vdc, IB = 0) TIP42B, TIP42C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
0.7
0.7
0.7
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0) TIP41A, TIP42A
(VCE = 80 Vdc, VEB = 0) TIP41B, TIP42B
(VCE = 100 Vdc, VEB = 0) TIP41C, TIP42C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICES
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
400
400
400
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
30
15
ÎÎÎÎ
ÎÎÎÎ
—
75
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
3.0
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎ
ÎÎÎ
—
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
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3
Figure 1. Power Derating
T, TEMPERATURE (°C)
0 100
0
20
160
40
60
60 80
40 140
80
Figure 2. Switching Time Test Circuit
0.06
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.4 6.0
0.07
1.0
4.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
t, TIME (s)µ
0.5
0.3
0.1
0.05
0.1 0.6 1.0
td @ VBE(off) ≈ 5.0 V
0.03
0.7
2.0
0.2 2.0
tr
20 120
PD, POWER DISSIPATION (WATTS)
TC
TC
0
1.0
2.0
3.0
4.0
TA
TA
+11 V
25 µs
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.2
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
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4
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZθJC(t) = r(t) RθJC
RθJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
P(pk)
t1t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 205.0 60 100
Figure 5. Active–Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
1.0ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
0.5ms
CURVES APPLY BELOW RATED VCEO
3.0
0.3
40 80
5.0ms
TJ = 150°C
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 4. A t high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 0.4 0.6 4.00.06 1.0 2.00.2
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
5.0
t, TIME (s)µ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0 1.0 3.0 5.0 200.5 102.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C, CAPACITANCE (pF)
200
100
70
50
30
30 50
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2 Cib
Cob
3.0
ts
tf
TJ = 25°C
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
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5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.3
101
100
10-2
102
10-1
10-3
10M
100k
10k
0.1k
1.0M
1.0k
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.1 0.2 0.4 6.00.06
100
70
50
30
10
7.0
0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VCE = 2.0 V
5.0 1.0 2.00.6
1.6
2.0
20 30 100 100010
0.8
0.4
50
0300 500200
25°C
TJ = 150°C
-55°C
1.2
2.0
0.06
IC, COLLECTOR CURRENT (AMP)
1.6
0.8
1.2
0.4
00.1 0.2 0.3 0.4 0.6 1.0
+2.5
IC = 1.0 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
2.5 A 5.0 A
2.0 3.0 4.0 6.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
*APPLIES FOR IC/IB ≤ hFE/4
*θVC FOR VCE(sat)
θVB FOR VBE
Figure 11. Temperature Coefficients
, COLLECTOR CURRENT (A)µIC
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 12. Collector Cut–Off Region Figure 13. Effects of Base–Emitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ≈ ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
200
20
4.0
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
+25°C to +150°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
+0.7
TJ = 25°C
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
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6
PACKAGE DIMENSIONS
CASE 221A–09
ISSUE AA
TO–220AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
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7
Notes
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
http://onsemi.com
8
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