MOTOROU
SEMICONDUCTOR TECHNICAL DATA Orderth18 document
by2N3WWD
o2N3634JTX, JTXV
2N3635JTX, JTXV, JANS
2N3636JTX, JTXV, JANS
2N3637JTX, JTXV, JANS
Processedper MIL+-19500/357
PNP Silicon
SmallSignal General-Purpose Transistor
o
140
175
140
175
Collector Current,Maimurn Ic .,*.O
..;,> 1.0 Ado
Device Dwiwtion pD ,,3:‘*4,:,,
@TA=25°C ..{s,i~\JF12::\,,, 1.0 1.0 WaM
Derate above 25°C ,,:s~$:.>+
,k:,~-,,+.~.$,~, 5.71 5.71 mW/OC
@TC=25°C ,’*,,t/,-i$r
.>,,*:F 5.0 5.0 Watts
.;;&$\+:<w.,”,\
Deratetive 25°C .!,,,$*,
a+.
.$.:,\.,‘$,*\ 28.8 28.8 mW/OC
‘~.,,.&$
“’:.t,:,,..s?,,
ELECTRICAL CHARACTERlST19&A~#*50C unlessothetise noted.)
Chamc*.,+8 ., ISymbol Mln M= Un[t
OFF CHARACTERISTICS ,~?>:ii>~.l++$
Ccllectcr+mitter BreMo~%~e(l) V(BR)CEO
(1C=10 mAdc) .it$:~
..: ,,.,, 2N3634, 2N3635
(IC =10 mAdc) ‘$$~:~’ 2N3636, 2N3637
,:.:,.
Emitter-ese B~@_ Voltage V(BR)CBO
(1C=100@&;’* 2N3634, 2N3635
(1C=lo&*)a$’ 2N3636, 2N3637
Emti*.$re*don Voltage V(BR)EBO
(l~~$~t~dc)
*&i Cutoff Current iCBO
*CB =100 Vdc)
WCB =100 Vdc, TA =1500C)
Emitter Cutoff Current .IEBO
WEB =3.0 Vdc)
ICollectorCutoff Current IICEO
~cE=
100Vdc)
5.0
+
Vdc
Vdc
IVdc
100 InAdo
100 @do
50
10 @dc
(continua
m(1) Pulsed. Pulse Wdth 250 to WO @, D@ @cle 1.0 to 2.0%.
RW O
9/93
@M-RO&A
@Motorola,Ino.19M
2N3634 THRU 2N3637 SERIES
lu~ llme(~&If) i%ff 600 Ins
(1)Pulsed.PulseWdth 250to 350W, DW @cle 1.0to 2.0%. (oontinued)
(2)NoiseFigureshallbe measuredusingamodel 31OBQuanTe* Laboratories test se$ or quivalent
COMMERCIAL PLUS AND MltiAERO SMALL SIGNAL TRANSISTOR DATA
a
2N3634 THRU 2N3467 SERIES
COMMERCIAL PLUS AND Ml~AERO SMALL SIGNAL TRANSISTOR DATA
3-73
2N3634 THRU 2N3637 SERIES
PACWGE DIMENSIONS
w&
RN 1. 30UROE
2SATE
3. DWN
(Usq
4.
..k;\i.~
,ei.
~\w
,\!.,*. ,:?) ...
.
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Literature DletdbuUM bntem
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@M-ROLA 1PHW4101 1-2 PRINTED IN USA WW MPWPOO CPTO YOACAA 2N3WTWD
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