PD - 91435C IRF7311 HEXFET(R) Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS(on) = 0.029 T o p V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage TA = 25C TA = 70C Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS VGS 20 12 6.6 5.3 26 2.5 2.0 1.3 100 4.1 0.20 5.0 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol Limit Units RJA 62.5 C/W 5/29/01 IRF7311 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 --- --- --- 0.7 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V V GS = 0V, ID = 250A 0.027 --- V/C Reference to 25C, ID = 1mA 0.023 0.029 VGS = 4.5V, ID = 6.0A 0.030 0.046 VGS = 2.7V, ID = 5.2A --- --- V VDS = V GS, ID = 250A 20 --- S V DS = 10V, ID = 6.0A --- 1.0 VDS = 16V, VGS = 0V A --- 5.0 VDS = 16V, VGS = 0V, TJ = 55C --- 100 VGS = 12V nA --- -100 VGS = -12V 18 27 ID = 6.0A 2.2 3.3 nC VDS = 10V 6.2 9.3 VGS = 4.5V, See Fig. 10 8.1 12 VDD = 10V 17 25 ID = 1.0A ns 38 57 RG = 6.0 31 47 R D = 10 900 --- VGS = 0V 430 --- pF VDS = 15V 200 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 2.5 --- --- 26 --- 0.72 --- 52 --- 58 1.0 77 86 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 12mH ISD 4.1A, di/dt 92A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. RG = 25, IAS = 4.1A. Surface mounted on 1 in square Cu board D S IRF7311 100 100 VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP TOP 10 1.50V 10 1.50V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 1 0.1 10 VDS , Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 1 1.5 20s PULSE WIDTH TJ = 150 C TJ = 150 C 10 TJ = 25 C V DS = 10V 20s PULSE WIDTH 2.0 2.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3.0 1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance () IRF7311 ID = 6.0A 1.5 1.0 0.5 VGS = 4.5V 0.0 -60 -40 -20 0 20 40 60 0.032 V G S = 2.7V 0.028 0.024 VG S = 4.5V 0.020 80 100 120 140 160 10 20 30 I D , Drain C urrent (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.05 300 0.04 0.03 I D = 6.6A 0.02 0.01 A 0 2 4 6 V G S , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 8 EAS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () A 0 TJ , Junction Temperature ( C) TOP 250 BOTTOM ID 1.8A 3.3A 4.1A 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 150 IRF7311 V GS C iss C rs s C iss C o ss = = = = 10 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 1200 C oss 800 C rss 400 0 A 1 10 ID = 6.0A VDS = 10V -VGS , Gate-to-Source Voltage (V) C , Capacitance (pF) 1600 100 8 6 4 2 0 0 5 10 15 20 25 30 QG , Total Gate Charge (nC) V D S , D rain-to-S ourc e V oltage (V ) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 P DM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7311 SO-8 Package Details D 8 6 7 6 MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC e1 A 5 H E 0.25 [.010] 1 6X 2 3 A 4 e e1 C .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MIN 5 A INCHES DIM B A1 8X L 8X c 7 C A B F OOT PRINT NOT ES : 1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS. MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INTERNAT IONAL RECTIFIER LOGO YWW XXXX F7101 DATE CODE (YWW) Y = LAS T DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER IRF7311 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 5/01