HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
5/29/01
SO-8
VDSS = 20V
RDS(on) = 0.029Ω
IRF7311
Description
Symbol Maximum Units
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS ± 12
TA = 25°C 6.6
TA = 70°C 5.3
Pulsed Drain Current IDM 26
Continuous Source Current (Diode Conduction) IS2.5
TA = 25°C 2.0
TA = 70°C 1. 3
Single Pulse Avalanche Energy EAS 100 mJ
Avalanche Current IAR 4.1 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-AmbientRθJA 62.5 °C/W
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
ID
PD
V
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
lGeneration V Technology
lUltra Low On-Resistance
lDual N-Channel MOSFET
lSurface Mount
lFully Avalanche Rated
PD - 91435C
IRF7311
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– 0.72 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time ––– 52 77 ns TJ = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge ––– 58 86 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 26
2.5 A
S
D
G
Surface mounted on 1 in square Cu board
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 12mH
RG = 25 Ω, IAS = 4.1A. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.023 0.029 VGS = 4.5V, ID = 6.0A
––– 0.030 0.046 VGS = 2.7V, ID = 5.2A
VGS(th) Gate Threshold Voltage 0. 7 ––– ––– V V DS = VGS, ID = 250µA
gfs Forward Transconductance ––– 20 ––– S V DS = 10V, ID = 6.0A
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 5.0 VDS = 16V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
QgTotal Gate Charge –– – 18 27 I D = 6.0A
Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.2 9.3 V GS = 4.5V, See Fig. 10
td(on) Turn-On Delay Time ––– 8.1 12 VDD = 10V
trRise Time ––– 17 25 ID = 1.0A
td(off) Turn-Off Delay Time ––– 38 57 RG = 6.0Ω
tfFall Time ––– 31 47 RD = 10Ω
Ciss Input Capacitance ––– 900 ––– VGS = 0V
Coss Output Capacitance ––– 430 ––– pF V DS = 15V
Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF7311
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1 1 10
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
0.1 1 10
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5 2.0 2.5 3.0
V = 10V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRF7311
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.8A
3.3A
4.1A
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
6.0A
0.01
0.02
0.03
0.04
0.05
02468
A
GS
V , Gate- t o -So urc e Vo lta
g
e
(
V
)
I = 6.6A
D
0.020
0.024
0.028
0.032
0 102030
A
I , Drain Current
(
A
)
D
V = 4.5V
GS
V = 2 .7V
GS
IRF7311
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
400
800
1200
1600
1 10 100
C , Capacitance (pF)
DS
V , Dr ain -to -So u rc e Vo lta
g
e
(
V
)
A
V = 0 V , f = 1 M Hz
C = C + C , C S HORT E D
C = C
C = C + C
GS
is s
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
0
2
4
6
8
10
Q , Total Gate Char
g
e (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D6.0A
V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7311
SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONFORMS T O JEDEC OUTLINE MS -012AA.
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
EX AMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
F7101
YWW
XXXX
PART NUMBER
LOT CODE
WW = WEEK
Y = LAST DIGIT OF THE YEAR
DATE CODE (Y WW)
IRF7311
33 0.00
(12.992)
MAX.
14.40 ( .5 66 )
12.40 ( .4 88 )
NOTES :
1. CONTRO LLING DIMEN SIO N : M ILLIMET ER .
2. OU TL IN E C O N FO R M S T O EIA-481 & EIA -541.
FEED DIRECTION
TERM INAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. C ONTRO LLING DIM ENSION : M ILLIM ETER.
2. ALL DIM ENSION S ARE SHOWN IN M ILLIM ETERS(INCHES).
3. OU TLIN E C ON FORM S TO EIA-4 81 & EIA-541.
SO-8 Tape and Reel
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 5/01
