SRA2211M Semiconductor PNP Silicon Transistor Descriptions * Switching application * Interface circuit and driver circuit application Features * * * * With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. Marking SRA2211M 2211 Package Code TO-92M Outline Dimensions unit : 4.00.1 Equivalent Circuit 3.00.1 0.44 REF mm C(OUT) 0.52 REF 14.00.40 B(IN) R1 R1 = 10K E(COMMON) 1.27 Typ. 2.54 0.1. 3.00.1 3.8 Min. 0.42 Typ. 0.7 Typ. 1 2 3 PIN Connections 1. Emitter 2. Collector 3. Base KSR-I018-000 1 SRA2211M Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Power Dissipation PD 400 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 150 C Electrical Characteristics Characteristic (Ta=25C) Symbol Test Condition Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -500 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -500 nA DC Current Gain hFE VCE=-5V, IC=-1mA 120 - - - IC=-10mA, IB=-0.5mA - -0.1 -0.3 V VCE=-10V, IC=-5mA - 250 - MHz - 10 - K Collector-Emitter Saturation Voltage VCE(SAT) * Transition Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-I018-000 2