SOT 223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - APRIL 1997
FEATURES
*V
CEO = 30V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 20 A
Continuous Collector Current IC5A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C † Ptot 2.5 W
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1049A
C
C
E
B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 80 130 V IC=100µA
Collector-Emitter
Breakdown Voltage VCES 80 130 V IC=100µA *
Collector-Emitter
Breakdown Voltage VCEO 30 40 V IC=10mA
Collector-Emitter
Breakdown Voltage VCEV 80 130 V IC=100µA, VEB=1V
Emitter-Base Breakdown
Voltage V(BR)EBO 59 VIE=100µA
Collector Cut-Off Current ICBO 0.3 10 nA VCB=35V
Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V
Collector Emitter Cut-Off
Current ICES 0.3 10 nA VCES=35V
Collector-Emitter
Saturation Voltage VCE(sat) 35
70
180
250
60
100
250
330
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=30mA*
IC=5A, IB=50mA*
Base-Emitter
Saturation Voltage VBE(sat) 950 1050 mV IC=5A, IB=50mA*
Base-Emitter Turn-On
Voltage VBE(on) 900 1000 mV IC=5A, VCE=2V*
Static Forward Current
Transfer Ratio hFE 280
300
300
180
40
440
450
450
280
80
1200
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=20A, VCE=2V*
Transition Frequency fT180 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo 45 60 pF VCB=10V, f=1MHz
Turn-on Time ton 125 ns IC=4A, IB=40mA, VCC=10V
Turn-off Time toff 380 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FZT1049A
FZT1049A
1m 100
1m 100
1m 100 100m 100
1001m
1m 100
IC - Collector Current (A)
VCE(sat) v IC
0
1.0
VCE(sat) - (V)
IC/IB=50
IC/IB=100
IC/IB=200
+25°C
-55°C
hFE - Typical Gain
700
350
+100°C
0
IC - Collector Current (A)
hFE v IC
+25°C
+100°C
VBE(on) - (V)
1.8
-55°C
0
IC- Collector Current (A)
VBE(on) v IC
+100°C
+150°C
VCE(sat) - (V)
1.0
+25°C
0
IC - Collector Current (A)
VCE(sat) v IC
+100°C
+150°C
VBE(sat) - (V)
1.5
+25°C
0
IC- Collector Current (A)
VBE(sat) v IC
1s
100ms
IC- Collector Current (A)
100
DC
100m
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100us
+150°C
VCE=2V
+25°C
-55°C
IC/IB=100
VCE=2V
-55°C
IC/IB=100
0.2
0.4
0.6
0.8
10m 100m 1 10
0.2
0.4
0.6
0.8
10m 100m 1 10
10m 100m 1 10
0.5
1.0
10m 100m 1 10
10m 100m 1 10
0.6
1.2
1
10
110
TYPICAL CHARACTERISTICS
