BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 5 -- 1 September 2015 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal 2-carrier W-CDMA [1] f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1805 to 1995 3400 28 95 19 28 33 [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz. 1.2 Features and benefits Decoupling leads to enable improved Video BandWidth (VBW) (120 MHz typical) High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Design optimized for gull-wing Excellent ruggedness Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1995 MHz frequency range BLF8G20LS-400P(G)V Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF8G20LS-400PV (SOT1242B) 1 drain1 2 drain2 3 gate1 4 gate2 6 1 2 7 1 6 8 3 [1] 5 source 6 decoupling1 7 decoupling2 8 n.c. 9 n.c. 5 8 3 4 9 5 4 9 7 2 aaa-007816 BLF8G20LS-400PGV (SOT1242C) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 6 decoupling1 7 decoupling2 8 n.c. 9 n.c. [1] 6 1 2 7 1 6 8 3 [1] 8 3 4 9 5 5 4 9 7 2 aaa-007816 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version - earless flanged ceramic package; 8 leads SOT1242B BLF8G20LS-400PGV - earless flanged ceramic package; 8 leads SOT1242C BLF8G20LS-400PV BLF8G20LS-400PV_LS-400PGV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 2 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C - 225 C junction temperature Tj [1] [1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF calculator. 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 80 W 0.23 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.0 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 300 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3.0 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 51.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 15 A - 20.6 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 10.5 A - 0.055 - Table 7. RF characteristics Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 1-64 DPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 3400 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit, tested on straight lead device. BLF8G20LS-400PV_LS-400PGV#5 Product data sheet Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL(AV) = 95 W 17.8 19 dB RLin input return loss PL(AV) = 95 W - 12 6 dB D drain efficiency PL(AV) = 95 W 24 28 % ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 95 W - 33 28 All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 - dBc (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 3 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 7. Test information 7.1 Ruggedness in class-AB operation The BLF8G20LS-400PV and BLF8G20LS-400PGV are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 3300 mA; 2-carrier W-CDMA signal; PL = 200 W; fc = 1800 MHz; 5 MHz spacing, 46 % clipping. 7.2 Impedance information Table 8. Typical impedance for the top-half of the push-pull package Measured load-pull data; IDq = 1800 mA; VDS = 28 V; Tcase = 25 C, water cooled. f ZS[1] ZL[1] (MHz) () () BLF8G20LS-400PV (straight lead) 1800 4.1 j4.66 4.1 j4.5 1840 5.2 j3.6 4.4 j4.4 1880 4.6 j1.45 4.85 j4.25 1930 2.8 j0.3 4.5 j4.3 1960 2.1 j0.5 5.5 j3.5 1990 1.56 j0.6 5.5 j3.4 BLF8G20LS-400PGV (gull-wing) 1800 3.7 j7.6 4.2 j6.8 1840 4.34 j6.1 4.4 j6.7 1880 4.75 j5.2 4 j6.4 1930 3.17 j3.4 4.6 j6.5 1960 2 j3.05 5.8 j5.5 1990 2.5 j2.6 5.8 j5.7 [1] ZS and ZL defined in Figure 1. drain ZL gate ZS 001aaf059 Fig 1. BLF8G20LS-400PV_LS-400PGV#5 Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 4 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 7.3 VBW in class-AB operation The BLF8G20LS-400PV and BLF8G20LS-400PGV have a video bandwidth of 120 MHz (typical) when measured in a class-AB test circuit operating in the 1800 MHz to 1880 MHz frequency band for VDS = 28 V and IDq = 3.3 A, where the VBW is defined as the location of the resonance in the base-band impedance measurement obtained using a low-frequency probe. The VBW measurement based on the 2-tone IMD test as a function of carrier spacing is shown below. aaa-007817 0 IMD (dBc) (2) (1) -20 IMD3 IMD5 -40 IMD7 (1) (2) (1) (2) -60 -80 1 10 carrier spacing (MHz) 102 (1) IMD low (2) IMD high Fig 2. BLF8G20LS-400PV_LS-400PGV#5 Product data sheet VBW capacity in a class-AB test circuit All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 5 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 7.4 Test circuit 50 mm 50 mm C22 C2 C3 C1 C14 C4 C24 R1 C15 C11 C9 60 mm R6 R3 C21 R4 C10 input C16 C13 C12 R5 output C19 R2 C5 C8 C6 C25 C7 C17 C20 C18 C23 aaa-007818 Printed-Circuit Board (PCB): Rogers 4350B; r = 3.66; thickness = 0.762 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 3. Component layout Table 9. List of components See Figure 3 for component layout. BLF8G20LS-400PV_LS-400PGV#5 Product data sheet Component Description Value Remarks C1, C5, C16, C20 multilayer ceramic chip capacitor 10 F, 50 V Murata, SMD 2220 C2, C6, C15, C19, C24, multilayer ceramic chip capacitor C25 4.7 F, 50 V Murata C3, C7, C14, C18 multilayer ceramic chip capacitor 1 nF ATC100B C4, C8, C9, C10, C13, C17, C21 multilayer ceramic chip capacitor 24 pF ATC100B C11, C12 multilayer ceramic chip capacitor 100 pF ATC100B C22, C23 electrolytic capacitor 2200 F, 63 V R1, R2 resistor 10 SMD 1206 R3, R5 resistor 5.1 SMD 1206 R4 resistor 33 SMD 1206 R6 resistor 100 SMD 1206 All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 6 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 7.5 Graphical data 7.5.1 Pulsed CW aaa-010585 21 Gp (dB) aaa-010586 60 D (%) 20 50 19 (3) (2) (1) 40 (1) (2) (3) 18 30 17 20 16 10 15 0 38 42 46 50 54 PL (dBm) 58 35 VDS = 28 V; IDq = 3400 mA; tp = 100 s; = 10 %. 39 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz (3) f = 1880 MHz Power gain as a function of output power; typical values BLF8G20LS-400PV_LS-400PGV#5 Product data sheet 47 51 55 PL (dBm) 59 VDS = 28 V; IDq = 3400 mA; tp = 100 s; = 10 %. (1) f = 1805 MHz Fig 4. 43 Fig 5. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 7 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 7.5.2 IS-95 aaa-010587 22 Gp (dB) aaa-010588 40 D (%) 21 (1) (2) (3) 30 (1) (2) (3) 20 20 19 10 18 0 39 41 43 45 47 49 51 PL (dBm) 53 39 VDS = 28 V; IDq = 3400 mA. 41 43 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz (3) f = 1880 MHz Power gain as a function of output power; typical values aaa-010589 -30 ACPR885k (dBc) 47 49 51 PL (dBm) 53 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz Fig 6. 45 Fig 7. Drain efficiency as a function of output power; typical values aaa-010590 -50 _ ACPR1980k (dBc) -55 -40 -60 -50 (1) (2) (3) -65 -70 -60 (1) (2) (3) -75 -70 -80 39 41 43 45 47 49 51 PL (dBm) 53 39 VDS = 28 V; IDq = 3400 mA. 41 43 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz Product data sheet 49 51 PL (dBm) 53 (3) f = 1880 MHz Adjacent channel power ratio (885 kHz) as a function of output power; typical values BLF8G20LS-400PV_LS-400PGV#5 47 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz Fig 8. 45 Fig 9. Adjacent channel power ratio (1980 kHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 8 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor aaa-010591 12 PAR (dB) aaa-010592 59 PL(M) (dBm) 57 10 55 (1) (2) (3) 8 53 (1) (2) (3) 6 51 4 49 39 41 43 45 47 49 51 PL (dBm) 53 39 VDS = 28 V; IDq = 3400 mA. 41 43 45 47 49 51 PL (dBm) 53 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz (3) f = 1880 MHz Fig 10. Peak-to-average ratio as a function of output power; typical values Fig 11. Peak output power as a function of output power; typical values 7.5.3 1-Carrier W-CDMA aaa-010593 22 Gp (dB) aaa-010594 50 D (%) 21 40 (1) 20 (1) (2) (3) 30 (2) 19 20 (3) 18 10 17 0 38 40 42 44 46 48 50 52 PL (dBm) 54 VDS = 28 V; IDq = 3400 mA. 39 41 43 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz 49 51 53 PL (dBm) 55 (3) f = 1880 MHz Fig 12. Power gain as a function of output power; typical values Product data sheet 47 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz BLF8G20LS-400PV_LS-400PGV#5 45 Fig 13. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 9 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor aaa-010595 10 PAR (dB) aaa-010596 30 RLin (dB) 8 26 6 22 (1) (2) (3) 4 (2) 18 (3) 2 14 (1) 0 10 39 41 43 45 47 49 51 53 PL (dBm) 55 39 VDS = 28 V; IDq = 3400 mA. 41 43 45 47 49 51 53 PL (dBm) 55 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz (3) f = 1880 MHz Fig 14. Peak-to-average ratio as a function of output power; typical values Fig 15. Input return loss as a function of output power; typical values 7.5.4 2-Carrier W-CDMA aaa-010597 22 Gp (dB) aaa-010598 50 D (%) 40 21 30 (1) (2) (3) 20 (1) (2) (3) 20 19 10 18 0 39 41 43 45 47 49 51 53 PL (dBm) 55 VDS = 28 V; IDq = 3400 mA. 39 41 43 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz 49 51 53 PL (dBm) 55 (3) f = 1880 MHz Fig 16. Power gain as a function of output power; typical values Product data sheet 47 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz BLF8G20LS-400PV_LS-400PGV#5 45 Fig 17. Drain efficiency as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 10 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor aaa-010599 30 RLin (dB) 25 20 (2) (3) 15 (1) 10 39 41 43 45 47 49 51 53 PL (dBm) 55 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz (2) f = 1840 MHz (3) f = 1880 MHz Fig 18. Input return loss as a function of output power; typical values aaa-010600 -20 ACPR5M (dBc) aaa-010601 -20 ACPR10M (dBc) -30 -30 -40 (1) (2) (3) -40 (1) (2) (3) -50 -50 -60 -60 39 41 43 45 47 49 51 53 PL (dBm) 55 VDS = 28 V; IDq = 3400 mA. 39 41 43 (1) f = 1805 MHz (2) f = 1840 MHz (2) f = 1840 MHz (3) f = 1880 MHz (3) f = 1880 MHz Fig 19. Adjacent channel power ratio (5 MHz) as a function of output power; typical values Product data sheet 47 49 51 53 PL (dBm) 55 VDS = 28 V; IDq = 3400 mA. (1) f = 1805 MHz BLF8G20LS-400PV_LS-400PGV#5 45 Fig 20. Adjacent channel power ratio (10 MHz) as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 11 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 8. Package outline Earless flanged ceramic package; 8 leads SOT1242B D A F 5 D1 v A U1 6 c B 1 2 7 y H U2 E1 E A 8 3 4 b1 b 9 w2 Q B e e1 0 5 10 mm scale Dimensions Unit(1) mm max nom min A b b1 c 5.5 1.41 11.81 0.18 D D1 e e1 31.55 31.52 E E1 F H Q(2) 9.50 9.53 1.75 19.94 2.26 32.39 10.29 9.30 9.27 1.50 18.92 2.01 32.13 10.03 U1 U2 v w2 y 0.25 0.25 0.10 13.72 29.47 4.2 1.14 11.56 0.10 30.94 30.96 max 0.217 0.055 0.465 0.007 1.242 1.241 0.540 inches nom min 0.165 0.045 0.455 0.004 0.218 1.219 0.374 0.375 0.069 0.785 0.089 1.275 0.405 0.010 0.366 0.365 0.059 0.745 0.079 1.265 0.395 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from the body. Outline version References IEC JEDEC 0.010 0.004 1.16 JEITA sot1242b_po European projection Issue date 12-11-28 15-07-21 SOT1242B Fig 21. Package outline SOT1242B BLF8G20LS-400PV_LS-400PGV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 12 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor Earless flanged ceramic package; 8 leads SOT1242C 0.3 mm gauge plane D Lp F A 5 D1 y Q detail X v A U1 B c X 6 H 1 2 7 E1 U2 8 A 3 4 9 b1 b E w2 B e 7 e1 0 5 0 7 10 mm scale 0 Dimensions Unit(1) mm max nom min A b b1 c 5.5 1.41 11.81 0.18 D D1 e e1 31.55 31.52 E E1 F H 9.50 9.53 1.75 14.70 1.38 0.195 32.39 10.29 0.25 0.25 0.15 9.30 9.27 1.50 14.50 0.98 0.045 32.13 10.03 Lp Q U1 U2 v w2 y 13.72 29.47 4.2 max 0.217 inches nom min 0.165 1.14 11.56 0.10 0.055 0.465 0.007 1.242 1.241 0.045 0.455 0.004 1.218 1.219 30.94 30.96 0.374 0.375 0.069 0.579 0.055 0.008 1.275 0.405 0.01 0.01 0.006 0.540 1.16 0.366 0.365 0.059 0.571 0.039 0.002 1.265 0.395 Note 1. Millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot1242c_po European projection Issue date 12-05-15 12-05-30 SOT1242C Fig 22. Package outline SOT1242C BLF8G20LS-400PV_LS-400PGV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 13 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description 3GPP 3rd Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical Channel ESD ElectroStatic Discharge IMD InterModulation Distortion IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal Oxide Semiconductor MTF Median Time to Failure PAR Peak-to-Average Ratio SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLF8G20LS-400PV_LS-400PGV#5 20150901 Product data sheet Modifications: Change notice Supersedes BLF8G20LS-400PV _LS-400PGV v.4 * The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. * Legal texts have been adapted to the new company name where appropriate. BLF8G20LS-400PV_LS-400PGV v.4 20150728 Product data sheet - BLF8G20LS-400PV _LS-400PGV v.3 BLF8G20LS-400PV_LS-400PGV v.3 20140603 Product data sheet - BLF8G20LS-400PV _LS-400PGV v.2 BLF8G20LS-400PV_LS-400PGV v.2 20130625 Product data sheet - BLF8G20LS-400PV _LS-400PGV v.1 BLF8G20LS-400PV_LS-400PGV v.1 20130606 Preliminary data sheet - - BLF8G20LS-400PV_LS-400PGV#5 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 14 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes -- Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF8G20LS-400PV_LS-400PGV#5 Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the Ampleon product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). Ampleon does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 15 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon' standard warranty and Ampleon' product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own trademarks. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13. Contact information For more information, please visit: http://www.ampleon.com BLF8G20LS-400PV_LS-400PGV#5 Product data sheet For sales office addresses, please visit: http://www.ampleon.com/sales All information provided in this document is subject to legal disclaimers. Rev. 5 -- 1 September 2015 (c) Ampleon The Netherlands B.V. 2015. All rights reserved. 16 of 17 BLF8G20LS-400P(G)V Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.5.1 7.5.2 7.5.3 7.5.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 VBW in class-AB operation . . . . . . . . . . . . . . . 5 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 IS-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 9 2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Handling information. . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF8G20LS-400PV_LS-400PGV#5