DS3628 - 1.3 SL3227 3GHz NPN TRANSISTOR ARRAYS The SL3227 is a monolithic array of the five high frequency low current NPN transistors in a 16 lead DIL package. The transistors exhibit typical fT of 3GHz and wideband noise figures of 2dB. The SL3227 is pin compatible with the CA3127 and SL3127. FEATURES fT Typically 3GHz Wideband Noise Figure 2.0dB VBE Matching Better Than 5mV MP16 APPLICATIONS Wide Band Amplifiers PCM Regenerators High Speed Interface Circuits High Performance Instrumentation Amplifiers High Speed Modems Fig.1 Pin connections - SL3227 ABSOLUTE MAXIMUM RATINGS ORDERING INFORMATION The absolute maximum ratings are limiting values above which operating life may be shortened or specified parameters may be degraded. All electrical ratings apply to individual transistors. Thermal ratings apply to the total package. The isolation pin (substrate) must be connected to the most negative voltage applied to the package to maintain electrical isolation. VCB = 10 volt VEB = 2.5 volt VCE = 6 volt VCI = 15volt IC = 20 mA Maximum individual transistor dissipation 200 mWatt Storage temperature -55C to +150C Max junction temperature +150C Package thermal resistance (C/watt) SL3227 NA MP Package Type Chip to case Chip to ambient MP16 111 41 NOTE:If all the power is being dissipated in one transistor, these thermal resistance figures should be increased by 100C/watt Fig.2 Transition frequency (fT) v. collector current (VCB= 2V, f=200MHz) SL3227 ELECTRICAL CHARACTERISTICS These characteristics are guaranteed over the following test conditions (unless otherwise stated) Tamb = 22C 2C Static Characteristics Characteristic Collector base breakdown Collector isolation breakdown Base emitter breakdown Collector emitter breakdown Collector emitter saturation voltage Base emitter voltage Base emitter voltage difference, all transistors Input offset current Temperature coefficient of VBE Symbol BVCBO BVCIO BVEBO LVCEO VCE(SAT) VBE VBE Static forward current ratio IB VBE T Hfe Emitter base leakage Collector base leakage Collector isolation leakage Emitter base capacitance Collector base capacitance Collector isolation capacitance IEBO ICBO ICIO CEB CCB CCI Value Min. Typ. 10 16 2.5 6 20 40 5.0 9 0.22 0.78 0.45 0.73 0.2 -1.69 35 35 40 80 95 85 15 5 5 0.7 0.4 1.5 Units Max. V V V V V V mV IC = 10A IC = 10A IE = 10A IC = 5mA IC = 10mA, IB = 1mA VCE = 2V, IC = 1mA VCE = 2V, IC = 1mA A mV/C VCE = 2V, IC = 1mA VCE = 2V, IC = 1mA 0.5 0.81 5.0 3 Conditions 2.0 nA pA pA pF pF pF VCE = 2V, IC = 5mA VCE = 2V, IC = 0.1mA VCE = 2V, IC = 1mA VEB = 2V VCB = 10V VCI = 16V VEB = 0V VCI = 0V VCI = 0V Dynamic Characteristics Characteristic Transition frequency Wideband noise figure Knee of NF noise curve HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire SN2 2QW, United Kingdom. Tel: (0793) 518000 Fax: (0793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017, United States of America. Tel: (408) 438 2900 Fax: (408) 438 5576 Symbol fT NF Value Min. Typ. Max. 3 2.0 1 Units GHz dB KHz Conditions VCE = 2V, IC = 5mA f = 60MHz VCC = 6V IC = 1mA RS = 1k CUSTOMER SERVICE CENTRES * FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax : (1) 64 46 06 07 * GERMANY Munich Tel: (089) 3609 06-0 Fax : (089) 3609 06-55 * ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993 * JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510 * NORTH AMERICA Scotts Valley, USA Tel (408) 438 2900 Fax: (408) 438 7023. * SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872 * SWEDEN Stockholm, Tel: 46 8 702 97 70 Fax: 46 8 640 47 36 * UK, EIRE, DENMARK, FINLAND & NORWAY Swindon Tel: (0793) 518510 Fax : (0793) 518582 These are supported by Agents and Distributors in major countries world-wide. 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