SL3227
3GHz NPN TRANSISTOR ARRAYS
The SL3227 is a monolithic array of the five high frequency
low current NPN transistors in a 16 lead DIL package. The
transistors exhibit typical fT of 3GHz and wideband noise
figures of 2dB. The SL3227 is pin compatible with the CA3127
and SL3127.
FEATURES
■fT Typically 3GHz
■Wideband Noise Figure 2.0dB
■VBE Matching Better Than 5mV
APPLICATIONS
■Wide Band Amplifiers
■PCM Regenerators
■High Speed Interface Circuits
■High Performance Instrumentation Amplifiers
■High Speed Modems
ABSOLUTE MAXIMUM RATINGS
The absolute maximum ratings are limiting values above
which operating life may be shortened or specified parameters
may be degraded.
All electrical ratings apply to individual transistors. Thermal
ratings apply to the total package.
The isolation pin (substrate) must be connected to the most
negative voltage applied to the package to maintain electrical
isolation.
VCB = 10 volt
VEB = 2.5 volt
VCE = 6 volt
VCI = 15volt
IC = 20 mA
Maximum individual transistor dissipation 200 mWatt
Storage temperature -55°C to +150°C
Max junction temperature +150°C
Package thermal resistance (°C/watt)
Package Type MP16
Chip to case 111
Chip to ambient 41
NOTE:If all the power is being dissipated in one transistor,
these thermal resistance figures should be increased by
100°C/watt
Fig.1 Pin connections - SL3227
ORDERING INFORMATION
SL3227 NA MP
Fig.2 Transition frequency (f
T
) v. collector current
(V
CB
= 2V, f=200MHz)
DS3628 - 1.3
MP16
SL3227
ELECTRICAL CHARACTERISTICS
These characteristics are guaranteed over the following test conditions (unless otherwise stated)
Tamb = 22°C ± 2°C
Value Units Conditions
Min. Typ. Max.
Symbol
Collector base breakdown
Collector isolation breakdown
Base emitter breakdown
Collector emitter breakdown
Collector emitter saturation voltage
Base emitter voltage
Base emitter voltage difference,
all transistors
Input offset current
Temperature coefficient of VBE
Static forward current ratio
Emitter base leakage
Collector base leakage
Collector isolation leakage
Emitter base capacitance
Collector base capacitance
Collector isolation capacitance
Characteristic
BVCBO
BVCIO
BVEBO
LVCEO
VCE(SAT)
VBE
∆VBE
∆IB
∆VBE
T
Hfe
IEBO
ICBO
ICIO
CEB
CCB
CCI
10
16
2.5
6
0.73
35
35
40
20
40
5.0
9
0.22
0.78
0.45
0.2
-1.69
80
95
85
15
5
5
0.7
0.4
1.5
0.5
0.81
5.0
3
2.0
V
V
V
V
V
V
mV
µA
mV/°C
nA
pA
pA
pF
pF
pF
IC = 10µA
IC = 10µA
IE = 10µA
IC = 5mA
IC = 10mA, IB = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 1mA
VCE = 2V, IC = 5mA
VCE = 2V, IC = 0.1mA
VCE = 2V, IC = 1mA
VEB = 2V
VCB = 10V
VCI = 16V
VEB = 0V
VCI = 0V
VCI = 0V
Static Characteristics
Value Units Conditions
Min. Typ. Max.
Symbol
Transition frequency
Wideband noise figure
Knee of NF noise curve
Characteristic
fT
NF
3
2.0
1
GHz
dB
KHz
VCE = 2V, IC = 5mA
f = 60MHz VCC = 6V
IC = 1mA
RS = 1kΩ
Dynamic Characteristics
HEADQUARTERS OPERATIONS
GEC PLESSEY SEMICONDUCTORS
Cheney Manor, Swindon,
Wiltshire SN2 2QW, United Kingdom.
Tel: (0793) 518000
Fax: (0793) 518411
GEC PLESSEY SEMICONDUCTORS
P.O. Box 660017
1500 Green Hills Road,
Scotts Valley, California 95067-0017,
United States of America.
Tel: (408) 438 2900
Fax: (408) 438 5576
CUSTOMER SERVICE CENTRES
• FRANCE & BENELUX Les Ulis Cedex Tel: (1) 64 46 23 45 Fax : (1) 64 46 06 07
• GERMANY Munich Tel: (089) 3609 06-0 Fax : (089) 3609 06-55
• ITALY Milan Tel: (02) 66040867 Fax: (02) 66040993
• JAPAN Tokyo Tel: (03) 5276-5501 Fax: (03) 5276-5510
• NORTH AMERICA Scotts Valley, USA Tel (408) 438 2900 Fax: (408) 438 7023.
• SOUTH EAST ASIA Singapore Tel: (65) 3827708 Fax: (65) 3828872
• SWEDEN Stockholm, Tel: 46 8 702 97 70 Fax: 46 8 640 47 36
• UK, EIRE, DENMARK, FINLAND & NORWAY
Swindon Tel: (0793) 518510 Fax : (0793) 518582
These are supported by Agents and Distributors in major countries world-wide.
© GEC Plessey Semiconductors 1994
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior knowledge the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute
any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information
and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
www.zarlink.com
Information relating to products and services furnished herein by Zarlink Semiconductor Inc. trading as Zarlink Semiconductor or its subsidiaries (collectively
“
Zarlink
”
)
is believed to be reliable. However, Zarlink assumes no liability for errors that may appear in this publication, or for liability otherwise arising from the application or
use of any such information, product or service or for any infringement of patents or other intellectual property rights owned by third parties which may result from
such application or use. Neither the supply of such information or purchase of product or service conveys any license, either express or implied, under patents or
other intellectual property rights owned by Zarlink or licensed from third parties by Zarlink, whatsoever. Purchasers of products are also hereby notified that the use
of product in certain ways or in combination with Zarlink, or non-Zarlink furnished goods or services may infringe patents or other intellectual property rights owned
by Zarlink.
This publication is issued to provide information only and (unless agreed by Zarlink in writing) may not be used, applied or reproduced for any purpose nor form part
of any order or contract nor to be regarded as a representation relating to the products or services concerned. The products, their specifications, services and other
information appearing in this publication are subject to change by Zarlink without notice. No warranty or guarantee express or implied is made regarding the capability,
performance or suitability of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user
’
s responsibility to fully determine the performance and suitability of any
equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. Manufacturing does not necessarily
include testing of all functions or parameters. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to Zarlink
’
s conditions of sale which are available on request.
Purchase of Zarlink s I
2
C components conveys a licence under the Philips I
2
C Patent rights to use these components in and I
2
C System, provided
that the system conforms to the I
2
C Standard Specification as defined by Philips.
Zarlink and the Zarlink Semiconductor logo are trademarks of Zarlink Semiconductor Inc.
Copyright 2001, Zarlink Semiconductor Inc. All Rights Reserved.
TECHNICAL DOCUMENTATION - NOT FOR RESALE
For more information about all Zarlink products
visit our Web Site at
