2H5943 1 NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed specifically for broadband applications requiring low cross-modulation distortion and low-noise figure. Characterized for use in CATV applications. e Low Noise Figure- @f = 200 MHz r 1-- A+ STYLE . 1 PIN 1. EMITTEfl 2. BASE 3. COLLECTOH MILLIMETERS OIM ,,* :1~'$ IU, J, ,0 A a c 0 E F G H J K L M P Q ,"(,g L2 = 5 turns #18 wire lIV 10, 51W long, tapped 1.3/4 turns from cOllectOr T ~~ ~oool,, VE R MIN `MIN 8.89 9.40 8.00 8.51 6.10 6.80 0,406 0.533 0.229 3.18 0,406 0.483 4,83 5.33 0.711 0.864 0.737 1.02 12.70 8.35 450 NOM 1.27 900 joM 2.54 I All JEOEC All capacitors in pF unless otherwise noted. INCHES MAX 900 - dimensions MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.018 0.021 0.009 0.125 0.016 0.0 I 9 0.190 0,210. 0.028 0.034 0.029 0.040 0.500 0,250 450 NOM I 0.050 . 0.1001 ,. NOM - and notes applv. CASE 79-02 TO-39 1, MOTOROLA INC., 1974 DS 5414 R1 *ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise Characteristic 3FF CHARACTERISTICS DYNAMIC - 8andwidth Product (Figure 2) VCE = 15 Vdc, f = 200 MHz) ,$ ,,'..;.. .,'., ,~.,). * `,?*> \ Collector-Base Capacitance (Figure 5) +$pt>*\:~. ~t<;$: ,\\,, * 3.,..J.\ [vCB=30vdC, lE=O, f=100kHz) .~.wi., ,Sy , `~:):t, ~,. x;~i):i>*!$!2, Efitter-Base Capacitance (Figure 5) i ,s,. .3*'{;>J*, ,>$ ,<, (VEB= 0.5 Vdc, Ic= O, f= 100kHz) ,,~..,.\.\:J, ~.,.... ,,,.. . . ~~. t,,, -..+\ \., Small-Signal Current Gain `.3. "a (Ic = 50 mAdc, VCE = 15 Vdc, f = l.~f%<~$f 100mAdc, $/,::;,.,..t.:j s,. j ,,,,`* fT ..,., .,#'t. " Time Constant Ccb Unit VCE,i~$~I~@, 1200 1550 1000 1425 2400 -- 1.0 1.6 2.5 pF 8.4 15 pF 350 -- 5.5 20 ps 3.4 -- -- 6.8 8.0 / hfe 25 rb'cc 2.0 .!:, .w~~i$y (1c = 30 rnAdc, VCE = ,$SVdc?#= 1350 Ceb (lE = 50 mAdc, VC6 = 15 Vdc,,f'$t<l,~ MHz) .,*.,:t .<.,..+. \$,:.i . . Noise Figure +~:., y (Ic = 35 mAdc, Max MHz 1QOO VCE = 15 Vdc, f = 200 MHz) +:.,. Collector-Base Typ . :$., ~,.~.!' .~$.`~,.',.~,.. ,. 25 rnAdc, VCE = 15 Vdc, f = 200 MHz) (kc = 50mAdc, flc= Min Symbol ` CHARACTERISTICS Current-Gain (IC= I noted) 200 MHz) f = 200 MHz) NF (Figure dB 1) (Figures 6, 11, 14) (1) *... . ?. Common-E (lc= mitt&~ ~~~h%er 10w*~~t#cE (IC = ~O%Aq, *t*'<.,. lnter*,@f~jen (~~t$,r~ Power Gain" = 15 Vdc, f= VCE = 15 Vdc, f = 250 MHz) Distortion (Ic = 50 mAdc, Distortion (Fi&re 1) -- 11.4 -- (Figure 6) 7,0 7.6 -- -- -- -50 -- -67 -45 -- (Figure 7) IM mAdc, VCE = 15 Vdc, Vout = t50 Cros~@odulation (Figure dB GPe 200 MHz) 8) XM dB VCE = 15 Vdc, Vout = +40 dBmV) (1c = 50 mAdc, VCE = 15 Vdc, Vout = +50 dBmV) I 1 (1) Indicates JE DEC Regifiered 1 Data. Includes noise figure of post-amplifier MOTOROLA dB dBmV) and matching pad. Semiconductor Products I I -42 I I .,. ., FIGURE 0.1 0.05 2 -CURRENT-GAIN , , , I I I I I I / - BANDWIDTH - PRODUCT FIGURE 3 - COLLECTOR-BASE. ... I I 2TURNS AWG #26,5/3T'I.D. l~HMOLDEOCHOKE 5TURNS AWG #26,3/32'1,0. FERRITE CHOKE,3TURNS#300N STACKPOLE 57-0156BEAD 2 TU RNS AWG #26,3/32"I.D. T.U.T. ,T L2 1 y R2 C4 AwG #30TRIFILAR WOUND 1-9.9 ON STACKPOLE 57.0985, #11TOROIO -- C2T = CONSTANT / ,~i, I TIME R3 h = P Ic' n VEE Vcc " R1 R2 R3 270OHMS 18OHMS 150OHMS GARI.OCKTEFLON SOCKET FIGURE 7- CROSS-MODULATION COLLECTOR "DISTORTION versus FIGURE CURRENT -30 8 - CROSS-MODULATION DISTORTION ,, versus OUTPUT LEVEL 0 VCE= 15 Vdc Output Level= t 40 dBmv Channel 13 -40 -- .= ~ -10 -- z 0 c -20 VCE = 15Vdc Channel 13 I .~-,': .,\\ I -50 \ ~60 - \ ~ -70 _ -80 I 25 30 40 50 60 70 I 1 75 I I "" .- Ic, COLLECTOR CURRENT (mAdc) FIGURE 9 - NARROWBAND NOISE COLLECTOR 10 8.0 : 7.0 ~ 6.0 : ~ ~ z uz 5.0 versus . I f=105MHz 9.0 -- FIGURE CURRENT / ` Rs = 250 Q, VCE = 6,0 TO 20 Vdc / / ` 4.0 3.0 2.0 1.0 ,, 0 01 O2O3O4O5O ,#%$@i;.*i$o 80 `o 0 100 10 20 30 40 Ic, COLLECTOR FIGURE 50 60 CURRENT 12 - NARROWBAND 70 80 90 100 (mAdc) NOISE FIGURE versus FREQUENCY 8.0 7.0 -- - Rs= 50 Ohms vcE = 6.0 to 20 Vdc 6.0 IC = 70'mAdc 5.0 ` 4,0 -- --- '50 mAdc -- -- -- 3.0 -- 2.0 -- I I I I I I I 25 30 35 40 45 50 55 Ic, COLLECTOR CURRENT MOTOROLA -. -- 1.0 4,0 20 - 60 0 50 70 (mAdc) Sekicon,ductor 100 200 f, FREQUENCY Products' Inc. @ (MHz) 300 500 ,= > \ 0 $ \ es., 10- \ . -lo _ / 0 200 100 500 300 700 1000 0 10 20 i\~y:~\$ `*O 50 GO 70 80 90 100 f, FREQUENCY (MHz) ,,.,... ,.*/.$ .,t~>, FIGURE 15 - REVERSE TRANSFER ,3,.\ ..: ~ ?is.: FIG~W,~l#~ ~:~. *:,>$P- ADMITTANCE Versus FREQUENCY REVERSE TRANSFER COLLECTOR ADMITTANCE versus CURRENT Ic, COLLECTOR CURRENT (mAdc) FIGURE 18 - FORWARD TRANSFER COLLECTOR % 250 z -- g ~ ADMITTANCE CURRENT 1 I VCE= 15Vdc f=200 MHz versus , 1 -bfe 7nn H 100 200 300 m 100 51 a L & % 700 1000 MOTOROLA I I I I I I I I 10 20 30 40 50 60 70 80 90 o 0 Ic, COLLECTOR CURRENT (mAdc) f, FREQUENCY(MHz) Cm I Semiconductor Producfs Inc. 100 , ,' ,, FIGURE FIGURE 19 - OUTPUT ADMITTANCE FREQUENCY versus 45 -- 2 & w v 2 $ vcE = 15 Vdc IC = 50 mAdc 40 35 30 / 25 0 a 20 b. ~ / ` $ 5 0 : / 15 10 / ~ 5.0 ` 0/ 100 9oe I 200 300 f, Frequency FIGURE ` // - 21 - INPUT REFLECTION FREQUENCY MOTOROLA 500 700 (MHz) COEFFICIENT versus ADMITTANCE CURRENT 50 ~ 20 - OUTPUT 1000 versus COLLECTOR { FIGURE 23 - REVERSE COEFFICIENT TRANSMISSION FIGURE versus FREQUENCY 24 - FORWARD TRANSMISSION versus FREQUENCY \, ,.,:.. , . ?1. ..,2%:,, FIGURE 25 - INPUT REF~C*ON .+~~&~$lCIENT MOTOROLA @ COEFFICIENT AND OUTPUT iEFLEcTiON versus FREQUENCY Semiconductor Products Inc. COEFFICIENT ,, ,, , MOTOROLA -@ Printed in SwitzeQa"a SemHcon#wctor' Prodwcts Inc. --