2H5943
NPN SILICON HIGH-FREQUENCY TRANSISTOR
. . . designed specifically for broadband applications requiring low
cross-modulation distortion and low-noise figure. Characterized for
use in CATV applications.
eLow Noise Figure– @f =200 MHz r
1
,,* IU, J, ,0 ,“(,g
L2 =5turns #18 wire
1— A+
STYLE 1.
PIN 1. EMITTEfl
2. BASE
3. COLLECTOH
MILLIMETERS INCHES
OIM MIN MAX ‘MIN MAX
A8.89 9.40 0.350 0.370
a8.00 8.51 0.315 0.335 ,.
c6.10 6.80 0.240 0.260
00,406 0.533 0.018 0.021
E0.229 3.18 0.009 0.125
F0,406 0.483 0.016 0.0 I9
G4,83 5.33 0.190 0,210.
H0.711 0.864 0.028 0.034
J0.737 1.02 0.029 0.040
K12.70 -0.500 -
L8.35 -0,250 -
M450 NOM 450 NOM
P-1.27 -I0.050 .
Q900 joM 900 NOM
R2.54 I–0.1001 -
All JEOEC dimensions and notes applv.
CASE 79-02
TO-39
1,
T~~lIV 10, 51W long,
:1~’$ ~oool,,
tapped 1.3/4 turns
from cOllectOr
All capacitors in pF
VE unless otherwise noted.
MOTOROLA INC., 1974 DS 5414 R1
*ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic ISymbol Min Typ Max Unit
3FF CHARACTERISTICS ‘
DYNAMIC CHARACTERISTICS .
:$., ~,.~.!’
.~$.‘~,.’,.~,..,.
Current-Gain –8andwidth Product (Figure 2) $/,::;,.,..t.:j
j,,,,‘* fT
(IC= 25 rnAdc, VCE =15 Vdc, f=200 MHz) s,. MHz
..,., 1QOO 1350
(kc =50mAdc, VCE =15 Vdc, f=200 MHz) .,#’t.
,$ “1200 1550 2400
flc= 100mAdc, VCE =15 Vdc, f=200 MHz) ,,’..;..
,~.,). 1000 1425 —
.,’., *
Collector-Base Capacitance (Figure 5) ‘,?*>\
+$pt>*\:~. Ccb 1.0 1.6 2.5
[vCB=30vdC, lE=O, f=100kHz) ~t<;$:
*3. pF
,\\,, ,..J.\
.~.wi.,,Sy ,
Efitter-Base Capacitance (Figure 5) ‘~:):t,~,.
x;~i):i> Ceb 8.4*!$!2,
(VEB= 0.5 Vdc, Ic= O, f= 100kHz) 15
i,s,.
.3*’{;>J*,,>$ ,<, pF
,,~..,.\.\:J,~.,.... /
,,,.. .. ~~.
Small-Signal Current Gain t,,, -..+\ \.,
‘.3. “a hfe 25
(Ic =50 mAdc, VCE =15 Vdc, f=l.~f%<~$f 350 —
+:.,. .!:,
Collector-Base Time Constant .w~~i$y rb’cc 2.0 5.5 20
(lE =50 mAdc, VC6 =15 Vdc,,f’$t<l,~ MHz) ps
.,*.,:t.<.,..+.
Noise Figure \$,:.i . .
+~:., yNF dB
(1c =30 rnAdc, VCE =,$SVdc?#= 200 MHz) (Figure 1)
(Ic =35 mAdc, VCE,i~$~I~@, f=200 MHz) (Figures 6, 11, 14) (1) 3.4 —
—6.8 8.0
*....?.
Common-E mitt&~ ~~~h%er Power Gain”
(lc= 10w*~~t#cE =15 Vdc, f= 200 MHz) (Fi&re 1) GPe dB
—11.4
(IC =~O%Aq, VCE =15 Vdc, f=250 MHz) (Figure 6)
—
*t*’<.,.7,0 7.6 —
lnter*,@f~jen Distortion (Figure 7) IM
(~~t$,r~ mAdc, VCE =15 Vdc, Vout =t50 dBmV) ——-50 dB
Cros~@odulation Distortion (Figure 8) XM
(Ic =50 mAdc, VCE =15 Vdc, Vout =+40 dBmV) dB
(1c =50 mAdc, VCE =15 Vdc, Vout =+50 dBmV) —-67 —
-45 -42
1I1I I I I
●Indicates JE DEC Regifiered Data.
(1) Includes noise figure of post-amplifier and matching pad.
MOTOROLA Semiconductor Products
.,.
.,
FIGURE 2–CURRENT-GAIN –BANDWIDTH PRODUCT FIGURE 3 – COLLECTOR-BASE. TIME CONSTANT
0.1 /
, , , /-
I I I
0.05 I I I ,~i, ... I I
,T
T.U.T.
L2 R2
1
IC4
—
yh
R3 =
C2T VEE
=P“R1
Ic’
R2
R3
n
Vcc GARI
2TURNS AWG #26,5/3T’I.D.
l~HMOLDEOCHOKE
5TURNS AWG #26,3/32’1,0.
FERRITE CHOKE,3TURNS#300N
STACKPOLE 57-0156BEAD
2TU RNS AWG #26,3/32”I.D.
AwG #30TRIFILARWOUND 1-9.9ON
STACKPOLE 57.0985,#11TOROIO
270OHMS
18OHMS
150OHMS
.OCKTEFLON SOCKET
FIGURE 7- CROSS-MODULATION “DISTORTION versus
COLLECTOR CURRENT
-30
VCE= 15Vdc
-40 —Output Level=t40 dBmv
Channel13
-50
~60-\
\
-70 ~_
-8025 30 40 50 60 70 75
Ic, COLLECTORCURRENT(mAdc)
FIGURE 9 – NARROWBAND NOISE FIGURE versus
COLLECTOR CURRENT
10 I./
9.0 —f=105MHz
8.0 ‘Rs =250 Q, VCE =6,0 TO 20 Vdc
:7.0 /
~6.0
/‘
:5.0
~
~4.0 -
z
u- 3.0
z
2.0
1.0
0,,
01 O2O3O4O5O ,#%$@i;.*i$o 80 ‘o 100
IIII I II
4,020 25 30 35 40 45 50 55 60
FIGURE 8 – CROSS-MODULATION
DISTORTION versus OUTPUT LEVEL
,,
0
~-10—VCE =15Vdc
.= Channel 13 .~-,’:.,\\
z
0-20
cII
I1III
““ .-
010 20 30 40 50 60 70 80 90 100
Ic, COLLECTOR CURRENT (mAdc)
FIGURE 12 – NARROWBAND NOISE FIGURE versus
FREQUENCY
8.0
7.0 —-Rs= 50 Ohms
vcE =6.0 to 20 Vdc
6.0 -
IC =70’mAdc
5.0 ‘’50 mAdc —
4,0 ——- — —
3.0 —--.
2.0 — —
1.0
050 70 100 200 300 500
Ic, COLLECTOR CURRENT (mAdc) f, FREQUENCY (MHz)
MOTOROLA Sekicon,ductor Products’ Inc.
@
0\\$10- es.,
,=
>.\_/
-lo 0
100 200 300 500 700 1000 010 20 i\~y:~\$ ‘*O 50 GO 70 80 90 100
f, FREQUENCY(MHz) ,,.,...,3,.\
,.*/.$ .,t~>, ..: ~
FIGURE 15 – REVERSE TRANSFER ADMITTANCE ?is.:
FIG~W,~l#~ REVERSE TRANSFER ADMITTANCE versus
~:~.
Versus FREQUENCY *:,>$P- COLLECTOR CURRENT
H
m
100 700 1000
Ic, COLLECTORCURRENT(mAdc)
FIGURE 18 – FORWARD TRANSFER ADMITTANCE versus
COLLECTOR CURRENT ,
%250
zI1
g—VCE= 15Vdc
f=200 MHz 1
~7nn -bfe
aIIIIIIII I
L
&
%o010 20 30 40 50 60 70 80 90 100
100 200 300 51
f, FREQUENCY(MHz) Ic, COLLECTORCURRENT(mAdc)
Cm MOTOROLA Semiconductor Producfs Inc.
,’ ,
,,
FIGURE 19 – OUTPUT ADMITTANCE versus FREQUENCY
50
45 —vcE =15Vdc
~IC =50 mAdc
240
&
w35
v
230
$25 /
0
a20 b. ~
$/ ‘
15
5/‘
0/-
10
:- ~ / /
5.0 ‘9oe
0/ I
100 200 300 500 700 1000
f, Frequency (MHz)
FIGURE 21 – INPUT REFLECTION COEFFICIENT versus
FREQUENCY
MOTOROLA
FIGURE 20 – OUTPUT ADMITTANCE versus COLLECTOR
CURRENT
FIGURE 23 –REVERSE TRANSMISSION
COEFFICIENT versusFREQUENCY
{
FIGURE 24 –FORWARD TRANSMISSION COEFFICIENT
versusFREQUENCY
,?1.
\, ,.,:.. .
..,2%:,,
FIGURE 25 –INPUT REF~C*ON COEFFICIENT AND OUTPUT iEFLEcTiON
.+~~&~$lCIENT versusFREQUENCY
@MOTOROLA Semiconductor Products Inc.
,,
,,
-@
,
MOTOROLA SemHcon#wctor’ Prodwcts Inc. —
Printed in SwitzeQa”a
