ADL5322ACPZ-R2 - Analog Devices

700 MHz to 1000 MHz GaAs

Matched RF PA Predriver

ADL5322

Rev. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700 www.analog.com

FEATURES

Internally matched to 50 Ω input and output

Internally biased

Operating frequency: 700 MHz to 1000 MHz

Gain: 20 dB

OIP3: 45 dBm

P1 dB: 27 dBm

Noise figure: 5 dB

3 mm × 3 mm LFCSP

Power supply: 5 V

APPLICATIONS

CDMA2000, WCDMA, and GSM base station transceivers and

high power amplifiers

FUNCTIONAL BLOCK DIAGRAM

VCC 5

2 VCC

1 VCC

ADL5322

RFIN 8

3 GND

4 RFOUT

GND 6

GND 7

BIAS CONTROL

INPUT

MATCH

OUTPUT

MATCH

06057-001

Figure 1.

GENERAL DESCRIPTION

The ADL5322 is a high linearity GaAs driver amplifier that is

internally matched to 50 Ω for operation in the 700 MHz to

1000 MHz frequency range. The amplifier, which has a gain of

20 dB, is specially designed for use in the output stage of a

cellular base station radio or as an input preamplifier in a

multicarrier base station power amplifier. Matching and biasing

are all on-chip. The ADL5322 is available in a Pb-free, 3mm ×

3 mm, 8-lead LFCSP package with an operating temperature

from −40°C to +85°C.

ADL5322

Rev. 0 | Page 2 of 12

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications....................................................................................... 1

Functional Block Diagram .............................................................. 1

General Description ......................................................................... 1

Revision History ............................................................................... 2

Specifications..................................................................................... 3

Absolute Maximum Ratings............................................................ 4

ESD Caution.................................................................................. 4

Pin Configuration and Function Descriptions..............................5

Typical Performance Characteristics ..............................................6

Basic Connections.............................................................................8

CDMA2000 Driving Application................................................8

Evaluation Board ............................................................................ 10

Outline Dimensions ....................................................................... 11

Ordering Guide .......................................................................... 11

REVISION HISTORY

7/06—Revision 0: Initial Version

ADL5322

Rev. 0 | Page 3 of 12

SPECIFICATIONS

VCC = 5 V, TA = 25°C.

Table 1.

Parameter Conditions Min Typ Max Unit

FREQUENCY RANGE 700 1000 MHz

GAIN Frequency = 850 MHz 19 20.3 21.4 dB

vs. Frequency 832 MHz to 870 MHz ±0.125 dB

vs. Temperature −40°C to +85°C ±1 dB

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB

Frequency = 900 MHz 18.6 19.9 21.1 dB

vs. Frequency 869 MHz to 894 MHz ±0.125 dB

vs. Temperature −40°C to +85°C ±1 dB

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB

Frequency = 950 MHz 18.3 19.6 20.8 dB

vs. Frequency 925 MHz to 960 MHz ±0.125 dB

vs. Temperature −40°C to +85°C ±1.1 dB

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.1 dB

P1 dB Frequency = 850 MHz 27.0 27.7 dBm

vs. Frequency 832 MHz to 870 MHz ±0.1 dBm

vs. Temperature −40°C to +85°C ±1 dBm

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.3 dBm

Frequency = 900 MHz 27.3 27.9 dBm

vs. Frequency 869 MHz to 894 MHz ±0.1 dBm

vs. Temperature −40°C to +85°C ±1 dBm

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm

Frequency = 950 MHz 26.7 27.5 dBm

vs. Frequency 925 MHz to 960 MHz ±0.2 dBm

vs. Temperature −40°C to +85°C ±1 dBm

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.4 dBm

NOISE FIGURE Frequency = 830 MHz to 960 MHz 5 dB

INPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB

OUTPUT RETURN LOSS Frequency = 830 MHz to 960 MHz −10 dB

OIP3 Carrier spacing = 1 MHz, POUT = 5 dBm per carrier

Frequency = 850 MHz 44.8 dBm

vs. Frequency 832 MHz to 870 MHz ±0.25 dBm

vs. Temperature −40°C to +85°C ±3.0 dBm

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.5 dBm

Frequency = 900 MHz 45.3 dBm

vs. Frequency 869 MHz to 894 MHz ±0.25 dBm

vs. Temperature −40°C to +85°C ±2.7 dBm

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm

Frequency = 950 MHz 44.4 dBm

vs. Frequency 925 MHz to 960 MHz ±0.25 dBm

vs. Temperature −40°C to +85°C ±2.2 dBm

vs. Voltage 5 V, @ 5% (4.75 V to 5.25 V) ±0.8 dBm

POWER SUPPLY

Supply Voltage 4.75 5 5.25 V

Supply Current POUT = 5 dBm 320 mA

Operating Temperature −40 +85 °C

ADL5322

Rev. 0 | Page 4 of 12

ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

Supply Voltage, VPOS 6 V

Input Power (re: 50 Ω) 18 dBm

Equivalent Voltage 1.8 V rms

θJC (Soldered) 28.5°C/W

Maximum Junction Temperature 150°C

Operating Temperature Range −40°C to +85°C

Storage Temperature Range −65°C to +150°C

Soldering Temperature 260°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

ADL5322

Rev. 0 | Page 5 of 12

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

PIN 1

INDICATOR

ADL5322

5 VCC

VCC 2

VCC 1 8 RFIN

GND 3

RFO UT 4

6 GND

7 GND

TOP V IEW

(No t to Scal e)

06057-002

Figure 2. Pin Configuration

Table 3. Pin Function Descriptions

Pin No. Mnemonic Description

1, 2, 5 VCC Positive 5 V Supply Voltage. Bypass these three pins with independent power supply decoupling

networks (100 pF, 10 nF, and 10 μF).

3, 6, 7 GND Device Ground.

4 RFOUT RF Output. Internally matched to 50 Ω.

8 RFIN RF Input. Internally matched to 50 Ω.

N/A EP Exposed Paddle. Connect to ground plane via a low impedance path.

Table 4. S-Parameters

Frequency ADL5322 (1, 1) ADL5322 (1, 2) ADL5322 (2, 1) ADL5322 (2, 2)

700.0 MHz 0.210/109.457 0.002/97.018 +11.221/−158.622 0.436/150.470

720.0 MHz 0.195/104.437 0.002/93.284 +11.108/−166.579 0.392/145.211

740.0 MHz 0.179/99.101 0.002/87.856 +11.013/−174.596 0.345/137.443

760.0 MHz 0.165/93.363 0.002/86.137 10.931/177.282 0.295/133.051

780.0 MHz 0.151/86.953 0.002/78.668 10.856/169.006 0.242/125.612

800.0 MHz 0.138/79.928 0.002/74.072 10.781/160.613 0.187/116.434

820.0 MHz 0.125/71.950 0.002/68.940 10.698/152.065 0.130/102.897

840.0 MHz 0.114/62.829 0.002/62.269 10.605/143.342 0.079/76.154

860.0 MHz 0.103/52.162 0.002/56.742 10.493/134.489 0.061/18.090

880.0 MHz 0.095/39.531 0.002/56.696 10.361/125.433 +0.098/−26.962

900.0 MHz 0.090/24.952 0.003/43.549 10.210/116.239 +0.153/−46.741

920.0 MHz 0.088/9.188 0.003/37.254 10.033/106.889 +0.211/−58.300

940.0 MHz +0.090/−7.350 0.003/29.904 9.837/97.326 +0.269/−66.606

960.0 MHz +0.095/−23.642 0.003/24.334 9.614/87.600 +0.324/−73.265

980.0 MHz +0.104/−39.131 0.003/16.521 9.364/77.609 +0.376/−78.914

1.000 GHz +0.115/−53.477 0.003/8.139 9.081/67.342 +0.424/−83.911

ADL5322

Rev. 0 | Page 6 of 12

TYPICAL PERFORMANCE CHARACTERISTICS

22.0

17.5

800 1000

FREQUENCY (M Hz )

GAIN (dB)

850 900 950

21.5

21.0

20.5

20.0

19.5

19.0

18.5

18.0

TE M P = –40°C

TEMP = +25°C

TE MP = + 85°C

06057-003

Figure 3. Gain vs. Frequency, VCC = 5 V, TA = −40°C, +25°C, and +85°C

29.0

26.0

800 1000

FREQUENCY (M Hz )

P1dB (dBm)

850 900 950

28.5

28.0

27.5

27.0

26.5

TE M P = –4 0°C

TEMP = +25°C

TEMP = +85°C

06057-004

Figure 4. P1 dB vs. Frequency, VCC = 5 V, TA = −40°C, +25°C, and +85°C

800 1000

FREQUENCY (M Hz )

OIP3 (dBm)

850 900 950

TE M P = –40° C

TEMP = +25°C

TE M P = +85° C

06057-005

Figure 5. OIP3 vs. Frequency, VCC = 5 V, TA = −40°C, +25°C, and +85°C

5.6

4.0

700 1000

FREQUENCY (M Hz )

NF (dB)

800 900

5.4

5.2

5.0

4.8

4.6

4.4

4.2

06057-006

Figure 6. Noise Figure vs. Frequency, Multiple Devices, VS = 5 V, TA = 25°C

28.4

26.4

800 1000

FREQUENCY (M Hz )

P1dB (dBm)

850 900 950

28.2

28.0

27.8

27.6

27.4

27.2

27.0

26.8

26.6

= 5. 25V

= 5V

= 4. 75V

06057-007

Figure 7. P1 dB vs. Frequency, VCC = 4.75 V, 5 V, and 5.25 V, TA = 25°C

46.5

43.0

800 1000

FREQUENCY (M Hz )

OIP3 (dBm)

850 900 950

46.0

45.5

45.0

44.5

44.0

43.5

= 5. 25V

= 5V

= 4. 75V

06057-008

Figure 8. OIP3 vs. Frequency, VCC = 4. 75 V, 5 V, and 5.25 V, TA = 25°C

ADL5322

Rev. 0 | Page 7 of 12

044.1

OIP3 (dBm)

FREQUENCY

44.3 44.5 44.7 44.9 45.1 45.3 45.5 45.7

06057-009

Figure 9. Distribution of OIP3 at 850 MHz

–

–26

0.70 1.00

FREQUENCY ( GHz)

ADL5322 [ 1, 1] ( dB)

ADL5322 [ 2, 2] ( dB)

0.85 0.900.75 0.80 0.95

–14

–16

–18

–20

–22

–24

–8

–10

–12

06057-010

S22

S11

Figure 10. Input S11 and Output S22 Return Loss vs. Frequency

06057-011

043.6

OIP3 (dBm)

FREQUENCY

43.8 44.0 44.2 44.4 44.6 44.8 45.0 45.2

Figure 11. Distribution of OIP3 at 950 MHz

ADL5322

Rev. 0 | Page 8 of 12

BASIC CONNECTIONS

Figure 14 shows the basic connections for operating the

ADL5322. Each of the three power supply lines should be

decoupled with 10 μF, 10 nF, and 100 pF capacitors. Pin 3, Pin 6,

Pin 7, and the exposed paddle under the device should all be

connected to a low impedance ground plane. If multiple ground

planes are being used, these should be stitched together with

vias under the device to optimize thermal conduction. See

recommended land pattern in Figure 12.

06057-013

Figure 12. Recommended Land Pattern

CDMA2000 DRIVING APPLICATION

Figure 13 shows a plot of the spectrum of an ADL5323 driving

at 4-carrier CDMA2000 signal at 0 dBm per carrier (total

carrier power = 6 dBm), centered at 880 MHz. At 750 kHz

and 1.98 MHz offset, adjacent channel power ratios of −59 dBc

and −84 dBc (measured in 30 kHz with respect to the 1.22 MHz

carrier) are observed. At 4 MHz carrier offset, −73 dBc is

measured in a 1 MHz bandwidth (−133 dBm/Hz). Note that

the spectrum of the four carriers is slightly rounded due the

frequency response of the cavity-tuned filter that was used to

filter out the noise and distortion of the source signal.

–

–110 CENT ER 881. 875M Hz SPAN 10MHz

(dBm)

1MHz/

–50

–60

–70

–80

–90

–100

–20

–30

–40

RBW = 30kHz

VBW = 3 00kHz

SWT = 2s

RF ATT = 20dB

MI X E R = –10dB m

CH PW R = 0.26d Bm

ACP UP = –59.33d B

ALT1 UP = –84 .35d B

ALT2 UP = –72 .74d B

06057-014

Figure 13. Spectrum of 4 Adjacent CDMA2000 Carriers Centered at 880 MHz;

Total Carrier Power = 6 dBm (0 dBm per Carrier)

AGNDAGNDAGND

AGND

VCC

RFIN

RFOUT

ADL5322

VCC

GND

RFIN VCC

GND

RFOUT

100pF

4AGND

100pF

10µF C3

10nF

100pF

VCC

AGNDAGNDAGND

C11

10µF

100pF C10

10nF

AGNDAGNDAGND

10µF

100pF C7

10nF

6057-012

Figure 14. Basic Connections

ADL5322

Rev. 0 | Page 9 of 12

Figure 15 shows how ACP varies with output power level. The

close-in ACP is a function of the signal coding and is unaffected

by output headroom at these power levels. The ACP measured

at 1.98 MHz carrier offset is −72 dBc at 10 dBm output power

(12 dB below the required 60 dBc). At 4 MHz carrier offset, the

noise and distortion measured in a 1 MHz bandwidth is −75 dBm

at 6 dBm (total) output power (0 dBm per carrier). In a 50 dBm

transmitter, this corresponds to an antenna-referred output

power of −31 dBm (1 MHz), which is 18 dB below what is

required by the CDMA2000 standard.

–

–100

–10

OUTPUT P OWE R ( dBm)

ACP1 AND ACP2 – 30kHz RBW (dBc)

ACP3 – 1MHz RBW (dBm)

–50

–40

–60

–70

–80

–90

–

–100

–50

–40

–60

–70

–80

–90

–8 –6 –4 –2 0 2 4 6 8

ACP1 (dBc) – 750k Hz OF FSE T – 30kHz RBW

ACP3 (dBm) – 4M Hz OFFSET – 1MHz RBW

ACP2 (dBc) – 1.98MHz OFFSET – 30kHz RBW

06057-015

Figure 15. CDMA2000 ACP vs. Output Power per Carrier; 4 Adjacent Carriers

ADL5322

Rev. 0 | Page 10 of 12

EVALUATION BOARD

Figure 17 shows the schematic of the ADL5322 evaluation

board. The board is powered by a single supply in the 4.75 V to

5.25 V range. The power supply is decoupled on each of the

three power supply pins by 10 μF, 10 nF, and 100 pF capacitors.

See Table 5 for exact evaluation board component values. Note

that all three VCC pins (Pin 1, Pin 2, and Pin 5) should be

independently bypassed as shown in Figure 17 for proper

operation.

06057-016

Figure 16. Evaluation Board Component Side View

Table 5. Evaluation Board Components

Component Function Default Value

DUT1 Driver amplifier ADL5322

C1, C12, C16 Low frequency bypass capacitors 10 μF, 0603

C3, C11, C17 Low frequency bypass capacitors 10 nF, 0402

C2, C10, C18 High frequency bypass capacitors 100 pF, 0402

C8, C9, C13, C14, R3 Open Open, 0402

R2, R4 AC coupling capacitors 100 pF, 0402

AGNDAGNDAGND

AGND

VCC

RFIN

RFOUT

ADL5322/

ADL5323

VCC

GND

RFIN VCC

GND

RFOUT

100pF DUT1

VCCVCC

VCC

GND

4AGND

100pF

10µF C3

10nF

AGNDAGND

OPEN C9

OPEN

100pF

VCC

TP2

VCC

SNS1

AGNDAGNDAGND

C16

10µF

C18

100pF

TP1

C17

10nF

AGNDAGNDAGND

C12

10µF

C10

100pF C11

10nF

AGNDAGND

C13

OPEN C14

OPEN

06057-017

Figure 17. Evaluation Board Schematic

ADL5322

Rev. 0 | Page 11 of 12

OUTLINE DIMENSIONS

0.50

BSC

0.60 MAX PIN 1

INDICATO

1.50

REF

0.50

0.40

0.30

2.75

BSC SQ

TOP

VIEW

12° MAX 0.70 MAX

0.65 TYP

SEATING

PLANE

PIN 1

INDICATOR

0.90 MAX

0.85 NOM

0.30

0.23

0.18

0.05 MAX

0.01 NOM

0.20 REF

1.89

1.74

1.59

1.60

1.45

1.30

3.00

BSC SQ

Figure 18. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]

3 mm × 3 mm Body, Very Thin, Dual Lead

(CP-8-2)

Dimensions shown in millimeters

ORDERING GUIDE

Model Temperature Range Package Description Package Option Branding Ordering Quantity

ADL5322ACPZ-R71−40°C to +85°C 8-Lead LFCSP_VD, 7" Tape and Reel CP-8-2 OP 1500

ADL5322ACPZ-WP1−40°C to +85°C 8-Lead LFCSP_VD, Waffle Pack CP-8-2 OP 50

ADL5322-EVAL Evaluation Board 1

1 Z = Pb-free part.

ADL5322

Rev. 0 | Page 12 of 12

NOTES

registered trademarks are the property of their respective owners.

D06057-0-7/06(0)