ML9XX11 SERIES
TYPE
NAME ML925B11F/ML920J11S/ML925J11F
MITSUBISHI LASER DIODES
InGaAsP DFB LASER DIODES
DESCRIPTION
ML9XX11 series are DFB (Distributed Feedback) laser diodes
emitting light beam around 1550nm.
They are well suited for light source in long distance digital
transmission systems.
ML925B11F / ML920J11S are hermetically sealed devices with
the photo diode for optical output monitoring.
FEATURES
Low threshold current (typical 10mA)
Wide temperature range operation
High - side mode suppression ratio (typical 40dB)
High speed response (typical 0.2nsec)
MQW* active layer
FSBH** structure fabricated by MOCVD process
* Multiple Quantum Well
** Facet Selective - growth Buried Hetero structure
APPLICATION
Long - distance digital transmission system
***Specification Note
Type Operation Temperature Range
ML9XX11-01 Tc=-40 to 85ºC
ML9XX11-02 Tc=-20 to 85ºC
ML9XX11-03 Tc= 0 to 85ºC
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC
MITSUBISHI
ELECTRIC
mA
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ith Threshold current CW -10 30 mA
Iop Operation current CW,Po=5mW -20 60 mA
Slope efficiency CW,Po=5mW 0.15 0.25 -
V
Vop Operating voltage CW,Po=5mW 1.2 1.8
mW/mA
pPeak wavelength CW,Po=5mW ***)Note 1530 1550 1570 nm
Beam divergence angle (parallel) CW,Po=5mW 25 deg.
Beam divergence angle CW,Po=5mW
-0.2 -
-
(perpendicular)
SMSR Side mode suppression ratio CW,Po=5mW ***)Note
ImCW,Po=5mW
35
-
-35 45 deg.
30 40 -dB
Monitoring output current
tr,tf Rise and Fall time If=Ith,Po=5mW,10 - 90% - 0.40.2 ns
IFD Forward current (Photo diode) -2mA
Symbol Paramete
Conditions Ratings Unit
Po Light output power CW 6mW
VRL Reverse voltage (Laser diode) -2V
VRD Reverse voltage (Photo diode) -20 V
Tc Case temperature -
Tstg Storage temperature --40to+100 ºC
ºC
-02 -20 to +85
-01 -40 to +85
-03 0 to +85