MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsP DFB LASER DIODES TYPE NAME ML925B11F/ML920J11S/ML925J11F DESCRIPTION APPLICATION ML9XX11 series are DFB (Distributed Feedback) laser diodes emitting light beam around 1550nm. They are well suited for light source in long distance digital transmission systems. ML925B11F / ML920J11S are hermetically sealed devices with the photo diode for optical output monitoring. Long - distance digital transmission system ***Specification Note Type FEATURES Low threshold current (typical 10mA) Wide temperature range operation High - side mode suppression ratio (typical 40dB) High speed response (typical 0.2nsec) MQW* active layer FSBH** structure fabricated by MOCVD process Operation Temperature Range ML9XX11-01 Tc=-40 to 85C ML9XX11-02 Tc=-20 to 85C ML9XX11-03 Tc= 0 to 85C * Multiple Quantum Well ** Facet Selective - growth Buried Hetero structure ABSOLUTE MAXIMUM RATINGS Parameter Symbol Po Light output power Conditions Ratings Unit CW 6 mW VRL Reverse voltage (Laser diode) - 2 V VRD Reverse voltage (Photo diode) - 20 V IFD Forward current (Photo diode) - 2 mA Tc Case temperature - Storage temperature - Tstg -01 -02 -03 -40 to +85 -20 to +85 0 to +85 C - 40 to +100 C ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C Symbol Ith Parameter Test conditions Min. Typ. Max. Unit Threshold current CW - 10 30 mA Iop Operation current CW,Po=5mW - 20 60 mA Vop Operating voltage CW,Po=5mW 1.2 0.25 mW/mA Peak wavelength Beam divergence angle (parallel) CW,Po=5mW CW,Po=5mW ***)Note CW,Po=5mW 1.8 - V Slope efficiency 0.15 1530 - 1550 25 1570 35 nm deg. Beam divergence angle (perpendicular) CW,Po=5mW - 35 45 deg. Side mode suppression ratio CW,Po=5mW ***)Note 30 40 - dB Monitoring output current CW,Po=5mW - 0.2 - mA Rise and Fall time If=Ith,Po=5mW,10 - 90% - 0.2 0.4 ns p SMSR Im tr,tf MITSUBISHI ELECTRIC MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsP DFB-LASER DIODES OUTLINE DRAWINGS (Dimension:mm) 5.6 +0 -0.03 ML925B11F 4.25 3.550.1 (0.25) 2-90 (3) Case (0.25) (2) (4) 10.1 0.250.03 (Glass) (3) (4) (1) PD LD 2.0Min. 0.1 2.10.15 1.2 1.27 0.03 1.0Min. Emitting Facet (2) (1) Reference Plane 18 1 ML925B11F 2.00.25 (P.C.D.) 4- 0.450.05 (2) (1) (Dimension:mm) 5.6 +0 -0.03 ML920J11S 4.25 3.550.1 (0.25) (3) 2-90 (2) (1) Case (0.25) (4) PD LD 2.0Min. 1.0Min. 0.1 2.10.15 1.2 1.27 0.03 0.250.03 (Glass) 10.1 18 1 (3) (2) (4) Emitting Facet (1) Reference Plane ML920J11S 2.00.25 (P.C.D.) 4- 0.450.05 (2) (1) 5.6 +0 -0.03 ML925J11F 4.3 (Dimension:mm) (0.25) Top View (1) (4) (3) Case (2) (0.25) 2-90 (3) (4) 10.1 PD 1.27 0.03 3.97 0.15 Emitting Facet 18 1 LD (2) Reference Plane 1.2 0.1 (7.51) 3.750.1 ML925J11F 2.00.25 (P.C.D.) 4- 0.450.05 (1) (2) (1) MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsPDFBLASERDIODES MITSUBISHI LASER DIODES ML9XX11 SERIES InGaAsPDFBLASERDIODES