BCR16CM-12LB#BB0 - RENESAS TECHNOLOGY

R07DS1032EJ0500 Rev.5.00 Page 1 of 8

Jun. 28, 2018

Data Sheet

BCR16CM-12LB

600V - 16A - Triac

Medium Power Use

Features

• IT (RMS) : 16 A

• VDRM : 600 V

• IFGTI, IRGTI, IRGT III: 30 mA (20 mA) Note6

• Tj: 150°C

• Non-insulated Type

• Planar Passivation Type

Outline

Application

Power supply, motor control, heater control, solenoid control, and other general purpose AC control applications.

Maximum Ratings

Parameter

Symbol

Voltage class

Unit

Repetitive peak off-state voltageNote1

VDRM

600

Non-repetitive peak off-state voltageNote1

VDSM

720

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

IT (RMS)

Commercial frequency, sine full wave 360

conduction, Tc = 125CNote3

Surge on-state current

ITSM

170

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

I2t for fusion

I2t

121

A2s

Value corresponding to 1 cycle of half wave

60 Hz, surge on-state current

Peak gate power dissipation

PGM

Average gate power dissipation

PG (AV)

0.5

Peak gate voltage

VGM

Peak gate current

IGM

Junction Temperature

–40 to +150

C

Storage temperature

Tstg

–40 to +150

C

RENESAS Package code: PRSS0004AG-A

(Package name: TO-220AB)

2, 4

1. T1Terminal

2. T2Terminal

3. Gate Terminal

4. T2Terminal

RENESAS Package code: PRSS0004AT-A

(Package name: TO-220ABA)

123

R07DS1032EJ0500

Rev.5.00

Jun. 28, 2018

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 2 of 8

Jun. 28, 2018

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

IDRM

—

2.0

Tj = 150C, VDRM applied

On-state voltage

VTM

—

1.5

Tc = 25C, ITM = 25 A,

instantaneous measurement

Gate trigger voltageNote2



VFGT

—

1.5

Tj = 25C, VD = 6 V, RL = 6 ,

RG = 330 



VRGT

—

1.5



VRGT

—

1.5

Gate trigger curentNote2



IFGT

—

30 Note6

Tj = 25C, VD = 6 V, RL = 6 ,

RG = 330 



IRGT

—

30 Note6



IRGT

—

30 Note6

Gate non-trigger voltage

VGD

0.2

—

Tj = 125C, VD = 1/2 VDRM

0.1

—

Tj = 150C, VD = 1/2 VDRM

Thermal resistance

Rth (j-c)

—

1.4

C/W

Junction to caseNote3 Note4

Critical-rate of rise of off-state

commutation voltageNote5

(dv/dt)c

—

V/s

Tj = 125C

—

V/s

Tj = 150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.

4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0C /W.

5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

6. High sensitivity (IGT  20 mA) is also available. (IGT item:1)

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125°C/150°C

2. Rate of decay of on-state commutating current

(di/dt)c = –8.0 A/ms

3. Peak off-state voltage

VD = 400 V

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c

Supply Voltage

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 3 of 8

Jun. 28, 2018

Performance Curves

102

103

101

-40 040 80 120 160

Maximum On-State Characteristics

On-State Voltage (V)

On-State Current (A)

Rated Surge On-State Current

Conduction Time (Cycles at 60Hz)

Surge On-State Current (A)

Gate Characteristics (I, II and III)

Gate Current (mA)

Gate Voltage (V)

Gate Trigger Voltage vs.

Junction Temperature

Junction Temperature (°C)

Gate Trigger Voltage (Tj = t°C)

Gate Trigger Voltage (Tj = 25°C)×100 (%)

Gate Trigger Current vs.

Junction Temperature

Junction Temperature (°C)

Gate Trigger Current (Tj = t°C)

Gate Trigger Current (Tj = 25°C)×100 (%)

40 1 2 3

101

10- 1

100102

103

101

100101

101102103104

102

200

VGD = 0.1V

VGT = 1.5V

IFGT I IRGT I, IRGT III

-40 040 80 120 160

Typical Example

IGM = 2A

PG(AV) = 0.5WVGM = 10V Typical Example

PGM = 5W

IFGT I

IRGT I

IRGT III

Gate Trigger Current (tw)

Gate Trigger Current (DC) ×100 (%)

Gate Current Pulse Width (s)

Gate Trigger Current vs.

Gate Current Pulse Width

101

103

100101

102

Typical Example

IRGT III

IRGT I

IFGT I

100

120

140

160

180

103

102

101

100

Tj = 150°C

Tj = 25°C

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 4 of 8

Jun. 28, 2018

Allowable Ambient Temperature vs.

On-State Power Dissipation (W)

RMS On-State Current (A)

Maximum On-State Power Dissipation

RMS On-State Current

Ambient Temperature (°C)

RMS On-State Current (A)

160

120

100

04.00 0.5 1.5 2.5 3.5

140

1.0 2.0 3.0

Natural convection

No Fins

Curves apply regardless

of conduction angle

Resistive, inductive loads

RMS On-State Current (A)

Case Temperature (°C)

Allowable Case Temperature vs.

RMS On-State Current

160

120

100

140

RMS On-State Current (A)

Ambient Temperature (°C)

Allowable Ambient Temperature vs.

RMS On-State Current

160

120

100

140

103

102

101

101102103104105

100

10- 1

Maximum Transient Thermal Impedance

Characteristics (Junction to ambient)

Transient Thermal Impedance (°C/W)

Conduction Time (Cycles at 60Hz)

No Fins

Conduction Time (Cycles at 60Hz)

(°C/W)

Transient Thermal Impedance

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

102103104

10- 1 100101102

020024 861012141618

360°Conduction

Resistive,

inductive loads

2 4

Curves apply

regardless of

conduction angle

360°Conduction

Resistive,

inductive loads

6 8 10 12 14 16 18 20

02 4 6 8 10 12 14 16 18 20

Curves apply

regardless of

conduction angle

Resistive,

inductive loads

Natural convection

All fins are black painted

aluminum and greased

100 ×100 ×t2.3

60 ×60 ×t2.3

120 ×120 ×t2.3

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 5 of 8

Jun. 28, 2018

101102103104

Rate of Rise of Off-State Voltage (V/s)

Breakover Voltage (dv/dt = xV/s)

Breakover Voltage (dv/dt = 1V/s) ×100 (%)

Rate of Rise of Off-State Voltage (V/s)

Breakover Voltage (dv/dt = xV/s)

Breakover Voltage (dv/dt = 1V/s) ×100 (%)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=150°C)

100

120

160

140

100

120

160

140

Typical Example

Tj = 125°C

III Quadrant

I Quadrant

Typical Example

Tj = 150°C

101102103104

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=125°C)

102

103

100

101

Latching Current (mA)

Latching Current vs.

Junction Temperature

Junction Temperature (°C)

-40 040 80 120 160

T2+,G-

Holding Current (mA)

Holding Current vs.

Junction Temperature

Junction Temperature (°C)

102

100

101

-40 040 80 120 160

Typical Example

VD=12V

I Quadrant

III Quadrant

Typical Example

-40 040 80 120 160

Breakover Voltage vs.

Junction Temperature

Junction Temperature (°C)

Breakover Voltage (Tj = t°C)

Breakover Voltage (Tj = 25°C)×100 (%)

100

120

140

160

Typical Example

Junction Temperature (°C)

RRepetitive Peak Off-State Current (Tj = 25°C) ×100 (%)

Repetitive Peak Off-State Current vs.

Junction Temperature

- 40 0 40 80 120 160

106

105

104

103

102

Typical Example

Repetitive Peak Off-State Current (Tj = t°C)

III Quadrant

I Quadrant

Distribution

Typical

Distribution

Typical

T2,G

- -

T2+,G+

III Quadrant

I Quadrant

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 6 of 8

Jun. 28, 2018

Gate Trigger Characteristics Test Circuits

330

C1= 0.1 to 0.47 F

R1= 47 to 100

C0= 0.1 F

R0= 100

C0R0

Load

6

Recommended peripheral components for Triac

6

6V A

Test Procedure I

Test Procedure III

Test Procedure II

101

100102

102

101

100

Commutation Characteristics (Tj=150°C)

Critical Rate of Rise of Off-State

Commutating Voltage (V/s)

Rate of Decay of On-State

Commutating Current (A/ms)

Main Voltage

Main CurrentIT(di/dt)c

Time

(dv/dt)c

Typical Example

Tj = 150°C

IT= 4 A

t= 500 s

VD= 200 V

f = 3 Hz

Commutation Characteristics (Tj=125°C)

Critical Rate of Rise of Off-State

Commutating Voltage (V/s)

Rate of Decay of On-State

Commutating Current (A/ms)

101

100102

102

101

100

Main Voltage

Main CurrentIT(di/dt)c

Time

(dv/dt)c

Typical Example

Tj = 125°C

IT= 4 A

t= 500 s

VD= 200 V

f = 3 Hz

Minimum

Value I Quadrant

I Quadrant

III Quadrant

Value

Minimum

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 7 of 8

Jun. 28, 2018

Package Dimensions

Ordering code: #BH0

Ordering code: #BB0

Unit: mm

2.1g

MASS[Typ.]

PRSS0004AT-A

RENESAS CodeJEDEC Package Code Previous CodePackage Name

TO-220ABA TO-220AB TO-220ABA

2.6 Max

1.62 Max

2.54 2.54

(3.00)

1.30 + 0.10

- 0.05

0.50 + 0.10

- 0.05

9.20±0.2

9.90±0.2

3.0±0.2

18.95 Max

f3.6±0.1

0.80±0.1

10.0±0.2

10.08±0.3

4.50±0.2

Unit: mm

2.1g

MASS[Typ.]

PRSS0004AG-A

RENESAS CodeJEITA Package Code Previous CodePackage Name

TO-220AB SC-46 TO-220ABS

2.6 Max

1.62 Max

2.54 2.54

(3.00)

1.30 + 0.10

- 0.05

0.50 + 0.10

- 0.05

9.2±0.2

9.9±0.2

2.8±0.1

15.7±0.2

f3.6±0.2

0.80±0.10

10.0±0.2

13.08±0.20

4.5±0.2

BCR16CM-12LB Data Sheet

R07DS1032EJ0500 Rev.5.00 Page 8 of 8

Jun. 28, 2018

Ordering Information

Orderable Part Number

Package

Quantity Note7

Remark

Status

BCR16CM-12LB#BH0

TO-220ABA

50 pcs./ tube

Straight type

Mass Production

BCR16CM-12LB-1#BH0

TO-220ABA

50 pcs./ tube

Straight type, IGT item:1

BCR16CM-12LB#BB0

TO-220ABS

50 pcs./ tube

Straight type

EOL Candidate

BCR16CM-12LB-1#BB0

TO-220ABS

50 pcs./ tube

Straight type, IGT item:1

BCR16CM-12LB#BB0

TO-220ABS

50 pcs./ tube

:Lead form type

BCR16CM12LB1#BB0

TO-220ABS

50 pcs./ tube

:Lead form type, IGT item:1

Notes: 7. Please confirm the specification about the shipping in detail.

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