T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 1 of 7
2N6788 and 2N6790
Availa ble on
commercial
versions
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
These 2N6788 and 2N6790 devices are military qualified up to a JANTXV level for high-
relia bi li ty applic a tions. Microsemi also offers numerous other products to meet higher and
lower power voltage regulation applications.
TO-205AF
(formerly TO-39)
Package
Also available in:
U-18 LCC Package
(surface mount)
2N6788U & 2N6790U
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N6788 and 2N6790 number.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• High frequency operation.
• Lightweight package.
• ESD rated to class 1A.
MAXIMUM RATINGS @ TC = +25 °C unless otherwise noted
Parameters / Test Conditions Symbol Value Unit
Junction & Storage Temperature
TJ, Tstg
-55 to +150
°C
Thermal Resi stan ce Jun cti on-to-Case (see Figure 1)
RӨJC
6.25
ºC/W
Total Power Dissipation (1)
PT
0.8
W
Drain to Gate Voltage
2N6788
2N6790
VDG
100
200
V
Drain – Source Voltage
2N6788
2N6790
VDS
100
200
V
Gate – Source Voltage
VGS
± 20
V
Drain Current, dc @ T
C
= +25 °C (2)
(see Figure ?)
2N6788
2N6790
ID1
6.0
3.5
A
Drain Current, dc @ T
C
= +100 °C
2N6788
2N6790
ID2
3.5
2.25
A
Off-State Current
(3)
2N6788
2N6790
IDM 24
14
A (pk)
Source Current
2N6788
2N6790
IS
6.0
3.5
A
Notes: 1. Derated linearly by 0.16 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal
wires and may be limited due to pin diameter.
3. IDM = 4 x ID1; ID1 as calculated in note 2.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park ,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 2 of 7
2N6788 and 2N6790
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap .
• TERMINALS: Tin/lead solder dip nickel plat e or RoHS compliant pure tin plate ( commer cia l grade only ).
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N6788 (e3)
Reliability Le vel
JAN=JAN level
JANTX=JANTX level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
ID
Drain current.
IF
Forward current.
TC
Case temperature.
VDD
Drain supply voltage.
VDS
Drain to source voltage.
VGS
Gate to sourc e voltage.
T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 3 of 7
2N6788 and 2N6790
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 1 mA 2N6788
2N6790 V(BR)DSS 100
200 V
Gate-Source Voltage (Threshol d)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, Tj = +125 °C
VDS ≥ VGS, ID = 0.25 mA, Tj = -55 °C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
V
Gate Current
VGS = ±20 V, VDS = 0 V
VGS = ±20 V, VDS = 0 V, Tj = +125 °C
IGSS1
IGSS2
±100
±200 nA
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
Drain Current
VGS = 0V, VDS = 80 V
VGS = 0V, VDS = 160 V
2N6788
2N6790
IDSS1
25
µA
Drain Current
VGS = 0V, VDS = 80 V, Tj = +125 °C
VGS = 0V, VDS = 160 V, Tj = +125 °C
2N6788
2N6790
IDSS2
0.25
mA
Static Drain-Source On-S tat e R esist ance
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
2N6788
2N6790
rDS(on)1
0.30
0.80
Ω
Static Drain-Source On-S tat e R esistance
VGS = 10 V, ID = 6.0 A pulsed
VGS = 10 V, ID = 3.5 A pulsed
2N6788
2N6790
rDS(on)2
0.35
0.85
Ω
Static Drain-Source On-S tat e R esis tan ce
Tj = +125 °C:
VGS = 10 V, ID = 3.5 A pulsed
VGS = 10 V, ID = 2.25 A pulsed
2N6788
2N6790
rDS(on)3
0.54
1.50
Ω
Diode Forward Voltage
V
GS
= 0 V, I
D
= 6.0 A pulsed
VGS = 0 V, ID = 3.5 A pulsed
2N6788
2N6790
VSD
1.8
1.5
V
T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 4 of 7
2N6788 and 2N6790
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARA CTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
2N6788
2N6790
Qg(on)
18.0
14.3
nC
Gate to Source Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
2N6788
2N6790
Qgs
4.0
3.0
nC
Gate to Drain Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
2N6788
2N6790
Qgd
9.0
9.0
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-on delay time
ID = 6.0 A , VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A , VGS = 10 V, RG = 7.5
Ω
, VDD = 74 V
2N6788
2N6790
td(on)
40
ns
Rinse time
ID = 6.0 A , VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A , VGS = 10 V, RG = 7.5
Ω
, VDD = 74 V
2N6788
2N6790
tr
70
50
ns
Turn-off delay time
ID = 6.0 A , VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A , VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
2N6788
2N6790
td(off)
40
50
ns
Fall time
ID = 6.0 A , VGS = 10 V, RG = 7.5 Ω, VDD = 35 V
ID = 3.5 A , VGS = 10 V, RG = 7.5 Ω, VDD = 74 V
2N6788
2N6790
tf
70
50
ns
Diode Reverse Recovery Time
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 6.0 A
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 3.5 A
2N6788
2N6790
trr
240
400
ns
T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 5 of 7
2N6788 and 2N6790
GRAPHS
t1, RECTANGULAR PULSE DURATION (SECONDS)
Figure 1
Thermal Impedance Curves
TC CASE TEMPERATURE (°C) TC CASE TEMPERATURE (°C)
(2N6788) (2N6790)
Figure 2
Maximum Drain Current vs. Case Temperature Graph
ID DRAIN CURRENT (AMPERES)
THERMAL RESPONSE (Z
ӨJC
)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 6 of 7
2N6788 and 2N6790
GRAPHS (continued)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Maximum Safe Operating Area (2N6788)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Maximum Safe Operating Area (2N6790)
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
T4-LDS-0164, Rev. 1 (121482) ©2012 Microsemi Corporation Page 7 of 7
2N6788 and 2N6790
PACKAGE DIMENSIONS
SCHEMATIC CIRCUIT
NOTES:
1. Dimensions are in inches.
2. Millimet ers are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defi ned by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true
positi on (TP) at maximum material condition (MMC) relative t o tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontroll ed in L1 and beyond LL
minimum.
8. All three leads.
9. The collector shall be internall y connected to the case.
10. Dimension r (radius) appl i es to both inside corners of tab.
11. In accordance with ASME Y14.5M, diam eters are equivalent to Φx symbology.
12. Lead 1 = source, lead 2 = gate, lead 3 = drain.
Ltr
Dimensions
Inch
Millimeters
Notes
Min Max
Min Max
CD
.305 .335 7.75 8.51
CH
.160 .180 4.07 4.57
HD .335 .370 8.51 9.40
h
.009 .041 0.23 1.04
J
.028
.034
0.71
0.86
3
k
.029
.045
0.74
1.14
3, 4
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.7
19.05
7, 8, 12
LS
.200 TP
5.08 TP
6
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2 .250
6.35
7, 8
P .100
2.54
Q
.050
1.27
5
r
.010
0.25 10
α
45° TP
45° TP
6
