Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼
▼ ▼
▼ Low On Resistance BVDSS -20V
▼ C
▼ C▼ C
▼ Capable of 2.5V Drive RDS(ON) 20mΩ
▼
▼ ▼
▼ Fast Switching ID-9.5A
▼
▼ ▼
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient3Max. 50 ℃/W
Data and specifications subject to change without notice
Pb Free Plating Product
Thermal Data Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current3-7.6
Pulsed Drain Current1-76
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
20020502
AP9620GM
Rating
-20
±8
-9.5
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.037 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-4.5V, ID=-9.5A - - 20 mΩ
VGS=-2.5V, ID=-6.0A - - 35 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA - - -1 V
gfs Forward Transconductance VDS=-10V, ID=-9.5A - 28 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=-9.5A - 30 - nC
Qgs Gate-Source Charge VDS=-10V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-5V - 3.5 - nC
td(on) Turn-on Delay Time2VDS=-10V - 26 - ns
trRise Time ID=-9.5A - 500 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-4.5V - 70 - ns
tfFall Time RD=1.05Ω- 300 - ns
Ciss Input Capacitance VGS=0V - 2158 - pF
Coss Output Capacitance VDS=-15V - 845 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -2.08 A
VSD Forward On Voltage2Tj=25℃, IS=-2.5A, VGS=0V - - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP9620GM
± 8V ±100
AP9620GM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
30
60
90
120
0246
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC-10V
-8.0V
-6.0V
VGS=-4.0V
15
20
25
30
35
40
123456
-VGS (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
I
D=-9.5A
T
C
=25
℃
℃℃
℃
0
20
40
60
80
100
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150 oC-10V
-8.0V
-6.0V
VGS=-4.0V
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized RDS(ON)
ID=-9.5A
VGS=4.5V
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP9620GM
0
0.5
1
1.5
2
2.5
3
0 30 60 90 120 150
Tc , Case Temperature ( oC)
PD (W)
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
2
4
6
8
10
25 50 75 100 125 150
Tc , Case Temperature ( oC)
-ID , Drain Current (A)
0.01
0.1
1
10
100
1000
0.1 1 10 100
-VDS (V)
-ID (A)
TC=25 oC
Single Pulse
100us
1ms
10ms
100ms
1s
10s
D
C
AP9620GM
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0.01
0.10
1.00
10.00
100.00
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-VSD (V)
-IS(A)
Tj=25oC
Tj=150 oC
100
1000
10000
1 5 9 13 17 21 25 29
-VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
0.2
0.4
0.6
0.8
1
-50 0 50 100 150
Tj, Junction Temperature ( oC)
-VGS(th) (V)
0
1
2
3
4
5
6
7
0 5 10 15 20 25 30 35 40
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-9.5A
VDS=-10V
AP9620GM
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
-4.5V QGS QGD
QG
Charge
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
-5V
D
G
S
VDS
VGS
R
G
RD
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
D
G
S
VDS
VGS
ID
I
G
-1~-3mA
