Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055 IS354, ISK620 GaAs IRED and Phototransistor Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page Circuit Features AC or Polarity Insensitive Inputs Fast Switching Speeds Built-in Reverse Polarity Input Protection High Isolation Voltage High Isolation Resistance I/O Compatible with Integrated Circuits Description The IS354 and ISK620 each consist of two Gallium Arsenide infrared emitting diodes connected in inverse parallel and coupled with Silicon phototransistor in a dual-in-line package. Surface Mount Option Available. Absolute Maximum Ratings (Ta=25C) Storage Temperature: -55C to +150C Operating Temperature: -55C to +100C Lead Soldering: 260C for 10s, 1.6mm from case Input-To-Output Isolation Voltage: 2500Vpeak, 1770Vrms Input Diode Forward DC Current: Peak Input Current: 60mA 1A Output Transistor Collector-Emitter Voltage Vceo: 55V Emitter-Collector Voltage Veco: 7V Collector Current Ic: 50mA Package Total Power Dissipation Pt: 250mW Electro-optical Characteristics (Ta=25C) INPUT PARAMETER CONDITIONS VALUE VF Input Voltage IF=10mA 1.3 V CJ Capacitance V=0, f=1MHz 60 pF Typ V(BR)CEO IF=0, IC=10mA 55 V Min V(BR)CBO Breakdown Voltage IF=0, IC=100A 70 V Min V(BR)EBO IF=0, IE=100A 7V Min IF=0, VCE=10V 100 nA Max VCE=10V, IF=10mA 50 % Min 0.4 V Max ICEO Collector Dark Current Max COUPLED IC/IF Current Transfer Ratio VCE(SAT) Saturation Voltage Collector to Emitter ICEO=0.5mA, IF=10mA RIO Current Transfer Ratio Symmetry ICEO/ICEO (VCE=10V,IF=10mA) 0.33 Min Isolation Resistance Input-to-Output VIO=500Vdc Gohm 100 Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website. Visit File Lists to confirm old printouts are up-to-date. Contents