SDT12N Semiconductor TVS Diode Features * * * * Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) Small package for use in portable electronics Low operating and clamping voltage Protects five I/O lines Applications * Cell phone Handsets and Accessories * Microprocessor based equipment * Notebooks, Desktops and Servers Ordering Information Type NO. Marking Package Code T12 SOT-26 SDT12N Outline Dimensions unit : mm 2.80 BSC 5 2 4 3 0.150.04 1.100.1 0~0.1 0.4 Min. KSD-A001-000 4 5 6 3 2 1 2.90 BSC 1 0.4 Typ 6 1.90 BSC 1.60 BSC PIN Connections 1. Cathode 2. Anode 3. Cathode 4. Cathode 5. Cathode 6. Cathode 1 SDT12N Absolute maximum ratings Characteristic Ta=25C Symbol Ratings Unit Peak pulse power ( tp = 8/20 ) PPK 300 W Peak pulse current (tp = 8/20 ) IPP 24 A Peak forward voltage(IF=1A, tp = 8/20 ) VFP 1.5 V Lead soldering temperature TL 260 (10sec. ) C Operating temperature TJ -55 ~ 125 C Tstg -55 ~ 150 C Storage temperature Ta=25C Electrical Characteristics Characteristic Reverse stand-off voltage Reverse breakdown voltage Symbol Test Condition Min. Typ. Max. VRWM VBR 12 It=1mA 13.3 Unit V V Reverse leakage current IR VRWM=12V , T=25 1 Clamping voltage VC IPP=5A, tp=8/20 19 V Clamping voltage VC IPP=15A, tp=8/20 23 V Junction capacitance CJ Between I/O pins and Gnd VR=0V, f=1MHz 150 pF KSD-A001-000 135 2 SDT12N Electrical Characteristics Curves Fig. 1 None-repetitive peak pulse power vs pulse time Fig. 2 Power derating curve Fig. 4 Clamping voltage vs peak pulse current Fig. 3 Pulse Waveform Fig. 5 Forward voltage vs forward currnet KSD-A001-000 3