KSD-A001-000 1
SDT12N
TVS Diode
Features
• Tr ansient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact )
• Small package for use in portabl e electronics
• Low oper ating and clamping voltage
• Protects five I/O lines
Applications
• Cell phone Handsets and Accessories
• Microprocessor based equipment
• Notebooks, Desktops and Servers
Ordering Information
Type NO. Marking Package Code
SDT12N T12 SOT-26
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne ctions
1. Cathode
2. Anode
3. Cathode
4. Cathode
5. Cathode
6. Cathode
4 5 6
3 2 1
0.4 Min.
6 1
5 2
4 3
0.4 Typ
2.80 BSC
1.60 BSC
0~0.1
1.10±0.1
1.90 BSC
2.90 BSC
0.15±0.04
KSD-A001-000 2
SDT12N
Absolute maximum ratings Ta=25°C
Characteristic Symbol Ratings Unit
Peak pulse pow er ( tp = 8/20 ㎲ ) PPK 300 W
Peak pulse cu rrent (tp = 8/20 ㎲ ) IPP 24 A
P eak forw ard voltage(IF=1A, tp = 8/20 ㎲) VFP 1.5 V
Lead soldering temper ature TL 260 (10sec. ) °C
Operating temperature TJ -55 ~ 125 °C
Storage temperature Tstg -55 ~ 150 °C
Electrical Characteristics Ta=25°
°°
°C
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Reverse stand-off voltage VRWM 12 V
R everse breakdow n voltage VBR I
t=1mA 13.3 V
R everse leakage current IR VRWM=12V , T =25℃ 1
㎂
Clamping voltage VC IPP=5A, tp=8/20 ㎲ 19 V
Clamping voltage VC IPP=15A, tp=8/20 ㎲ 23 V
Junction capacitance CJ Between I /O pins and Gn d
VR=0V, f=1MHz 135 150 pF
KSD-A001-000 3
SDT12N
Electrical Characteristics Curves
Fig. 1 None-repetitive peak pulse power vs pulse time Fig. 2 Power derating curve
Fig. 3 Pulse Waveform
Fig. 5 Forward voltage vs forward currnet
Fig. 4 Clamping voltage vs peak pulse current
