PRELIMINARY
Designer's Data Sheet
SOLID STATE DEVICES, INC.
14830 Valley V iew Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
FEATURES:
200 mAMP
75 VOLTS
5 nsec
HYPER FAST
RECTIFIER
SURF ACE MOUNT
ROUND TAB
"SM"
1N4148SM
Maximum Ratings
75
2 Amps
200 mAmpsIo
IFSM
Volts
SYMBOL UNITSVALUE
VRRM
VRWM
VR
R2JE 0.35
Peak Repetitive Reverse and
DC Blocking Voltage
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25oC)
Maximum Thermal Resistance
Junction to End T ab
A verage Rectified Forward Curr ent
(Resistive Load, 60Hz, Sine Wave, TA = 25 oC
oC/mW
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0061A
• Hyper Fast Recovery: 5 nsec maximum
• Subminiature Surface Mount Package
• Round T ab Mounting (Square Tabs A vailable)
• Hermetically Sealed
• Planar Passivated Chip
• For High Efficiency Applications
• TX, TXV, and Space Level Screening A vailable
oC-65 TO +200TOP & TSTG
Operating and Storage Temperature
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley V iew Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
:A
Reverse Leakage Current
(TA = 150oC, 300 :s minimum Pulse) 35
75
IR3
IR4
pF2.8CJ
Junction Capacitance
(VR = 1.5VDC, TA = 25oC, f = 1 MHz)
Reverse Leakage Current
(TA = 25oC, 300 :s minimum Pulse) IR1
IR2 nA
CASE OUTLINE:
ROUND T AB "SM"
Electrical Characteristics SYMBOL UNITSMAXIMUM
VF1
VF2
0.8
1.2
Instantaneous Forward Voltage Drop
(TA = 25oC, 300 - 500:s Pulse) VDC
25
500
1N4148SM
VF3
VF4
0.8
1.3
Instantaneous Forward Voltage Drop
(300 - 500:s Pulse) VDC
IF = 10mA
IF = 100mA
IF = 10mA, TA = 150oC
IF = 100mA, TA = -55oC
nsec5tRR
Reverse Recovery Time
(IF = 10 mA, IR = 10 mA, IRR = 1 mA, TA = 25oC)
DIMENSIONS
DIM MIN. MAX.
A .130" .146"
B .056" .064"
C .010" .022"
VR = 20V
VR = 75V
VR = 20V
VR = 75V
2x C
iB
A
