BCW 31, BCW 32, BCW 33 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN Power dissipation - Verlustleistung 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.9 Dimensions / Mae in mm 1=B 2=E 3=C NPN SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCW 31, BCW 32, BCW 33 Collector-Emitter-voltage B open VCE0 32 V Collector-Base-voltage E open VCB0 32 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (DC) IC 100 mA Peak Collector current - Kollektor-Spitzenstrom ICM 200 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 32 V ICB0 - - 100 nA IE = 0, VCB = 32 V, Tj = 100/C ICB0 - - 10 :A IEB0 - - 100 nA Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V 2 Collector saturation volt. - Kollektor-Sattigungsspg. ) 1 IC = 10 mA, IB = 0.5 mA VCEsat - 120 mV 250 mV IC = 50 mA, IB = 5 mA VCEsat - 210 mV - ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 36 01.11.2003 General Purpose Transistors BCW 31, BCW 32, BCW 33 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 0.5 mA VBEsat - 750 mV - IC = 50 mA, IB = 2.5 mA VBEsat - 850 mV - DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA BCW 31 hFE - 190 - BCW 32 hFE - 330 - BCW 33 hFE - 600 - BCW 31 hFE 110 - 220 BCW 32 hFE 200 - 450 hFE 420 - 800 VBEon 550 mV - 700 mV fT 100 MHz - - CCB0 - 2.5 pF - F - - 10 dB BCW 33 1 Base-Emitter voltage - Basis-Emitter-Spannung ) VCE = 5 V, IC = 2 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung BCW 31 = D1 420 K/W 2) RthA BCW 29, BCW 30 BCW 32 = D2 BCW 33 = D3 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 37