1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
36 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCW 31, BCW 32, BCW 33 General Purpose Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCW 31, BCW 32, BCW 33
Collector-Emitter-voltage B open VCE0 32 V
Collector-Base-voltage E open VCB0 32 V
Emitter-Base-voltage C open VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (DC) IC100 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 32 V ICB0 – – 100 nA
IE = 0, VCB = 32 V, Tj = 100/CI
CB0 – – 10 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V IEB0 – – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 10 mA, IB = 0.5 mA VCEsat – 120 mV 250 mV
IC = 50 mA, IB = 5 mA VCEsat – 210 mV –
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
37
01.11.2003
General Purpose Transistors BCW 31, BCW 32, BCW 33
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA VBEsat – 750 mV –
IC = 50 mA, IB = 2.5 mA VBEsat – 850 mV –
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 5 V, IC = 10 :A
BCW 31 hFE – 190 –
BCW 32 hFE – 330 –
BCW 33 hFE – 600 –
VCE = 5 V, IC = 2 mA
BCW 31 hFE 110 – 220
BCW 32 hFE 200 – 450
BCW 33 hFE 420 – 800
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA VBEon 550 mV – 700 mV
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT100 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 2.5 pF –
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz F – – 10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BCW 29, BCW 30
Marking – Stempelung BCW 31 = D1 BCW 32 = D2 BCW 33 = D3
