IL66-4X009 - Vishay Siliconix

VISHAY

IL66/ ILD66/ ILQ66

Document Number 83638

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Single Channel

Dual Channel

Quad Channel

i179014

Pb-free

Optocoupler, Photodarlington Output, With Internal Rbe (Single,

Dual, Quad Channel)

Features

• Internal RBE for High Stability

• Four Available CTR Categories per Package Type

•BV

CEO > 60 V

• Standard DIP Packages

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,

Double Protection

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

Available with Option 1

Description

IL66, ILD66, and ILQ66 are optically coupled isolators

employing Gallium Arsenide infrared emitters and sil-

icon photodarlington detectors. Switching can be

accomplished while maintaining a high degree of iso-

lation between driving and load circuits, with no

crosstalk between channels.

Order Information

For additional information on the available options refer to

Option Information.

Part Remarks

IL66-1 CTR ≥ 100 %, DIP-6

IL66-2 CTR ≥ 300 %, DIP-6

IL66-3 CTR ≥ 400 %, DIP-6

IL66-4 CTR ≥ 500 %, DIP-6

ILD66-1 CTR ≥ 100 %, DIP-8

ILD66-2 CTR ≥ 300 %, DIP-8

ILD66-3 CTR ≥ 400 %, DIP-8

ILD66-4 CTR ≥ 500 %, DIP-8

ILQ66-1 CTR ≥ 100 %, DIP-16

ILQ66-2 CTR ≥ 300 %, DIP-16

ILQ66-3 CTR ≥ 400 %, DIP-16

ILQ66-4 CTR ≥ 500 %, DIP-16

IL66-4X009 CTR ≥ 500 %, SMD-8 (option 9)

ILD66-2X007 CTR ≥ 300 %, SMD-8 (option 7)

ILD66-3X009 CTR ≥ 400 %, SMD-8 (option 9)

ILD66-4X009 CTR ≥ 500 %, SMD-8 (option 9)

ILQ66-4X007 CTR ≥ 500 %, SMD-16 (option 7)

ILQ66-4X009 CTR ≥ 500 %, SMD-16 (option 9)

Part Remarks

www.vishay.com

Document Number 83638

Rev. 1.5, 26-Oct-04

VISHAY

IL66/ ILD66/ ILQ66

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Each Channel

Output

Coupler

Parameter Test condition Symbol Value Unit

Peak reverse voltage VRM 6.0 V

Forward continuous current IF60 mA

Power dissipation Pdiss 100 mW

Derate linearly from 25 °C 1.33 mW/°C

Parameter Test condition Symbol Value Unit

Power dissipation Pdiss 150 mW

Derate linearly from 25°C 2.0 mW/°C

Parameter Test condition Part Symbol Value Unit

Isolation test voltage t = 1.0 sec. VISO 5300 VRMS

Total package power dissipation IL66 Ptot 250 mW

ILD66 Ptot 400 mW

ILQ66 Ptot 500 mW

Derate linearly from 25 °C IL66 3.3 mW/°C

ILD66 5.33 mW/°C

ILQ66 6.67 mW/°C

Creepage ≥ 7.0 min

Clearance ≥ 7.0 min

Comparative tracking index 175

Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω

VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω

Storage temperature Tstg - 55 to + 125 °C

Operating temperature Tamb - 55 to + 100 °C

Lead soldering time at 260 °C 10 sec.

VISHAY

IL66/ ILD66/ ILQ66

Document Number 83638

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

GaAs Emitter

Output

Coupler

Current Transfer Ratio

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage IF = 20 mA VF1.25 1.5 V

Reverse current VR = 6.0 V IR0.1 10 µA

Capacitance VR = 0 V CO25 pF

Parameter Test condition Symbol Min Ty p. Max Unit

Collector-emitter breakdown

voltage

IC = 1.0 mA, IF = 0 BVCEO 60 V

Collector-base breakdown

voltage (IL66)

IC = 10 µABV

CBO 60 V

Collector-emitter leakage

current

VCE = 50 V, IF = 0 ICEO 1.0 100 nA

Capacitance, collector-emitter VCE = 10 V 3.4 pF

Parameter Test condition Symbol Min Ty p. Max Unit

Saturation voltage, collector-

emitter

IC = 10 mA, IF = 10 mA VCEsat 0.9 1.0 V

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer Ratio IF = 2.0 mA, VCE = 10 V IL(D,Q)66-1 CTR 100 400 %

IL(D,Q)66-2 CTR 300 500 %

IF = 0.7 mA, VCE = 10 V IL(D,Q)66-3 CTR 400 500 %

IF = 2.0 mA, VCE = 5.0 V IL(D,Q)66-4 CTR 500 750 %

www.vishay.com

Document Number 83638

Rev. 1.5, 26-Oct-04

VISHAY

IL66/ ILD66/ ILQ66

Vishay Semiconductors

Switching Characteristics

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter Test condition Symbol Min Typ. Max Unit

Rise time -1, -2, -4 VCC = 10 V tr200 µs

Fall time -1, -2, -4 IF = 2.0 mA, RL = 100 Ωtf200 µs

Rise time -3 IF = 0.7 mA tr200 µs

Fall time -3 VCC = 10 V, RL = 100 Ωtf200 µs

Figure 1. Forward Voltage vs. Forward Current

Figure 2. Normalized Non-saturated and Saturated CTRCE vs.

LED Current

iil66_01

100101

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

IF- Forward Current - mA

VF- Forward Voltage - V

TA= -55°C

TA=100°C

TA= 25°C

iil66_02

100

101.1

2.0

1.5

1.0

0.5

0.0

IF- LED Current - mA

NCTRce - Normalized CTRce

Normalized to:

VCE =5V

IF=2mA VCE =5V

VCE =1V

Figure 3. Normalized Non-saturated and Saturated CTRCE vs.

LED Current

Figure 4. Non-Saturated and Saturated Collector Emitter Current

vs. LED Current

iil66_03

0.0

0.2

0.4

0.6

0.8

1.0

1.2

.1 100 1000

IF - LED Current - mA

NCTRce - Normalized CTRce

Normalized to:

VCE =5V

IF=10mA

110

VCE =1V

VCE =5V

iil66_04

ICE - Collector-emitter

current - mA

.1 10 100

10000

1000

100

.01

.001

IF- LED Current - mA

VCE =1V

VCE =5V

VISHAY

IL66/ ILD66/ ILQ66

Document Number 83638

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Figure 5. Collector-Base Photocurrent vs. LED Current

Figure 6. Collector-Emitter Current vs.LED Current

Figure 7. Non-Saturated and Saturated HFE vs. LED Current

iil66_05

.1 100

IF - LED Current - mA

Icb - Photocurrent - µa

100

1000

110

iil66_06

.1 10 100 1000

10000

1000

100

.01

.001

VCE =1V

VCE =5V

ICE -Collector-emitter

current mA

IB- Base current - µs

iil66_07

.1 100 1000

25000

20000

15000

10000

5000

IB- Base Current - µA

HFE - Forward Gain

VCE=5V

VCE=1V

110

Figure 8. High to low Propagation Delay vs. Collector Load

Resistance and LED Current

Figure 9. Low to High Propagation Delay vs. Collector Load

Resistance and LED Current

Figure 10. Switching Waveform

iil66_08

0 5 10 15 20

220 Ω

10 KΩ

IF - LED Current - mA

Vcc = 5 V

Vth = 1.5 V

tpHL - High/Low Propagation

Delay - µs

iil66_09

10 15 20

100

125

150

220 KΩ

2KΩ

10 KΩ

IF - LED Current - mA

tpLH - Low/High Propagation

Delay - µs

Vcc = 5 V

Vth = 1.5 V

iil66_10

tStF

tPHL

tPLH

VTH=1.5 V

www.vishay.com

Document Number 83638

Rev. 1.5, 26-Oct-04

VISHAY

IL66/ ILD66/ ILQ66

Vishay Semiconductors

Package Dimensions in mm

iil66_11

VCC=10 V

F=10 KHz,

DF=50%

Figure 11. Switching Schematic

14770

VISHAY

IL66/ ILD66/ ILQ66

Document Number 83638

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Package Dimensions in Inches (mm)

i178006

pin one ID

.255 (6.48)

.268 (6.81)

.379 (9.63)

.390 (9.91)

.030 (0.76)

.045 (1.14)

4° typ.

.100 (2.54) typ.

10°

3°–9°

.300 (7.62)

typ.

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30)

.150 (3.81)

.020 (.51 )

.035 (.89 )

.230(5.84)

.250(6.35)

4321

.031 (0.79)

.050 (1.27)

5678

ISO Method A

.255 (6.48)

.265 (6.81)

.779 (19.77 )

.790 (20.07)

.030 (.76)

.045 (1.14)

4°

.100 (2.54)typ.

10°

typ.

3°–9°

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30)

pin one ID

.130 (3.30)

.150 (3.81)

.020(.51)

.035 (.89)

87654321

910111213141516

.031(.79)

.300 (7.62)

typ.

.230 (5.84)

.250 (6.35)

.050 (1.27)

i178007

ISO Method A

www.vishay.com

Document Number 83638

Rev. 1.5, 26-Oct-04

VISHAY

IL66/ ILD66/ ILQ66

Vishay Semiconductors

.315 (8.0)

MIN.

.300 (7.62)

TYP.

.180 (4.6)

.160 (4.1)

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.028 (0.7)

MIN.

Option 7

18494

min.

.315 (8.00)

.020 (.51)

.040 (1.02)

.300 (7.62)

ref.

.375 (9.53)

.395 (10.03)

.012 (.30) typ.

.0040 (.102)

.0098 (.249)

15° max.

Option 9

VISHAY

IL66/ ILD66/ ILQ66

Document Number 83638

Rev. 1.5, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423