VCOS & PLOs - SMT
11
11 - 2
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC358MS8G / 358MS8GE
MMIC VCO w/ BUFFER
AMPLIFIER, 5.8 - 6.8 GHz
v04.0607
General Description
Features
Functional Diagram
The HMC358MS8G & HMC358MS8GE are GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
VCOs. The HMC358MS8G & HMC358MS8GE inte-
grate resonators, negative resistance devices, varac-
tor diodes, and buffer ampli ers. The VCO’s phase
noise performance is excellent over temperature,
shock, and process due to the oscillator’s monolithic
structure. Power output is 11 dBm typical from a 3V
supply voltage. The voltage controlled oscillator is
packaged in a low cost, surface mount 8 lead MSOP
package with an exposed base for improved RF and
thermal performance.
Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm2 MSOP8G SMT Package
Typical Applications
Low noise MMIC VCO w/Buffer Ampli er
for C-Band applications such as:
• UNII & Pt. to Pt. Radios
• 802.11a & HiperLAN WLAN
• VSAT Radios
Electrical Speci cations, TA = +25° C, Vcc = +3V
Parameter Min. Typ. Max. Units
Frequency Range 5.8 - 6.8 GHz
Power Output 811 dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -110 dBc/Hz
Tune Voltage (Vtune) 0 10 V
Supply Current (Icc) 100 mA
Tune Port Leakage Current (Vtune= 10V) 10 μA
Output Return Loss 9dB
Harmonics
2nd
3rd
-10
-20
dB
dB
Pulling (into a 2.0:1 VSWR) 10 MHz pp
Pushing @ Vtune= +3V 150 MHz/V
Frequency Drift Rate 0.8 MHz/°C