UPS120Ee3
1.0 A Schottk
y
Barrier Rectifier
DESCRIPTION
The Microsemi UPS120Ee3 Powermite® Schottky rectifier is RoHS
compliant and offers low leakage current and optimized forward voltage
characteristics with reverse blocking capabilities up to 20 Volt. They are
ideal for surface mount applications that operate at high frequencies.
In addition to its size advantages, Powermite® package features include a
full metallic bottom that eliminates possibility of solder flux entrapment
during assembly, and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom). Its innovative design makes this
device ideal for use with automatic insertion equipment.
IMPORTANT: For the most current data, consult MICROSEMI’ s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 V
RMS Reverse Voltage V R (RMS) 14 V
Average Rectified Output Current (at rated
VR, TC =135ºC) Io 1.0 A
Peak Repetitive Forward Current (at rated VR,
square wave, 100kHz, TC=135ºC) IFRM 2.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine wave IFSM 50 A
Voltage Rate of Change (rated VR, TJ =25ºC) dv/dt 10,000 V/µs
Storage Temperature TSTG -55 to +150 ºC
Junction Temperature TJ -55 to +125 ºC
DO-216
See further details and dimensions on last page
THERMAL CHARACTERISTIC S
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to-case (bottom) RθJC 15 ºC/ Watt
Junction-to-ambient (1) RθJA 240 ºC/ Watt
(1) When mounted on FR-4 PC board using 1 oz copper with recommended mi nimum foot print
KEY FEATURES
Low thermal resistance DO-216AA package
RoHS Compliant with e3 suffix part number
Guard-ring-die construction for transient
protection
Efficient heat path with Integral locking
bottom metal tab
Low leakage current
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX, or
MV prefixes respectively to part numbers.
For example, designate MXUPS120Ee3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power Supplies.
Silicon Schottky (hot carrier) rectifier for
minimal reverse voltage recovery
Elimination of reverse-recovery oscillations
to reduce need for EMI filtering
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Small 8.45 mm2 foot print
(See mounting pad details next page)
MECHANICAL & PACKA G I N G
• CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
• FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
• POLARITY: See figure (left)
• MARKING: 20E•
• WEIGHT: 0.016 grams (approx.)
• Package dimension on last page
• Tape & Reel option: 12 mm tape per
Standard EIA-481-B, 3000 on 7 inch reel
and 12,000 on 13” reel
WWW.Microsemi .COM U
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Copyright © 2007
6-26-2007 Rev C
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UPS120Ee3
1.0 A Schottk
y
Barrier Rectifier
Parameter Symbol Conditions TJ = 25ºC TJ =100ºC Units
Maximum Forward Voltage (Note 1)
See Figure 2 VF
IF = 0.1 A
IF = 1.0 A
IF = 3.0 A
0.455
0.530
0.595
0.360
0.455
0.540
V
V
V
Maximum Instantaneous Reverse
Current (Note 1)
IR VR = 20 V
VR = 10 V
VR = 5 V
10
1.0
0.5
1600
500
300
µA
µA
µA
WWW.Microsemi .COM
Note: 1 Short duration test pulse used to minimize self – heating effect.
PACKAGE & MOUNTING PAD DIMENSIONS
DO-216 Package (All dimensions +/-.005 inches) MOUNTING PAD in inches
U
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Microsemi
Copyright © 2007
6-26-2007 Rev C
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