UPS120Ee3 1.0 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION The Microsemi UPS120Ee3 Powermite Schottky rectifier is RoHS compliant and offers low leakage current and optimized forward voltage characteristics with reverse blocking capabilities up to 20 Volt. They are ideal for surface mount applications that operate at high frequencies. In addition to its size advantages, Powermite(R) package features include a full metallic bottom that eliminates possibility of solder flux entrapment during assembly, and a unique locking tab acts as an efficient heat path from die to mounting plane for external heat sinking with very low thermal resistance junction to case (bottom). Its innovative design makes this device ideal for use with automatic insertion equipment. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Low thermal resistance DO-216AA package RoHS Compliant with e3 suffix part number Guard-ring-die construction for transient protection Efficient heat path with Integral locking bottom metal tab Low leakage current Full metallic bottom eliminates flux entrapment Compatible with automatic insertion Low profile-maximum height of 1mm Options for screening in accordance with MIL-PRF-19500 for JAN, JANTX, and JANTXV are available by adding MQ, MX, or MV prefixes respectively to part numbers. For example, designate MXUPS120Ee3 for a JANTX (consult factory for Tin-Lead plating). Optional 100% avionics screening available by adding MA prefix for 100% temperature cycle, thermal impedance and 24 hours HTRB (consult factory for Tin-Lead plating) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 V RMS Reverse Voltage Average Rectified Output Current (at rated VR, TC =135C) Peak Repetitive Forward Current (at rated VR, square wave, 100kHz, TC=135C) Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Voltage Rate of Change (rated VR, TJ =25C) V R (RMS) 14 V Io 1.0 A IFRM 2.0 A IFSM 50 A dv/dt 10,000 V/s Storage Temperature TSTG -55 to +150 C MECHANICAL & PACKAGING Junction Temperature TJ -55 to +125 C * CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 * FINISH: Annealed matte-Tin plating over copper and readily solderable per MILSTD-750 method 2026 (consult factory for Tin-Lead plating) * POLARITY: See figure (left) * MARKING: 20E* * WEIGHT: 0.016 grams (approx.) * Package dimension on last page * Tape & Reel option: 12 mm tape per Standard EIA-481-B, 3000 on 7 inch reel and 12,000 on 13" reel THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to-case (bottom) Junction-to-ambient (1) RJC RJA 15 240 C/ Watt C/ Watt (1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print APPLICATIONS/BENEFITS Switching and Regulating Power Supplies. Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Reduces reverse recovery loss with low IRM 2 Small 8.45 mm foot print (See mounting pad details next page) See further details and dimensions on last page Copyright (c) 2007 6-26-2007 Rev C Microsemi Page 1 UPS120Ee3 DO-216 WWW . Microsemi .C OM (R) UPS120Ee3 1.0 A Schottky Barrier Rectifier Parameter Symbol Maximum Instantaneous Reverse Current (Note 1) VF IR IF = 0.1 A IF = 1.0 A IF = 3.0 A VR = 20 V VR = 10 V VR = 5 V TJ = 25C TJ =100C Units 0.455 0.530 0.595 0.360 0.455 0.540 V V V 10 1.0 0.5 1600 500 300 A A A WWW . Microsemi .C OM Maximum Forward Voltage (Note 1) See Figure 2 Conditions Note: 1 Short duration test pulse used to minimize self - heating effect. PACKAGE & MOUNTING PAD DIMENSIONS DO-216 Package (All dimensions +/-.005 inches) MOUNTING PAD in inches UPS120Ee3 Copyright (c) 2007 6-26-2007 Rev C Microsemi Page 2