Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 3 1Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1,
BC847BDW1T1,
BC848CDW1T1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
•Device Marking:
BC846BDW1T1 = 1B
BC847BDW1T1 = 1F
BC848CDW1T1 = 1L
Features
•Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector−Emitter Voltage VCEO 65 45 30 V
Collector−Base Voltage VCBO 80 50 30 V
Emitter−Base Voltage VEBO 6.0 6.0 5.0 V
Collector Current −
Continuous IC100 100 100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD380
250
3.0
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 328 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in
Device Package Shipping†
ORDERING INFORMATION
BC846BDW1T1 SOT−363
SOT−363
CASE 419B
STYLE 1
3000 Units/Reel
DIAGRAM
MARKING
BC847BDW1T1 SOT−363 3000 Units/Reel
1xm
Q1
(1)(2)
(3)
(4) (5) (6)
Q2
1
6
BC848CDW1T1 SOT−363 3000 Units/Reel
1x = Specific Device Code
x = B, F, L
m = Date Code
http://onsemi.com
BC847BDW1T1G SOT−363
(Pb−Free) 3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA) BC846
BC847
BC848
V(BR)CEO 65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage
(IC = 10 A, VEB = 0) BC846
BC847
BC848
V(BR)CES 80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(IC = 10 A) BC846
BC847
BC848
V(BR)CBO 80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(IE = 1.0 A) BC846
BC847
BC848
V(BR)EBO 6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V) BC846B, BC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B
BC848C
hFE −
−
200
420
150
270
290
520
−
−
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k,f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
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3
TYPICAL CHARACTERISTICS − BC847 & BC848
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
−55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
http://onsemi.com
4
TYPICAL CHARACTERISTICS − BC846
Figure 7. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
0.2 1.0 10 200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = 5 V
TA = 25°C
00.5 2.0 5.0 20 50 100
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
0.5 5.0 20 50 100
−55°C to 125°C
VB for VBE
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT−GAIN − BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
http://onsemi.com
5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
1.00
RESISTANCE (NORMALIZED)
0.1
0.01
0.001
10 100 1.0k 10k 100k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZJA(t) = r(t) RJA
RJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk) ≤
150°C. TJ(pk) may be calculated from the data in
Figure 13. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
1.0M
0.02
0.01
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT−363 (SC−88)
CASE 419B−02
ISSUE T
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
DIM
AMIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H−−− 0.10−−−0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
B0.2 (0.008) MM
123
A
G
S
H
C
N
J
K
654
−B−
D6 PL
SOLDERING FOOTPRINT*
mm
inches
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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BC846BDW1T1/D
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