FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using * -55 A, -35 V Fairchild Semiconductor's proprietary PowerTrench RDS(ON) = 11.6 m @ VGS = -10 V RDS(ON) = 18 m @ VGS = -4.5 V technology to deliver low Rdson and optimized Bvdss * High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. * RoHS Compliant Applications * Inverter * Power Supplies D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol T A =25 oC unless otherwise noted Parameter VDSS Drain-Source Voltage VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) VGSS Gate-Source Voltage ID Continuous Drain Current PD Power Dissipation TJ, TSTG (Note 4) Ratings Units -35 V -40 V 25 V A @TC=25C (Note 3) -55 @TA=25C (Note 1a) -13 Pulsed (Note 1a) -100 @TC=25C (Note 3) 57 @TA=25C (Note 1a) 3.1 @TA=25C (Note 1b) W 1.3 Operating and Storage Junction Temperature Range -55 to +150 C C/W Thermal Characteristics RJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6637 FDD6637 D-PAK (TO-252) 13'' 12mm 2500 units 2006 Fairchild Semiconductor Corporation FDD6637 Rev C2(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET August 2006 Symbol Parameter T A = 25C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current VDD = -35 V, ID= -11 A, L=1mH 61 mJ -14 A Off Characteristics(Note 2) IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VDS = -28 V, IGSS Gate-Body Leakage VGS = 25 V, BVDSS On Characteristics VGS = 0 V, ID = -250 A -35 V VGS = 0 V VDS = 0 V -1 A 100 nA -3 11.6 18 19 m (Note 2) VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -14 A VGS = -4.5 V, ID = -11 A VGS = -10 V, ID = -14 A, TJ=125C VDS =-5 V, ID = -14 A -1 -1.6 9.7 14.4 14.7 35 V S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VDS = -20 V, f = 1.0 MHz V GS = 0 V, f = 1.0 MHz 2370 pF 470 pF 250 pF 3.6 (Note 2) td(on) Turn-On Delay Time 18 32 ns tr Turn-On Rise Time VDD = -20 V, ID = -1 A, 10 20 ns td(off) Turn-Off Delay Time VGS = -10 V, RGEN = 6 62 100 ns tf Turn-Off Fall Time 36 58 ns Qg Total Gate Charge, VGS = -10V 45 63 nC Qg Total Gate Charge, VGS = -5V 25 35 nC Qgs Gate-Source Charge 7 nC Qgd Gate-Drain Charge 10 nC FDD6637 Rev. C2(W) VDS = - 20 V, ID = -14 A www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Electrical Characteristics Symbol Parameter T A = 25C unless otherwise noted Test Conditions Min Typ Max Units -0.8 -1.2 Drain-Source Diode Characteristics VSD trr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = -14 A IF = -14 A, (Note 2) diF/dt = 100 A/s V 28 ns 15 nC Notes: 1. RJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in 2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at T C = 25C and RDS(on) is at T J(max) and V GS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDD6637 Rev. C2(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Electrical Characteristics 100 2.4 -6.0V VGS = -3.5V -5.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -4.5V -I D, DRAIN CURRENT (A) 80 -4.0V 60 -3.5V 40 20 -3.0V 0 1 2 3 -VD S, DRAIN-SOURCE VOLTAGE (V) 1.8 -4.0V 1.6 -4.5V -5.0V 1.4 -6.0V 1.2 -8.0V -10V 1 4 0 Figure 1. On-Region Characteristics 20 40 60 -I D, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.05 1.8 ID = -14A V GS = -10V I D = -7A R DS(ON), ON-RESISTANCE (OHM) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 0.8 0 1.6 1.4 1.2 1 0.8 0.6 -50 0.04 0.03 o TA = 125 C 0.02 TA = 25o C 0.01 0 -25 0 25 50 75 100 o TJ , JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 100 VGS = 0V 80 o T A = -55 C -I S, REVERSE DRAIN CURRENT (A) VD S = -5V -I D , DRAIN CURRENT (A) 2.2 o 125 C 60 o 25 C 40 20 0 100 10 TA = 125o C 1 o 0.1 25 C 0.01 o -55 C 0.001 0.0001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDD6637 Rev. C2(W) 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Typical Characteristics 3200 I D = -14A VDS = 10V f = 1MHz VGS = 0 V 30V 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 2400 C iss 1600 C oss 800 2 C rss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 Figure 7. Gate Charge Characteristics 30 P(pk), PEAK TRANSIENT POWER (W) 100 100s 1ms 10ms 100ms 1s 100 -I D , DRAIN CURRENT (A) 10 15 20 25 VD S, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 1000 R DS(ON) LIMIT 10 10s DC 1 VGS = -10V SINGLE PULSE o R JA = 96 C/W 0.1 o T A = 25 C SINGLE PULSE R JA = 96C/W T A = 25C 80 60 40 20 0 0.01 0.01 0 0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 100 1 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 100 1000 SINGLE PULSE R JA = 96C/W T A = 25C 80 I (AS) , AVALANCHE CURRENT I(pk), PEAK TRANSIENT CURRENT (A) 5 o 100 60 40 20 0 0.01 0.1 1 10 100 t1 , TIME (sec) Figure 11. Single Pulse Maximum Peak Current FDD6637 Rev. C2(W) 1000 TJ = 25 C 10 1 0.001 0.01 0.1 1 10 tA V, TIME IN AVANCHE(ms) Figure 12. Unclamped Inductive Switching Capability www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R JA(t) = r(t) * RJA R JA = 96 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t 2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6637 Rev. C2(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Typical Characteristics L VDS BVDSS tP VG RGEN DUT VDD VDD + 0V VGS VDS IAS - tp vary tP to obtain required peak IAS IAS 0.01 tAV Figure 14. Unclamped Inductive Load Test Circuit Figure 15. Unclamped Inductive Waveforms Drain Current Regulator Same type as DUT + 10F QG 10V 50k 10V - 1F + QGD Q GS VGS VDD VG DUT Charge, (nC) Ig(REF) Figure 16. Gate Charge Test Circuit VDS RL t ON DUT VDS Pulse Width 1s Duty Cycle 0.1% Figure 18. Switching Time Test Circuit tf tr 10% 0V 90% 10% 90% V GS 0V td(OFF) 90% VDD + VGS FDD6637 Rev. C2(W) tOFF t d(ON) VGS RGEN Figure 17. Gate Charge Waveform 50% 10% 50% Pulse Width Figure 19. Switching Time Waveforms www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench MOSFET Test Circuits and Waveforms TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20