DSA80C45HB
preliminary
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA80C45HB
Backside: cathode
FAV
F
VV0.69
RRM
40
45
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C45HB
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.78
R0.7 K/
W
R
min.
40
V
RSM
V
680T = 25°C
VJ
T = °C
VJ
m
A
7.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
215
W
T = 25°C
C
RK/
W
40
45
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
0.99
T = 25°C
VJ
125
V
F0
V
0.43T = °C
VJ
175
r
F
5.1 m
Ω
V
0.69T = °C
VJ
I = A
F
V
40
0.90
I = A
F
80
I = A
F
80
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
45
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
1.38
j
unction capacitance V = V5 T = 25°Cf = 1 MHz
RVJ
n
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
600
A
45
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
45
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C45HB
preliminary
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
D
S
A
80
C
45
HB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-247AD (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
150-55
TO-247
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA80C45HB 504890Tube 30DSA80C45HBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.43
mΩ
V
0 max
R
0 max
slope resistance * 2.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA80C45HB
preliminary
S
ØPØ P1 D2
D1
E1
4
123
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
AA2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
1 2 3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
